ES2074586T3 - Metodo de fabricar hilos cuanticos de silicio. - Google Patents

Metodo de fabricar hilos cuanticos de silicio.

Info

Publication number
ES2074586T3
ES2074586T3 ES90917418T ES90917418T ES2074586T3 ES 2074586 T3 ES2074586 T3 ES 2074586T3 ES 90917418 T ES90917418 T ES 90917418T ES 90917418 T ES90917418 T ES 90917418T ES 2074586 T3 ES2074586 T3 ES 2074586T3
Authority
ES
Spain
Prior art keywords
manufacture
cables
coat
level
insert
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90917418T
Other languages
English (en)
Inventor
Leigh-Trevor Canham
John Michael Keen
Weng Yee Leong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=10667590&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2074586(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Application granted granted Critical
Publication of ES2074586T3 publication Critical patent/ES2074586T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H10H20/8264—Materials of the light-emitting regions comprising only Group IV materials comprising polycrystalline, amorphous or porous Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Dc Machiner (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)

Abstract

UN METODO PARA LA FABRICACION DE CABLES CUANTICOS SEMICONDUCTORES EN QUE SU UTILIZA UN PLAQUITA SEMICONDUCTORA (14) COMO EL MATERIAL INICIAL. LA PLAQUITA (14) ES DEL TIPO P DEBILMENTE DOPADA CON UNA CAPA P DELGADA MUY DOPADA DENTRO PARA QUE LA CORRIENTE FLUYA DE MANERA UNIFORME. LA PLAQUITA (14) SE ANODIZA EN ACIDO FLUORHIDRICO ACUSOSO AL 20% PARA PRODUCIR UNA CAPA (5) GRUESA EN MICRAS CON UNA POROSIDAD DEL 70% Y BUENA CRISTALINIDAD. A CONTINUACION SE GRABA LA CAPA CON ACIDO FLUORHIDRICO CONCENTRADO, LO CUAL PROPORCIONA UNA VELOCIDAD DE ATAQUE LENTA. EL ATAQUE HACE QUE AUMENTE LA POROSIDAD A UN NIVEL DEL 80% EN LA REGION O SUPERIOR. A TAL NIVEL, LOS POROS SE SUPERPONEN Y SE ESPERA QUE SE FORMEN CABLES CUANTICOS AISLADOS CON DIAMETROS MENORES O IGUALES A 3 NM. LA CAPA GRABADA PRESENTA UNA EMISION FOTOLUMINISCENTE A ENERGIAS FOTONICAS MUY POR ENCIMA DEL HUECO DE BANDA DE SILICIO (1,1 EV) Y QUE SE EXTIENDE HASTA LA REGION ROJA (1,6 - 2,0 EV) DEL ESPECTRO VISIBLE.
ES90917418T 1989-12-07 1990-12-06 Metodo de fabricar hilos cuanticos de silicio. Expired - Lifetime ES2074586T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898927709A GB8927709D0 (en) 1989-12-07 1989-12-07 Silicon quantum wires

Publications (1)

Publication Number Publication Date
ES2074586T3 true ES2074586T3 (es) 1995-09-16

Family

ID=10667590

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90917418T Expired - Lifetime ES2074586T3 (es) 1989-12-07 1990-12-06 Metodo de fabricar hilos cuanticos de silicio.

Country Status (10)

Country Link
US (4) US5348618A (es)
EP (2) EP0504170B1 (es)
JP (2) JP2611072B2 (es)
AT (1) ATE125066T1 (es)
CA (1) CA2073030C (es)
DE (1) DE69020906T2 (es)
DK (1) DK0504170T3 (es)
ES (1) ES2074586T3 (es)
GB (3) GB8927709D0 (es)
WO (1) WO1991009420A1 (es)

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US6734451B2 (en) 1993-11-02 2004-05-11 Matsushita Electric Industrial Co., Ltd. Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
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Also Published As

Publication number Publication date
WO1991009420A1 (en) 1991-06-27
US5358600A (en) 1994-10-25
JPH05502978A (ja) 1993-05-20
GB9304855D0 (en) 1993-04-28
EP0504170B1 (en) 1995-07-12
US6369405B1 (en) 2002-04-09
EP0504170A1 (en) 1992-09-23
EP0616378A2 (en) 1994-09-21
US6147359A (en) 2000-11-14
DE69020906T2 (de) 1995-12-14
GB8927709D0 (en) 1990-02-07
GB2254188B (en) 1994-07-20
DE69020906D1 (de) 1995-08-17
US5348618A (en) 1994-09-20
DK0504170T3 (da) 1995-09-04
GB2254188C (en) 1994-12-23
GB2254188A (en) 1992-09-30
JPH0774392A (ja) 1995-03-17
ATE125066T1 (de) 1995-07-15
EP0616378A3 (en) 1998-05-06
GB2266994B (en) 1994-08-03
CA2073030C (en) 1999-02-23
GB9209555D0 (en) 1992-07-01
CA2073030A1 (en) 1991-06-08
JP2611072B2 (ja) 1997-05-21
GB2266994A (en) 1993-11-17
JP2963617B2 (ja) 1999-10-18

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