ES2086909T3 - Procedimiento y circuito de perforacion de fusible en un circuito integrado. - Google Patents

Procedimiento y circuito de perforacion de fusible en un circuito integrado.

Info

Publication number
ES2086909T3
ES2086909T3 ES93402767T ES93402767T ES2086909T3 ES 2086909 T3 ES2086909 T3 ES 2086909T3 ES 93402767 T ES93402767 T ES 93402767T ES 93402767 T ES93402767 T ES 93402767T ES 2086909 T3 ES2086909 T3 ES 2086909T3
Authority
ES
Spain
Prior art keywords
fuse
drilling
circuit
voltage
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93402767T
Other languages
English (en)
Inventor
Jacek Kowalski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gemplus SA
Original Assignee
Gemplus Card International SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gemplus Card International SA filed Critical Gemplus Card International SA
Application granted granted Critical
Publication of ES2086909T3 publication Critical patent/ES2086909T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

LA INVENCION CONCIERNE A UN CIRCUITO DE PERFORACION DE FUSIBLE EN UN CIRCUITO INTEGRADO. EL FUSIBLE ES PERFORADO POR UNA TENSION DE PERFORACION (VPP) SUPERIOR A LA TENSION DE ALIMENTACION NORMAL (VCC) DEL CIRCUITO INTEGRADO. SI LA FUENTE DE TENSION DE PERFORACION SE REVELA INCAPAZ DE MANTENER UNA CORRIENTE DURADERA (ALGUNAS DECENAS DE MILISEGUNDOS) DESPUES DE LA PERFORACION, SE COMPRUEBA QUE LA FIABILIDAD DEL FUSIBLE PERFORADO NO ES BUENA. EL CIRCUITO SEGUN LA INVENCION INCLUYE UN MEDIO (T1, T3, T4) PARA APLICAR INICIALMENTE LA TENSION DE PERFORACION (VPP), Y UN MEDIO (T2) PARA UNIR EL FUSIBLE A LA FUENTE DE ALIMENTACION (VCC) INMEDIATAMENTE DESPUES DE LA PERFORACION. LA FUENTE DE ALIMENTACION DE VCC TOMA INMEDIATAMENTE EL RELEVO DE LA FUENTE DE TENSION DE PERFORACION DE VPP Y SUMINISTRA ENTONCES LA CORRIENTE NECESARIA.
ES93402767T 1992-11-18 1993-11-15 Procedimiento y circuito de perforacion de fusible en un circuito integrado. Expired - Lifetime ES2086909T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9213831A FR2698222B1 (fr) 1992-11-18 1992-11-18 Procédé et circuit de claquage de fusible dans un circuit intégré.

Publications (1)

Publication Number Publication Date
ES2086909T3 true ES2086909T3 (es) 1996-07-01

Family

ID=9435635

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93402767T Expired - Lifetime ES2086909T3 (es) 1992-11-18 1993-11-15 Procedimiento y circuito de perforacion de fusible en un circuito integrado.

Country Status (6)

Country Link
US (1) US5448187A (es)
EP (1) EP0598654B1 (es)
JP (1) JP2641151B2 (es)
DE (1) DE69301225T2 (es)
ES (1) ES2086909T3 (es)
FR (1) FR2698222B1 (es)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583819A (en) * 1995-01-27 1996-12-10 Single Chip Holdings, Inc. Apparatus and method of use of radiofrequency identification tags
US5677888A (en) * 1995-06-06 1997-10-14 Integrated Device Technology, Inc. Redundancy circuit for programmable integrated circuits
US5680360A (en) * 1995-06-06 1997-10-21 Integrated Device Technology, Inc. Circuits for improving the reliablity of antifuses in integrated circuits
US5741720A (en) * 1995-10-04 1998-04-21 Actel Corporation Method of programming an improved metal-to-metal via-type antifuse
FR2739737B1 (fr) * 1995-10-09 1997-11-21 Inside Technologies Perfectionnements aux cartes a memoire
FR2739706B1 (fr) * 1995-10-09 1997-11-21 Inside Technologies Perfectionnements aux cartes a memoire
US5631862A (en) * 1996-03-05 1997-05-20 Micron Technology, Inc. Self current limiting antifuse circuit
US5712577A (en) * 1996-04-18 1998-01-27 Electronics And Telecommunications Research Institute Anti-fuse programming circuit for user programmable integrated
US5668751A (en) * 1996-08-01 1997-09-16 Micron Technology, Inc. Antifuse programming method and apparatus
US5734617A (en) * 1996-08-01 1998-03-31 Micron Technology Corporation Shared pull-up and selection circuitry for programmable cells such as antifuse cells
US5742555A (en) 1996-08-20 1998-04-21 Micron Technology, Inc. Method of anti-fuse repair
US5838625A (en) * 1996-10-29 1998-11-17 Micron Technology, Inc. Anti-fuse programming path
US5859562A (en) * 1996-12-24 1999-01-12 Actel Corporation Programming circuit for antifuses using bipolar and SCR devices
US6104209A (en) 1998-08-27 2000-08-15 Micron Technology, Inc. Low skew differential receiver with disable feature
US5953276A (en) * 1997-12-18 1999-09-14 Micron Technology, Inc. Fully-differential amplifier
JP3670449B2 (ja) * 1997-07-09 2005-07-13 株式会社東芝 半導体装置
US6212482B1 (en) 1998-03-06 2001-04-03 Micron Technology, Inc. Circuit and method for specifying performance parameters in integrated circuits
KR100321169B1 (ko) * 1998-06-30 2002-05-13 박종섭 앤티퓨즈의프로그래밍회로
US6836000B1 (en) * 2000-03-01 2004-12-28 Micron Technology, Inc. Antifuse structure and method of use
US6327178B1 (en) 2000-07-18 2001-12-04 Micron Technology, Inc. Programmable circuit and its method of operation
DE10063686A1 (de) * 2000-12-20 2002-07-18 Infineon Technologies Ag Schaltungsanordnung zur Pegelerhöhung, insbesondere zum Ansteuern einer programmierbaren Verbindung
US6420925B1 (en) * 2001-01-09 2002-07-16 International Business Machines Corporation Programmable latch device with integrated programmable element
US7057511B2 (en) 2001-02-12 2006-06-06 Symbol Technologies, Inc. Method, system, and apparatus for communicating with a RFID tag population
KR100528480B1 (ko) * 2003-12-09 2005-11-15 삼성전자주식회사 반도체장치의 전기적 퓨즈 회로
JP4772328B2 (ja) * 2005-01-13 2011-09-14 株式会社東芝 不揮発性半導体記憶装置
JP4946260B2 (ja) * 2006-08-16 2012-06-06 富士通セミコンダクター株式会社 アンチヒューズ書込電圧発生回路を内蔵する半導体メモリ装置
JP2009277291A (ja) * 2008-05-14 2009-11-26 Toshiba Corp 不揮発性半導体記憶装置
US8310367B1 (en) 2009-05-18 2012-11-13 Empire Technology Development Llc Methods of implanting electronics in objects and objects with implanted electronics
US8050129B2 (en) * 2009-06-25 2011-11-01 Mediatek Inc. E-fuse apparatus for controlling reference voltage required for programming/reading e-fuse macro in an integrated circuit via switch device in the same integrated circuit
JP6044294B2 (ja) * 2012-11-19 2016-12-14 富士通セミコンダクター株式会社 半導体装置、半導体装置の製造方法およびヒューズ切断方法
JP7185573B2 (ja) * 2019-03-22 2022-12-07 タワー パートナーズ セミコンダクター株式会社 半導体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4122547A (en) * 1977-08-09 1978-10-24 Harris Corporation Complementary FET drivers for programmable memories
US4783763A (en) * 1985-12-23 1988-11-08 North American Philips Corp., Signetics Division Field-programmable device with buffer between programmable circuit
FR2608826B1 (fr) * 1986-12-19 1989-03-17 Eurotechnique Sa Circuit integre comportant des elements d'aiguillage vers des elements de redondance dans une memoire
US4820941A (en) * 1988-02-01 1989-04-11 Texas Instruments Incorporated Decoder driver circuit for programming high-capacitance lines
JPH0793022B2 (ja) * 1988-12-24 1995-10-09 株式会社東芝 半導体メモリ集積回路
FR2655761B1 (fr) * 1989-12-07 1992-12-31 Sgs Thomson Microelectronics Circuit de generation de tension de programmation pour memoire programmable.
FR2655762B1 (fr) * 1989-12-07 1992-01-17 Sgs Thomson Microelectronics Fusible mos a claquage d'oxyde tunnel programmable.
US5146307A (en) * 1989-12-27 1992-09-08 Texas Instruments Incorporated Fuse having a dielectric layer between sloped insulator sidewalls
US5126282A (en) * 1990-05-16 1992-06-30 Actel Corporation Methods of reducing anti-fuse resistance during programming
US5194759A (en) * 1990-05-18 1993-03-16 Actel Corporation Methods for preventing disturbance of antifuses during programming
FR2672434A1 (fr) * 1991-01-31 1992-08-07 Gemplus Card Int Fusible mos a claquage d'oxyde.
US5544111A (en) * 1991-03-14 1996-08-06 Gemplus Card International Programming process for integrated memory, particularly for a smart card
US5327024A (en) * 1992-07-02 1994-07-05 Quicklogic Corporation Field programmable antifuse device and programming method therefor
US5301159A (en) * 1993-02-05 1994-04-05 Micron Technology, Inc. Anti-fuse circuit and method wherein the read operation and programming operation are reversed

Also Published As

Publication number Publication date
JP2641151B2 (ja) 1997-08-13
FR2698222A1 (fr) 1994-05-20
DE69301225D1 (de) 1996-02-15
EP0598654B1 (fr) 1996-01-03
FR2698222B1 (fr) 1994-12-16
DE69301225T2 (de) 1996-09-05
JPH077080A (ja) 1995-01-10
EP0598654A1 (fr) 1994-05-25
US5448187A (en) 1995-09-05

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