ES2068304T3 - Mordentado estructural quimico-humedo de silicio. - Google Patents

Mordentado estructural quimico-humedo de silicio.

Info

Publication number
ES2068304T3
ES2068304T3 ES90118718T ES90118718T ES2068304T3 ES 2068304 T3 ES2068304 T3 ES 2068304T3 ES 90118718 T ES90118718 T ES 90118718T ES 90118718 T ES90118718 T ES 90118718T ES 2068304 T3 ES2068304 T3 ES 2068304T3
Authority
ES
Spain
Prior art keywords
bitting
silicon
silicon chemical
wet structural
wet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90118718T
Other languages
English (en)
Inventor
Konstantin Dipl-Che Holdermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SolarWorld Industries Deutschland GmbH
Original Assignee
Siemens Solar GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Solar GmbH filed Critical Siemens Solar GmbH
Application granted granted Critical
Publication of ES2068304T3 publication Critical patent/ES2068304T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers

Landscapes

  • Weting (AREA)
  • Silicon Compounds (AREA)

Abstract

UN PROCEDIMIENTO PARA EL TRATAMIENTO QUIMICO HUMEDO DE LA ESTRUCTURA DE SILICIO EN EL QUE LA SUPERFICIE DEL SILICIO SE PONE EN CONTACTO CON UNA SOLUCION QUIMICA, QUE CONTIENE AGUA, UN REACTIVO BASICO, ALCOHOL Y SILICIO U OXIDO DE SILICIO DEBE PERMITIR LA FABRICACION REPRODUCIBLE DE DETERMINADAS ESTRUCTURAS SUPERFICIALES UNIDA A UN TEXTURADO COMPLETO DE LA SUPERFICIE DEL DISCO. A LA SOLUCION QUIMICA SE AGREGA OXIGENO.
ES90118718T 1990-09-28 1990-09-28 Mordentado estructural quimico-humedo de silicio. Expired - Lifetime ES2068304T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP90118718A EP0477424B1 (de) 1990-09-28 1990-09-28 Nasschemische Strukturätzung von Silizium

Publications (1)

Publication Number Publication Date
ES2068304T3 true ES2068304T3 (es) 1995-04-16

Family

ID=8204546

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90118718T Expired - Lifetime ES2068304T3 (es) 1990-09-28 1990-09-28 Mordentado estructural quimico-humedo de silicio.

Country Status (3)

Country Link
EP (1) EP0477424B1 (es)
DE (1) DE59008544D1 (es)
ES (1) ES2068304T3 (es)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207890B1 (en) * 1997-03-21 2001-03-27 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
JPH1168158A (ja) 1997-08-20 1999-03-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置
DE102008014166B3 (de) * 2008-03-14 2009-11-26 Rena Gmbh Verfahren zur Herstellung einer Siliziumoberfläche mit pyramidaler Textur
US7955989B2 (en) * 2009-09-24 2011-06-07 Rohm And Haas Electronic Materials Llc Texturing semiconductor substrates
EP2372779B9 (en) * 2010-04-01 2015-01-07 SolarWorld Industries America, Inc. Alkaline etching liquid for texturing a silicon wafer surface
KR101579320B1 (ko) * 2010-05-12 2015-12-21 엘지전자 주식회사 태양 전지
KR20120015485A (ko) 2010-08-12 2012-02-22 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
KR20120015484A (ko) 2010-08-12 2012-02-22 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
WO2013055290A1 (en) * 2011-10-14 2013-04-18 Xu Shuyan Alkaline solution for texturing monocrystalline silicon substrate
WO2013061099A1 (en) * 2011-10-27 2013-05-02 Christophoros Diakopoulos Photovoltaic panels of high productivity in energy
KR101994084B1 (ko) 2012-12-24 2019-06-28 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
CN104282796B (zh) * 2013-07-02 2016-08-31 江阴江化微电子材料股份有限公司 一种硅晶制绒液及其制备方法
DE102016105866B3 (de) * 2016-03-31 2017-07-06 Technische Universität Bergakademie Freiberg Siliziumwafer, Verfahren zum Strukturieren eines Siliziumwafers und Solarzelle
EP4014259A4 (en) * 2019-08-12 2023-06-28 Arizona Board of Regents on behalf of Arizona State University Perovskite/silicon tandem photovoltaic device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137123A (en) * 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
GB2207890B (en) * 1987-08-14 1991-05-01 Stc Plc Etching apparatus

Also Published As

Publication number Publication date
EP0477424B1 (de) 1995-02-22
DE59008544D1 (de) 1995-03-30
EP0477424A1 (de) 1992-04-01

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