ATE125066T1 - Herstellungsverfahren für einen quantumleiter. - Google Patents

Herstellungsverfahren für einen quantumleiter.

Info

Publication number
ATE125066T1
ATE125066T1 AT90917418T AT90917418T ATE125066T1 AT E125066 T1 ATE125066 T1 AT E125066T1 AT 90917418 T AT90917418 T AT 90917418T AT 90917418 T AT90917418 T AT 90917418T AT E125066 T1 ATE125066 T1 AT E125066T1
Authority
AT
Austria
Prior art keywords
layer
wafer
hydrofluoric acid
level
porosity
Prior art date
Application number
AT90917418T
Other languages
English (en)
Inventor
Leigh-Trevor Canham
John Michael Keen
Weng Yee Leong
Original Assignee
Secr Defence Brit
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=10667590&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE125066(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Secr Defence Brit filed Critical Secr Defence Brit
Application granted granted Critical
Publication of ATE125066T1 publication Critical patent/ATE125066T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H10H20/8264—Materials of the light-emitting regions comprising only Group IV materials comprising polycrystalline, amorphous or porous Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Dc Machiner (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
AT90917418T 1989-12-07 1990-12-06 Herstellungsverfahren für einen quantumleiter. ATE125066T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898927709A GB8927709D0 (en) 1989-12-07 1989-12-07 Silicon quantum wires

Publications (1)

Publication Number Publication Date
ATE125066T1 true ATE125066T1 (de) 1995-07-15

Family

ID=10667590

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90917418T ATE125066T1 (de) 1989-12-07 1990-12-06 Herstellungsverfahren für einen quantumleiter.

Country Status (10)

Country Link
US (4) US5348618A (de)
EP (2) EP0504170B1 (de)
JP (2) JP2611072B2 (de)
AT (1) ATE125066T1 (de)
CA (1) CA2073030C (de)
DE (1) DE69020906T2 (de)
DK (1) DK0504170T3 (de)
ES (1) ES2074586T3 (de)
GB (3) GB8927709D0 (de)
WO (1) WO1991009420A1 (de)

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Also Published As

Publication number Publication date
ES2074586T3 (es) 1995-09-16
GB2266994B (en) 1994-08-03
WO1991009420A1 (en) 1991-06-27
EP0616378A3 (de) 1998-05-06
CA2073030C (en) 1999-02-23
DE69020906D1 (de) 1995-08-17
JPH05502978A (ja) 1993-05-20
EP0504170B1 (de) 1995-07-12
EP0616378A2 (de) 1994-09-21
GB2254188B (en) 1994-07-20
GB2266994A (en) 1993-11-17
JP2611072B2 (ja) 1997-05-21
DE69020906T2 (de) 1995-12-14
US6147359A (en) 2000-11-14
JPH0774392A (ja) 1995-03-17
US5358600A (en) 1994-10-25
US6369405B1 (en) 2002-04-09
EP0504170A1 (de) 1992-09-23
GB9209555D0 (en) 1992-07-01
DK0504170T3 (da) 1995-09-04
US5348618A (en) 1994-09-20
GB9304855D0 (en) 1993-04-28
JP2963617B2 (ja) 1999-10-18
CA2073030A1 (en) 1991-06-08
GB2254188A (en) 1992-09-30
GB8927709D0 (en) 1990-02-07
GB2254188C (en) 1994-12-23

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