ES2134538T3 - Dispositivo para el recubrimiento de sustratos al vacio. - Google Patents

Dispositivo para el recubrimiento de sustratos al vacio.

Info

Publication number
ES2134538T3
ES2134538T3 ES96110337T ES96110337T ES2134538T3 ES 2134538 T3 ES2134538 T3 ES 2134538T3 ES 96110337 T ES96110337 T ES 96110337T ES 96110337 T ES96110337 T ES 96110337T ES 2134538 T3 ES2134538 T3 ES 2134538T3
Authority
ES
Spain
Prior art keywords
chamber
cathodes
current source
substrate coating
vacuum substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96110337T
Other languages
English (en)
Inventor
Joachim Dr Szczyrbowski
Gotz Teschner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Balzers und Leybold Deutschland Holding AG
Original Assignee
Leybold AG
Balzers und Leybold Deutschland Holding AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold AG, Balzers und Leybold Deutschland Holding AG filed Critical Leybold AG
Application granted granted Critical
Publication of ES2134538T3 publication Critical patent/ES2134538T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Crystal (AREA)
  • Laminated Bodies (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)

Abstract

LA INVENCION SE REFIERE A UN DISPOSITIVO PARA RECUBRIMIENTO DE SUBSTRATOS (14) EN VACIO, QUE SE COMPONE DE UNA FUENTE (2) DE CORRIENTE ALTERNA, QUE ESTA UNIDA CON DOS CATODOS (6,7) DISPUESTOS EN UNA CAMARA (15) DE RECUBRIMIENTO EVACUABLE, ACTUANDO CONJUNTAMENTE DE FORMA ELECTRICA CON OBJETIVOS, DE FORMA QUE SE PRODUCE UNA PULVERIZACION EN LA DESCARGA DE GAS Y LAS PARTICULAS PULVERIZADAS SE CONDENSAN SOBRE EL SUBSTRATO (14). EN LA CAMARA (15) DE RECUBRIMIENTO ES APLICABLE UN GAS DE PROCESO, QUE SE DISPONE ENTRE LA FUENTE (2) DE CORRIENTE ALTERNA Y EL PAR (6,7) DE CATODO CON UNA RED (1), QUE ACTUA COMO FILTRO, Y SE CONFIGURA A PARTIR DE UN TRANSFORMADOR (3) Y OTRAS BOBINAS (5, 12, 13), ASI COMO CONDENSADORES (4, 8, 9, 10, 11), GARANTIZANDOSE UN PROCESO DE RECUBRIMIENTO ESTABLE.
ES96110337T 1995-10-06 1996-06-27 Dispositivo para el recubrimiento de sustratos al vacio. Expired - Lifetime ES2134538T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19537212A DE19537212A1 (de) 1994-10-06 1995-10-06 Vorrichtung zum Beschichten von Substraten im Vakuum

Publications (1)

Publication Number Publication Date
ES2134538T3 true ES2134538T3 (es) 1999-10-01

Family

ID=7774164

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96110337T Expired - Lifetime ES2134538T3 (es) 1995-10-06 1996-06-27 Dispositivo para el recubrimiento de sustratos al vacio.

Country Status (12)

Country Link
US (1) US5807470A (es)
EP (1) EP0767483B1 (es)
JP (1) JP3442589B2 (es)
KR (1) KR100235573B1 (es)
CN (1) CN1074582C (es)
AT (1) ATE183019T1 (es)
BR (1) BR9605001A (es)
CA (1) CA2184432C (es)
DE (2) DE19537212A1 (es)
ES (1) ES2134538T3 (es)
SG (1) SG40883A1 (es)
TW (1) TW413831B (es)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19605932A1 (de) * 1996-02-17 1997-08-21 Leybold Systems Gmbh Verfahren zum Ablagern einer optisch transparenten und elektrisch leitenden Schicht auf einem Substrat aus durchscheinendem Werkstoff
DE19651615C1 (de) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern
DE19651811B4 (de) * 1996-12-13 2006-08-31 Unaxis Deutschland Holding Gmbh Vorrichtung zum Belegen eines Substrats mit dünnen Schichten
DE19956733A1 (de) * 1999-11-25 2001-06-28 Fraunhofer Ges Forschung Verfahren zur Regelung von Sputterprozessen
DE10154229B4 (de) 2001-11-07 2004-08-05 Applied Films Gmbh & Co. Kg Einrichtung für die Regelung einer Plasmaimpedanz
US7298091B2 (en) * 2002-02-01 2007-11-20 The Regents Of The University Of California Matching network for RF plasma source
DE10306347A1 (de) * 2003-02-15 2004-08-26 Hüttinger Elektronik GmbH & Co. KG Leistungszufuhrregeleinheit
US6967305B2 (en) * 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
JP4658506B2 (ja) * 2004-03-31 2011-03-23 浩史 滝川 パルスアークプラズマ生成用電源回路及びパルスアークプラズマ処理装置
EP1720195B1 (de) * 2005-05-06 2012-12-12 HÜTTINGER Elektronik GmbH + Co. KG Arcunterdrückungsanordnung
EP2326151A1 (fr) * 2009-11-24 2011-05-25 AGC Glass Europe Procédé et dispositif de polarisation d'une électrode DBD
TWI745813B (zh) * 2017-06-27 2021-11-11 日商佳能安內華股份有限公司 電漿處理裝置
EP3648551B1 (en) 2017-06-27 2021-08-18 Canon Anelva Corporation Plasma treatment device
KR102257134B1 (ko) * 2017-06-27 2021-05-26 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
SG11201912566WA (en) * 2017-06-27 2020-01-30 Canon Anelva Corp Plasma processing apparatus
DE19723614T1 (de) * 2018-05-06 2021-07-15 Aes Global Holdings, Pte. Ltd. Vorrichtung, system und verfahren zur reduzierung von haarrissbildung
CN112292911A (zh) * 2018-06-26 2021-01-29 佳能安内华股份有限公司 等离子体处理装置、等离子体处理方法、程序和存储介质
CN118713230B (zh) * 2024-06-14 2025-04-29 湖南众源科技有限公司 一种供电电路、供电电路的控制方法及镀膜电源

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4887005A (en) * 1987-09-15 1989-12-12 Rough J Kirkwood H Multiple electrode plasma reactor power distribution system
JPH01268869A (ja) * 1988-04-20 1989-10-26 Fuji Photo Film Co Ltd スパッタリング装置
DE3923661A1 (de) * 1989-07-18 1991-01-24 Leybold Ag Schaltungsanordnung fuer die anpassung der impedanz einer plasmastrecke an einen hochfrequenzgenerator
DE4042287C2 (de) * 1990-12-31 1999-10-28 Leybold Ag Vorrichtung zum reaktiven Aufstäuben von elektrisch isolierendem Werkstoff
DE4106770C2 (de) * 1991-03-04 1996-10-17 Leybold Ag Verrichtung zum reaktiven Beschichten eines Substrats
US5281321A (en) * 1991-08-20 1994-01-25 Leybold Aktiengesellschaft Device for the suppression of arcs
US5240584A (en) * 1991-11-07 1993-08-31 Leybold Aktiengesellschaft Apparatus for the reactive coating of a substrate
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
DE4138794A1 (de) * 1991-11-26 1993-05-27 Leybold Ag Verfahren und vorrichtung zum beschichten eines substrats, insbesondere mit elektrisch nichtleitenden schichten
DE4237517A1 (de) * 1992-11-06 1994-05-11 Leybold Ag Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
US5512164A (en) * 1993-06-03 1996-04-30 The United States Of America As Represented By The United States Department Of Energy Method for sputtering with low frequency alternating current

Also Published As

Publication number Publication date
DE59602601D1 (de) 1999-09-09
KR100235573B1 (ko) 1999-12-15
EP0767483A1 (de) 1997-04-09
KR970023537A (ko) 1997-05-30
CA2184432A1 (en) 1997-04-07
ATE183019T1 (de) 1999-08-15
CN1155748A (zh) 1997-07-30
JPH09111449A (ja) 1997-04-28
JP3442589B2 (ja) 2003-09-02
CA2184432C (en) 2006-01-24
BR9605001A (pt) 1998-06-23
EP0767483B1 (de) 1999-08-04
TW413831B (en) 2000-12-01
DE19537212A1 (de) 1996-04-11
CN1074582C (zh) 2001-11-07
US5807470A (en) 1998-09-15
SG40883A1 (en) 1997-06-14

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