ES2074969A6 - Metodo para depositar diamante sobre un sustrato. - Google Patents
Metodo para depositar diamante sobre un sustrato.Info
- Publication number
- ES2074969A6 ES2074969A6 ES09150029A ES9150029A ES2074969A6 ES 2074969 A6 ES2074969 A6 ES 2074969A6 ES 09150029 A ES09150029 A ES 09150029A ES 9150029 A ES9150029 A ES 9150029A ES 2074969 A6 ES2074969 A6 ES 2074969A6
- Authority
- ES
- Spain
- Prior art keywords
- diamond
- halogen
- vapor deposition
- chemical vapor
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 3
- 239000010432 diamond Substances 0.000 title abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 title abstract 2
- 229910052736 halogen Inorganic materials 0.000 title abstract 2
- 150000002367 halogens Chemical class 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 5
- 238000000034 method Methods 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 239000000376 reactant Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 238000002203 pretreatment Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
METODO PARA DEPOSITAR DIAMANTE SOBRE UN SUSTRATO, EN PARTICULAR PELICULAS Y PARTICULAS DE DIAMANTE SOBRE UNA DIVERSIDAD DE SUSTRATOS, HACIENDO FLUIR UN GAS O UNA MEZCLA DE GASES CAPAZ DE APORTAR (1) CARBONO, (2) HIDROGENO Y (3) UN HALOGENO A TRAVES DE UN REACTOR (56) SOBRE EL MATERIAL DEL SUSTRATO (72). LOS GASES REACCIONANTES SE PUEDEN MEZCLAR PREVIAMENTE CON UN GAS INERTE CON EL FIN DE MANTENER LA COMPOSICION GLOBAL DE LA MEZCLA DE GASES A UN BAJO PORCENTAJE EN VOLUMEN DE CARBONO Y A UN ALTO PORCENTAJE DE HIDROGENO. NO SE REQUIERE UN TRATAMIENTO PREVIO DE LOS GASES REACCIONANTES HASTA UN ESTADO DE ALTA ENERGIA COMO ES EL CASO EN LA MAYORIA DE LOS PROCEDIMIENTOS DE LA TECNICA ANTERIOR PARA LA DEPOSICION QUIMICA EN VAPOR DE DIAMANTE. DADO QUE EL TRATAMIENTO PREVIO NO SE REQUIERE, EL PROCEDIMIENTO SE PUEDE APLICAR A SUSTRATOS DE VIRTUALMENTE CUALQUIER TAMAÑO, FORMA O CONFIGURACION DESEADOS.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/528,804 US5071677A (en) | 1990-05-24 | 1990-05-24 | Halogen-assisted chemical vapor deposition of diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2074969A6 true ES2074969A6 (es) | 1995-09-16 |
Family
ID=24107255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES09150029A Expired - Fee Related ES2074969A6 (es) | 1990-05-24 | 1991-05-16 | Metodo para depositar diamante sobre un sustrato. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5071677A (es) |
| EP (1) | EP0557281A1 (es) |
| JP (1) | JPH05506483A (es) |
| CA (1) | CA2081778A1 (es) |
| ES (1) | ES2074969A6 (es) |
| WO (1) | WO1991018128A1 (es) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0487292B1 (en) * | 1990-11-22 | 1996-02-14 | Sumitomo Electric Industries, Limited | Polycrystalline diamond tool and method for producing same |
| CA2049673A1 (en) * | 1990-11-26 | 1992-05-27 | James F. Fleischer | Cvd diamond by alternating chemical reactions |
| US5198263A (en) * | 1991-03-15 | 1993-03-30 | The United States Of America As Represented By The United States Department Of Energy | High rate chemical vapor deposition of carbon films using fluorinated gases |
| JPH04305096A (ja) * | 1991-04-01 | 1992-10-28 | Sumitomo Electric Ind Ltd | 高品質気相合成ダイヤモンドの低温形成法 |
| US5374414A (en) * | 1991-05-10 | 1994-12-20 | The United States Of America As Represented By The Secretary Of The Navy | Self-supporting diamond filaments |
| CA2072384A1 (en) * | 1991-08-29 | 1993-03-01 | Clifford L. Spiro | Carbon fluoride compositions |
| US5527747A (en) * | 1991-10-04 | 1996-06-18 | Georgia Tech Research Corporation | Rapid process for the preparation of diamond articles |
| US6592839B2 (en) * | 1991-11-25 | 2003-07-15 | The University Of Chicago | Tailoring nanocrystalline diamond film properties |
| CA2091665C (en) * | 1992-04-07 | 2003-01-07 | Peter George Tsantrizos | Process for the synthesis of fullerenes |
| US5439492A (en) * | 1992-06-11 | 1995-08-08 | General Electric Company | Fine grain diamond workpieces |
| US6500488B1 (en) * | 1992-08-04 | 2002-12-31 | Northwestern Univ. | Method of forming fluorine-bearing diamond layer on substrates, including tool substrates |
| US5300188A (en) * | 1992-11-13 | 1994-04-05 | Kobe Development Corp. | Process for making substantially smooth diamond |
| US5249554A (en) * | 1993-01-08 | 1993-10-05 | Ford Motor Company | Powertrain component with adherent film having a graded composition |
| AT399726B (de) * | 1993-08-25 | 1995-07-25 | Bertel Erminald Dr | Einrichtung zur aufbringung diamantartiger kohlenstoffschichten auf ein substrat |
| US5397396A (en) * | 1993-12-27 | 1995-03-14 | General Electric Company | Apparatus for chemical vapor deposition of diamond including thermal spreader |
| US5620754A (en) * | 1994-01-21 | 1997-04-15 | Qqc, Inc. | Method of treating and coating substrates |
| US5554415A (en) * | 1994-01-18 | 1996-09-10 | Qqc, Inc. | Substrate coating techniques, including fabricating materials on a surface of a substrate |
| US5731046A (en) * | 1994-01-18 | 1998-03-24 | Qqc, Inc. | Fabrication of diamond and diamond-like carbon coatings |
| US5628882A (en) * | 1995-02-17 | 1997-05-13 | The United States Of America As Represented By The Secretary Of The Air Force | Method for sputter deposition of a chromium, carbon and fluorine crystalline films |
| US5589231A (en) * | 1995-04-04 | 1996-12-31 | Rice University | Halogen-activated chemical vapor deposition of diamond |
| PT3078667T (pt) * | 2001-01-25 | 2018-12-28 | The United States Of America Represented By The Sec Dep Of Health And Human Services | Formulação de compostos de ácido borónico |
| US7687146B1 (en) | 2004-02-11 | 2010-03-30 | Zyvex Labs, Llc | Simple tool for positional diamond mechanosynthesis, and its method of manufacture |
| US9469918B2 (en) | 2014-01-24 | 2016-10-18 | Ii-Vi Incorporated | Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon |
| US20220127721A1 (en) * | 2020-10-23 | 2022-04-28 | Applied Materials, Inc. | Depositing Low Roughness Diamond Films |
| US12442104B2 (en) | 2023-04-20 | 2025-10-14 | Applied Materials, Inc. | Nanocrystalline diamond with amorphous interfacial layer |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2610129A (en) * | 1949-03-22 | 1952-09-09 | Union Carbide & Carbon Corp | Synthetic rutile and method of making |
| US2693421A (en) * | 1949-03-22 | 1954-11-02 | Union Carbide & Carbon Corp | Synthetic monocrystalline rutile |
| US2819887A (en) * | 1954-02-17 | 1958-01-14 | Union Carbide Corp | Liquid-gas contacting apparatus |
| SU339134A1 (ru) * | 1956-07-10 | 1980-05-12 | Институт Физической Химии | Способ наращивани граней алмаза |
| US3030187A (en) * | 1958-07-23 | 1962-04-17 | Union Carbide Corp | Synthesis of diamond |
| US3030188A (en) * | 1958-07-23 | 1962-04-17 | Union Carbide Corp | Synthesis of diamond |
| US3093507A (en) * | 1961-10-06 | 1963-06-11 | Bell Telephone Labor Inc | Process for coating with silicon dioxide |
| US3370983A (en) * | 1961-12-18 | 1968-02-27 | Gen Motors Corp | Electrothermal transducer and method of operating same |
| US3212934A (en) * | 1963-04-10 | 1965-10-19 | Gen Motors Corp | Silver oxide palladium electrode |
| US3371996A (en) * | 1964-01-20 | 1968-03-05 | Henry J. Hibshman | Diamond growth process |
| US3511715A (en) * | 1966-01-07 | 1970-05-12 | Valley Co Inc | Method and apparatus for direct conversion of thermal energy to electrical energy |
| US3527622A (en) * | 1966-10-13 | 1970-09-08 | Minnesota Mining & Mfg | Thermoelectric composition and leg formed of lead,sulfur,and tellurium |
| US3607061A (en) * | 1968-06-26 | 1971-09-21 | Univ Case Western Reserve | Manufacture of synthetic diamonds |
| US3630679A (en) * | 1968-06-26 | 1971-12-28 | Univ Case Western Reserve | Diamond growth process |
| US3661526A (en) * | 1969-06-24 | 1972-05-09 | Univ Case Western Reserve | Process for the catalytic growth of metastable crystals from the vapor phase |
| US3711595A (en) * | 1971-07-22 | 1973-01-16 | R I Patents Inc | Chemical method for producing diamonds and fluorinated diamonds |
| US3961103A (en) * | 1972-07-12 | 1976-06-01 | Space Sciences, Inc. | Film deposition |
| US4112328A (en) * | 1975-09-22 | 1978-09-05 | Gte Sylvania Incorporated | Barium magnesium fluoride phosphors and lamps and X-ray screens embodying same |
| US4006040A (en) * | 1975-12-31 | 1977-02-01 | General Electric Company | Semiconductor device manufacture |
| US4012236A (en) * | 1975-12-31 | 1977-03-15 | General Electric Company | Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation |
| US3998661A (en) * | 1975-12-31 | 1976-12-21 | General Electric Company | Uniform migration of an annular shaped molten zone through a solid body |
| US4040868A (en) * | 1976-03-09 | 1977-08-09 | General Electric Company | Semiconductor device manufacture |
| US4081293A (en) * | 1976-10-18 | 1978-03-28 | General Electric Company | Uniform thermomigration utilizing sample movement |
| JPS5825042B2 (ja) * | 1979-08-10 | 1983-05-25 | 科学技術庁無機材質研究所長 | 衝撃圧縮によるダイヤモンド粉末の合成法 |
| US4504519A (en) * | 1981-10-21 | 1985-03-12 | Rca Corporation | Diamond-like film and process for producing same |
| JPS602245B2 (ja) * | 1981-10-26 | 1985-01-21 | 科学技術庁無機材質研究所長 | 立方晶窒化ほう素の製造法 |
| US4361641A (en) * | 1981-11-10 | 1982-11-30 | University Patents, Inc. | Electrolytic surface modulation |
| US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
| JPS58121149A (ja) * | 1981-12-22 | 1983-07-19 | Fujitsu Ltd | 記録媒体 |
| JPS5930709A (ja) * | 1982-08-13 | 1984-02-18 | Toa Nenryo Kogyo Kk | 炭素膜及び/又は炭素粒子の製造方法 |
| US4675302A (en) * | 1984-06-01 | 1987-06-23 | The Perkin-Elmer Corporation | Low expansion ceramic material |
| US4587172A (en) * | 1984-06-01 | 1986-05-06 | The Perkin-Elmer Corporation | Mirror substrate of atomically substituted Na Zr2 PO12 low expansion ceramic material |
| DE3500672A1 (de) * | 1985-01-11 | 1986-07-17 | Philips Patentverwaltung | Lichtleitfaser mit fluordotierung und verfahren zu deren herstellung |
| NL8502625A (nl) * | 1985-09-26 | 1987-04-16 | Philips Nv | Optisch transmissiesysteem bevattende een stralingsbron en een meervoudig beklede monomode optische transmissievezel met een negatieve stap in het brekingsindexprofiel. |
| NZ218022A (en) * | 1985-10-22 | 1991-01-29 | Fujitsu Ltd | Compensated regulation of light output from semiconductor laser |
| DE3690606T (es) * | 1985-11-25 | 1988-08-25 | ||
| JPS62278193A (ja) * | 1986-05-26 | 1987-12-03 | Kobe Steel Ltd | 結晶性炭素の気相合成法 |
| US4829031A (en) * | 1986-08-01 | 1989-05-09 | Research Corporation | Method of preparing ceramic compositions at lower sintering temperatures |
| JPS63107898A (ja) * | 1986-10-23 | 1988-05-12 | Natl Inst For Res In Inorg Mater | プラズマを用いるダイヤモンドの合成法 |
| US4801566A (en) * | 1987-03-13 | 1989-01-31 | Pennsylvania State University | Low expansion ceramic |
| JPS63297299A (ja) * | 1987-05-28 | 1988-12-05 | Kurosaki Refract Co Ltd | ダイヤモンドの気相合成法 |
| DE3720028A1 (de) * | 1987-06-16 | 1988-12-29 | Philips Patentverwaltung | Verfahren zur herstellung von lichtleitfasern |
| JPS6461396A (en) * | 1987-09-01 | 1989-03-08 | Idemitsu Petrochemical Co | Synthesis of diamond and installation therefor |
| JPH0649945B2 (ja) * | 1987-10-14 | 1994-06-29 | 住友電気工業株式会社 | ダイヤモンド被覆水素脆性金属及びその製造方法 |
| US4808318A (en) * | 1988-04-25 | 1989-02-28 | The United States Of America As Represented By The United States Department Of Energy | Process for cesium decontamination and immobilization |
| JPH075432B2 (ja) * | 1988-06-10 | 1995-01-25 | 住友電気工業株式会社 | ダイヤモンドの気相合成法 |
-
1990
- 1990-05-24 US US07/528,804 patent/US5071677A/en not_active Expired - Fee Related
-
1991
- 1991-05-16 CA CA002081778A patent/CA2081778A1/en not_active Abandoned
- 1991-05-16 WO PCT/US1991/003312 patent/WO1991018128A1/en not_active Ceased
- 1991-05-16 EP EP91911215A patent/EP0557281A1/en not_active Withdrawn
- 1991-05-16 ES ES09150029A patent/ES2074969A6/es not_active Expired - Fee Related
- 1991-05-16 JP JP91510615A patent/JPH05506483A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO1991018128A1 (en) | 1991-11-28 |
| JPH05506483A (ja) | 1993-09-22 |
| US5071677A (en) | 1991-12-10 |
| EP0557281A4 (en) | 1993-05-18 |
| CA2081778A1 (en) | 1991-11-25 |
| EP0557281A1 (en) | 1993-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1269061C (en) | PRODUCTION OF DIAMOND-LIKE CARBON COATINGS | |
| AU6415294A (en) | Method and apparatus for the combustion chemical vapor deposition of films and coatings | |
| TW261689B (en) | Method and apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor | |
| TW362118B (en) | Method for depositing amorphous SiNC coatings | |
| TW329535B (en) | Plasma reactor with heated source of a polymerhardening precursor material | |
| SE8702923L (sv) | Forfarande for syntes av diamanter | |
| GB2055403A (en) | Method for depositing hard wear-resistant coatings on substrates | |
| EP0099724A3 (en) | Deposition of coatings upon substrates utilising a high pressure, non-local thermal equilibrium arc plasma | |
| ES8500874A1 (es) | Un procedimiento para depositar sobre un substrato de vidriocalentado una pelicula de control solar transparente, absorbente y reflectante. | |
| AU1822288A (en) | Method of treating surfaces of substrates with the aid of a plasma | |
| GR3034501T3 (en) | Material of chemical compounds with a metal in group iv a of the periodic system, nitrogen and oxygen and process for producing it | |
| RU98119152A (ru) | Способ получения гомоэпитаксиальной алмазной тонкой пленки и устройство для его осуществления | |
| AU598611B2 (en) | Synthetic diamond by chemical vapour deposition process | |
| Weber et al. | Thin yttrium and rare earth oxide films produced by plasma enhanced CVD of novel organometallic π-complexes | |
| CA2112308A1 (en) | Method of Making White Diamond Film | |
| JPS5547379A (en) | Manufacture of boron nitride coated film by chemical vapor deposition | |
| DE3873607D1 (de) | Herstellung von polymer-metallverbindungen durch abscheidung in glimmentladungszonen. | |
| JPS6475678A (en) | Hard carbon film containing nitrogen | |
| ATE215616T1 (de) | Verfahren zum herstellen einer bc(n):h schicht | |
| JPS55154563A (en) | Manufacture of covered tool material | |
| JPS55164072A (en) | Coating | |
| ES344947A1 (es) | Metodo y aparato para producir y mantener un plasma gaseo- so. | |
| JPS60208472A (ja) | イオンプレ−テイング被膜の製法 | |
| JPS64266A (en) | Production of diamondlike carbon | |
| US3804664A (en) | Process for chemical vapor deposition of zirconium carbide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 20000201 |