ES8607575A1 - Un procedimiento para la produccion de imagenes en relieve. - Google Patents

Un procedimiento para la produccion de imagenes en relieve.

Info

Publication number
ES8607575A1
ES8607575A1 ES540587A ES540587A ES8607575A1 ES 8607575 A1 ES8607575 A1 ES 8607575A1 ES 540587 A ES540587 A ES 540587A ES 540587 A ES540587 A ES 540587A ES 8607575 A1 ES8607575 A1 ES 8607575A1
Authority
ES
Spain
Prior art keywords
radiation
sensitive composition
acid
acid cleavable
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES540587A
Other languages
English (en)
Other versions
ES540587A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoechst AG
Original Assignee
Hoechst AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6228854&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES8607575(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hoechst AG filed Critical Hoechst AG
Publication of ES540587A0 publication Critical patent/ES540587A0/es
Publication of ES8607575A1 publication Critical patent/ES8607575A1/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/04—Chromates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/016—Diazonium salts or compounds
    • G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polymerisation Methods In General (AREA)
  • Steroid Compounds (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Golf Clubs (AREA)
  • Prostheses (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)

Abstract

PROCEDIMIENTO PARA LA PRODUCCION DE IMAGENES EN RELIEVE, EN PARTICULAR PARA LA PREPARACION DE COMPOSICIONES SENSIBLES A LA RADIACION. COMPRENDE LAS SIGUIENTES OPERACIONES: PRIMERA, SE PREPARA UNA CAPA REPRODUCTORA DE LA IMAGEN CONSTITUIDA POR UN POLIMERO QUE COMPRENDE UNIDADES ALQUENILFENOL COMO LIGANTE POLIMERICO, POR UN COMPUESTO QUE FORMA UN ACIDO FUERTE BAJO LA ACCION DE LA RADIACION ACTINICA, Y POR UN COMPUESTO QUE CONTIENE POR LO MENOS UN ENLACE C-O-C ESCINDIBLE POR ACIDOS; SEGUNDA, SE PREPARA EL MATERIAL DE REPRODUCCION SENSIBLE A LA RADIACION FORMADO POR UN SOPORTE Y POR LA CAPA REPRODUCTORA PREVIAMENTE PREPARADA; Y POR ULTIMO, EL MATERIAL DE REPRODUCCION SENSIBLE A LA RADIACION ES IRRADIADO BAJO UNA IMAGEN CON RADIACION ACTINICA Y A CONTINUACION SE ELIMINAN LAS REGIONES IRRADIADAS DE LA CAPA MEDIANTE UNA SOLUCION ACUOSA ALCALINA.
ES540587A 1984-02-25 1985-02-21 Un procedimiento para la produccion de imagenes en relieve. Expired ES8607575A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19843406927 DE3406927A1 (de) 1984-02-25 1984-02-25 Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen

Publications (2)

Publication Number Publication Date
ES540587A0 ES540587A0 (es) 1986-06-01
ES8607575A1 true ES8607575A1 (es) 1986-06-01

Family

ID=6228854

Family Applications (1)

Application Number Title Priority Date Filing Date
ES540587A Expired ES8607575A1 (es) 1984-02-25 1985-02-21 Un procedimiento para la produccion de imagenes en relieve.

Country Status (14)

Country Link
US (1) US4678737A (es)
EP (1) EP0153682B1 (es)
JP (1) JP2653374B2 (es)
KR (1) KR910006542B1 (es)
CN (1) CN85101459A (es)
AT (1) ATE53917T1 (es)
AU (1) AU577830B2 (es)
BR (1) BR8500785A (es)
CA (1) CA1273521A (es)
DE (2) DE3406927A1 (es)
ES (1) ES8607575A1 (es)
FI (1) FI80155C (es)
HK (1) HK76895A (es)
ZA (1) ZA851110B (es)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3582697D1 (de) * 1984-06-07 1991-06-06 Hoechst Ag Positiv arbeitende strahlungsempfindliche beschichtungsloesung.
DE3421448A1 (de) * 1984-06-08 1985-12-12 Hoechst Ag, 6230 Frankfurt Perfluoralkylgruppen aufweisende polymere, sie enthaltende reproduktionsschichten und deren verwendung fuer den wasserlosen offsetdruck
DE3442756A1 (de) * 1984-11-23 1986-05-28 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen
JPH0650392B2 (ja) * 1985-07-12 1994-06-29 富士写真フイルム株式会社 感光性平版印刷版の製造方法
DE3528929A1 (de) * 1985-08-13 1987-02-26 Hoechst Ag Strahlungsempfindliches gemisch, dieses enthaltendes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefbildern
DE3537441A1 (de) * 1985-10-22 1987-04-23 Hoechst Ag Loesemittel zum entfernen von photoresists
DE3541534A1 (de) * 1985-11-25 1987-05-27 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch
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DE3721741A1 (de) * 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
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DE3821585A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
US4927956A (en) * 1987-09-16 1990-05-22 Hoechst Celanese Corporation 3,5-disubstituted-4-acetoxystyrene and process for its production
DE3737734A1 (de) * 1987-11-06 1989-05-18 Hoechst Ag Strahlungsempfindliches gemisch
US4869994A (en) * 1988-01-25 1989-09-26 Hoechst Celanese Corp. Photoresist compositions based on hydroxystyrene copolymers
DE3812325A1 (de) * 1988-04-14 1989-10-26 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien und verfahren zur herstellung von reliefmustern und reliefbildern
DE3812326A1 (de) * 1988-04-14 1989-10-26 Basf Ag Positiv arbeitendes, strahlungsempfindliches gemisch auf basis von saeurespaltbaren und photochemisch saeurebildenden verbindungen und verfahren zur herstellung von reliefmustern und reliefbildern
DE3817011A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
DE3817009A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
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DE3820699A1 (de) * 1988-06-18 1989-12-21 Hoechst Ag Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3821584A1 (de) * 1988-06-25 1989-12-28 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
US5114827A (en) * 1988-06-28 1992-05-19 Microelectronics Center Of N.C. Photoresists resistant to oxygen plasmas
US4968582A (en) * 1988-06-28 1990-11-06 Mcnc And University Of Nc At Charlotte Photoresists resistant to oxygen plasmas
US5342727A (en) * 1988-10-21 1994-08-30 Hoechst Celanese Corp. Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
US6051659A (en) * 1992-08-20 2000-04-18 International Business Machines Corporation Highly sensitive positive photoresist composition
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DE3841437A1 (de) * 1988-12-09 1990-06-13 Basf Ag Strahlungsempfindliches gemisch
DE3907953A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
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Also Published As

Publication number Publication date
EP0153682A2 (de) 1985-09-04
HK76895A (en) 1995-05-26
DE3577484D1 (de) 1990-06-07
CN85101459A (zh) 1987-01-17
US4678737A (en) 1987-07-07
FI80155B (fi) 1989-12-29
CA1273521A (en) 1990-09-04
BR8500785A (pt) 1985-10-08
FI80155C (fi) 1990-04-10
JPS60205444A (ja) 1985-10-17
AU577830B2 (en) 1988-10-06
JP2653374B2 (ja) 1997-09-17
FI850719L (fi) 1985-08-26
EP0153682B1 (de) 1990-05-02
AU3918485A (en) 1985-09-05
KR850006232A (ko) 1985-10-02
ES540587A0 (es) 1986-06-01
ATE53917T1 (de) 1990-06-15
DE3406927A1 (de) 1985-08-29
ZA851110B (en) 1985-09-25
KR910006542B1 (ko) 1991-08-27
FI850719A0 (fi) 1985-02-21
EP0153682A3 (en) 1987-04-22

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