ES2065882T3 - Metodo litografico que emplea foto-reservas termicamente estables de alta sensibilidad que forman un reticulo con enlaces de hidrogeno. - Google Patents

Metodo litografico que emplea foto-reservas termicamente estables de alta sensibilidad que forman un reticulo con enlaces de hidrogeno.

Info

Publication number
ES2065882T3
ES2065882T3 ES87108644T ES87108644T ES2065882T3 ES 2065882 T3 ES2065882 T3 ES 2065882T3 ES 87108644 T ES87108644 T ES 87108644T ES 87108644 T ES87108644 T ES 87108644T ES 2065882 T3 ES2065882 T3 ES 2065882T3
Authority
ES
Spain
Prior art keywords
deep
polymer materials
layer
approximately
reticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES87108644T
Other languages
English (en)
Inventor
William Ross Brunsvold
Dale Murray Crockatt
Ming-Fea Chow
Jean-Marie Joseph Frechet
Willard Earl Conley
George Joseph Hefferson
Hiroshi Ito
Nancy Ellen Iwamoto
Carlton Grant Willson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of ES2065882T3 publication Critical patent/ES2065882T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

LA PRESENTE INVENCION DESCRIBE MATERIALES POLIMEROS LITOGRAFICOS ESPECIALES Y METODOS PARA UTILIZAR ESTOS MATERIALES, EN LOS QUE LOS MATERIALES POLIMEROS TIENEN GRUPOS LABILES A LOS ACIDOS O FOTOLABILES PENDIENTES DE LA COLUMNA POLIMERA. LOS MATERIALES POLIMEROS SON SUFICIENTEMENTE TRANSPARENTES A LA RADIACION UV PROFUNDA PARA PERMITIR IMPRESIONAR UV PROFUNDO, SE PUEDEN UTILIZAR PARA OBTENER ESTRUCTURAS RESISTENTES QUE TIENEN ESTABILIDAD TERMICA A TEMPERATURAS SUPERIORES A 160 (GRADOS) C APROXIMADAMENTE, Y SON SUFICIENTEMENTE RESISTENTES A ENTRECRUZAMIENTO EXCESIVO CUANDO SE CALIENTAN A TEMPERATURAS ENTRE 160 Y 250 (GRADOS) C APROXIMADAMENTE, QUE PERMANECEN SOLUBLES EN REVELADORES Y LAVADORES LITOGRAFICOS COMUNES. LA PRESENTE INVENCION TAMBIEN DESCRIBE RESISTENCIAS QUE COMPRENDEN BENZOATOS DE POLIVINILO SUSTITUIDO QUE, DESPUES DE FORMAR IMAGEN, MUESTRAN INESPERADAMENTE UNA ALTA ESTABILIDAD TERMICA, EN CONDICIONES DE FLUJO PLASTICO. ESTAS RESISTENCIAS NO SE PUEDEN IMPRESIONAR UTILIZANDOUV PROFUNDO DEBIDO A QUE MUESTRAN UN ALTO GRADO DE OPACIDAD POR DEBAJO DE 280 NM; SIN EMBARGO SON UTILES COMO LA ANTERIOR, CAPA DE FORMACION DE IMAGEN EN UN PROCESO DE RESISTENCIA BICAPA EN EL QUE LA CAPA SUPERIOR ACTUA COMO UNA PANTALLA DURANTE LA EXPOSICION A UV PROFUNDO DE LA CAPA DEL FONDO.
ES87108644T 1986-07-28 1987-06-16 Metodo litografico que emplea foto-reservas termicamente estables de alta sensibilidad que forman un reticulo con enlaces de hidrogeno. Expired - Lifetime ES2065882T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89042786A 1986-07-28 1986-07-28

Publications (1)

Publication Number Publication Date
ES2065882T3 true ES2065882T3 (es) 1995-03-01

Family

ID=25396663

Family Applications (1)

Application Number Title Priority Date Filing Date
ES87108644T Expired - Lifetime ES2065882T3 (es) 1986-07-28 1987-06-16 Metodo litografico que emplea foto-reservas termicamente estables de alta sensibilidad que forman un reticulo con enlaces de hidrogeno.

Country Status (5)

Country Link
EP (1) EP0254853B1 (es)
JP (1) JPS6336240A (es)
CA (1) CA1308594C (es)
DE (1) DE3750937T2 (es)
ES (1) ES2065882T3 (es)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264908B1 (en) * 1986-10-23 1996-03-20 International Business Machines Corporation High sensitivity resists having autodecomposition temperatures greater than about 160 C
EP0319142B1 (en) * 1987-11-03 1994-04-06 Beecham Group Plc Intermediates for the preparation of anthelmintic macrolide antibiotics
DE69029104T2 (de) 1989-07-12 1997-03-20 Fuji Photo Film Co Ltd Polysiloxane und positiv arbeitende Resistmasse
US5019481A (en) * 1989-09-25 1991-05-28 International Business Machines Corporation Aqueous base developable negative resist compositions
JP2632066B2 (ja) * 1990-04-06 1997-07-16 富士写真フイルム株式会社 ポジ画像の形成方法
JPH04149445A (ja) * 1990-10-12 1992-05-22 Mitsubishi Electric Corp ポジ型感光性組成物
DE4124029A1 (de) * 1991-07-19 1993-01-21 Hoechst Ag Verfahren zur herstellung von tert.-butyloxycarbonyl-gruppen tragenden organischen verbindungen
EP0652485B1 (en) * 1993-11-08 2000-01-12 AT&T Corp. A process for fabricating a device
EP0659781A3 (de) * 1993-12-21 1995-09-27 Ciba Geigy Ag Maleinimidcopolymere, insbesonder für Photoresists.
JPH0954437A (ja) 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
JP3591672B2 (ja) 1996-02-05 2004-11-24 富士写真フイルム株式会社 ポジ型感光性組成物
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
JP3969909B2 (ja) 1999-09-27 2007-09-05 富士フイルム株式会社 ポジ型フォトレジスト組成物
EP1472576B1 (en) 2002-02-06 2013-04-24 Basf Se Sulfonate derivatives and the use therof as latent acids
US7521168B2 (en) 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP4448705B2 (ja) 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
EP1637927A1 (en) 2004-09-02 2006-03-22 Fuji Photo Film Co., Ltd. Positive resist composition and pattern forming method using the same
JP4469692B2 (ja) 2004-09-14 2010-05-26 富士フイルム株式会社 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法
JP4474256B2 (ja) 2004-09-30 2010-06-02 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP4452632B2 (ja) 2005-01-24 2010-04-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4562537B2 (ja) 2005-01-28 2010-10-13 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4439409B2 (ja) 2005-02-02 2010-03-24 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP4724465B2 (ja) 2005-05-23 2011-07-13 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP5066405B2 (ja) 2007-08-02 2012-11-07 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ用レジスト組成物及び該組成物を用いたパターン形成方法
JP5103316B2 (ja) 2007-08-03 2012-12-19 富士フイルム株式会社 新規なスルホニウム化合物を含有するポジ型レジスト組成物、該ポジ型レジスト組成物を用いたパターン形成方法及び新規なスルホニウム化合物
EP2450746A1 (en) 2007-08-10 2012-05-09 Fujifilm Corporation Positive resist composition and pattern forming method using the composition
JP5150296B2 (ja) 2008-02-13 2013-02-20 富士フイルム株式会社 電子線、ｘ線またはｅｕｖ用ポジ型レジスト組成物及びこれを用いたパターン形成方法
WO2011104127A1 (en) 2010-02-24 2011-09-01 Basf Se Latent acids and their use
JP5802369B2 (ja) 2010-07-29 2015-10-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法
JP5793389B2 (ja) * 2011-09-30 2015-10-14 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
CN107207456B (zh) 2015-02-02 2021-05-04 巴斯夫欧洲公司 潜酸及其用途

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE3485048D1 (de) * 1983-11-01 1991-10-17 Hoechst Celanese Corp Tief uv-empfindliche positive photolackzusammensetzung, lichtempfindliches element und dasselbe enthaltendes gegen hitze widerstandsfaehiges photochemisches bild.
US4524121A (en) * 1983-11-21 1985-06-18 Rohm And Haas Company Positive photoresists containing preformed polyglutarimide polymer
US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers

Also Published As

Publication number Publication date
EP0254853A3 (en) 1989-10-25
DE3750937T2 (de) 1995-07-13
DE3750937D1 (de) 1995-02-16
CA1308594C (en) 1992-10-13
EP0254853B1 (en) 1995-01-04
EP0254853A2 (en) 1988-02-03
JPS6336240A (ja) 1988-02-16

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