ES2146128A1 - Procedimiento de fotoenmascaramiento de poliimidas fotosensibles con compuestos organometalicos para procesos fotolitograficos en tecnologia de silicio. - Google Patents
Procedimiento de fotoenmascaramiento de poliimidas fotosensibles con compuestos organometalicos para procesos fotolitograficos en tecnologia de silicio.Info
- Publication number
- ES2146128A1 ES2146128A1 ES009500645A ES9500645A ES2146128A1 ES 2146128 A1 ES2146128 A1 ES 2146128A1 ES 009500645 A ES009500645 A ES 009500645A ES 9500645 A ES9500645 A ES 9500645A ES 2146128 A1 ES2146128 A1 ES 2146128A1
- Authority
- ES
- Spain
- Prior art keywords
- photomasking
- photosensitive
- silicon technology
- silanization
- photosensitive polyimides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 7
- 239000004642 Polyimide Substances 0.000 title abstract 3
- 238000005516 engineering process Methods 0.000 title abstract 3
- 229920001721 polyimide Polymers 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 title 1
- 238000000206 photolithography Methods 0.000 title 1
- 239000002243 precursor Substances 0.000 abstract 2
- 238000002444 silanisation Methods 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 150000002902 organometallic compounds Chemical class 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 229920005575 poly(amic acid) Polymers 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000012876 topography Methods 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Procedimiento de fotoenmascaramiento de poliimidas fotosensibles con compuestos organometálicos para procesos fotolitográficos en tecnología de silicio. Es un proceso fotolitográfico monocapa sobre topografías irregulares que se basa en la silanización superficial de los grupos metacrilato del ácido poliámico precursor de la poliimida fotosensible para que actúen como máscara ante el revelado por plasma en modo RIE, con oxígeno como gas reactivo. El proceso permite la obtención de motivos positivos o negativos, con respecto a la máscara, utilizando los mismos precursores fotosensibles ya que esto depende únicamente de la secuencia con que se realicen los pasos de exposición y silanización. Este proceso puede aplicarle a la fotodefinición de capas poliméricas de cualquier espesor. Aplicación en la encapsulación se sensores químicos, módulos multichip, tecnología microelectrónica, sectores electrónicos, óptica integrada.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES9500645A ES2146128B1 (es) | 1995-03-31 | 1995-03-31 | Procedimiento de fotoenmascaramiento de poliimidas fotosensibles con compuestos organometalicos para procesos fotolitograficos en tecnologia de silicio. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES9500645A ES2146128B1 (es) | 1995-03-31 | 1995-03-31 | Procedimiento de fotoenmascaramiento de poliimidas fotosensibles con compuestos organometalicos para procesos fotolitograficos en tecnologia de silicio. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES2146128A1 true ES2146128A1 (es) | 2000-07-16 |
| ES2146128B1 ES2146128B1 (es) | 2001-03-16 |
Family
ID=8289963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES9500645A Expired - Lifetime ES2146128B1 (es) | 1995-03-31 | 1995-03-31 | Procedimiento de fotoenmascaramiento de poliimidas fotosensibles con compuestos organometalicos para procesos fotolitograficos en tecnologia de silicio. |
Country Status (1)
| Country | Link |
|---|---|
| ES (1) | ES2146128B1 (es) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0131992A1 (en) * | 1983-07-01 | 1985-01-23 | Koninklijke Philips Electronics N.V. | Photosensitive polyamic acid derivative, method of manufacturing polyimide pattern on a substrate, and semiconductor device comprising a polyimide pattern obtained by using the said method |
| EP0176062A2 (en) * | 1984-09-27 | 1986-04-02 | Dow Corning Corporation | Silane bonding agents for high temperature applications and method therefor |
| EP0467516A1 (en) * | 1990-07-20 | 1992-01-22 | Cabot Technology Corporation | Hemostatic stent |
| EP0505161A1 (en) * | 1991-03-18 | 1992-09-23 | Shin-Etsu Chemical Co., Ltd. | Photosensitive polymer composition |
| EP0568476A2 (en) * | 1992-04-30 | 1993-11-03 | International Business Machines Corporation | Silicon-containing positive resist and method of using the same in thin film packaging technology |
| EP0642057A1 (en) * | 1993-09-03 | 1995-03-08 | Hitachi Chemical Co., Ltd. | Photosensitive resin composition |
-
1995
- 1995-03-31 ES ES9500645A patent/ES2146128B1/es not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0131992A1 (en) * | 1983-07-01 | 1985-01-23 | Koninklijke Philips Electronics N.V. | Photosensitive polyamic acid derivative, method of manufacturing polyimide pattern on a substrate, and semiconductor device comprising a polyimide pattern obtained by using the said method |
| EP0176062A2 (en) * | 1984-09-27 | 1986-04-02 | Dow Corning Corporation | Silane bonding agents for high temperature applications and method therefor |
| EP0467516A1 (en) * | 1990-07-20 | 1992-01-22 | Cabot Technology Corporation | Hemostatic stent |
| EP0505161A1 (en) * | 1991-03-18 | 1992-09-23 | Shin-Etsu Chemical Co., Ltd. | Photosensitive polymer composition |
| EP0568476A2 (en) * | 1992-04-30 | 1993-11-03 | International Business Machines Corporation | Silicon-containing positive resist and method of using the same in thin film packaging technology |
| EP0642057A1 (en) * | 1993-09-03 | 1995-03-08 | Hitachi Chemical Co., Ltd. | Photosensitive resin composition |
Non-Patent Citations (3)
| Title |
|---|
| ELLIOTT, DAVID J. "Integrated Circuit Fabrication Technology". Nueva York: Mc-Graw Hill. 1989. Paginas 64-65,382-384. * |
| OCG MICROELECTRONICS MATERIALS INC "Selectilux HTR 3. Light sensitive polyimide precursor". Febrero de 1990. * |
| WILSON, ALAN D. et al. "Surface Coatings-1". Londres: Elsevier Applied Science. 1987. Paginas 191-193. * |
Also Published As
| Publication number | Publication date |
|---|---|
| ES2146128B1 (es) | 2001-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES2629782T3 (es) | Procedimiento para transferir una nanocapa | |
| US6334960B1 (en) | Step and flash imprint lithography | |
| KR102126787B1 (ko) | 자기조직화막의 하층막 형성 조성물 | |
| TWI541599B (zh) | 具有氟系添加劑之含矽光阻下層膜形成組成物 | |
| JP5757242B2 (ja) | ケイ素化合物を用いる膜形成組成物 | |
| ATE420769T1 (de) | Verfahren zur herstellung einer microstruktur | |
| ATE405623T1 (de) | Topologischstrukturierte polymerbeschichtung | |
| DK1504113T3 (da) | Fremgangsmåde til fremstilling af polymerlag | |
| DE60239401D1 (de) | Lithographische methode zur erzeugung eines elements | |
| CN101944475A (zh) | 制造半导体器件的方法及图案形成方法 | |
| CN111438859A (zh) | 一种图案化纳米阵列模板及其制备方法和应用 | |
| TW200801801A (en) | Process for producing patterned film and photosensitive resin composition | |
| TW201716872A (zh) | 感放射線性組成物 | |
| CN107643652A (zh) | 纳米压印模板及其制作方法和应用 | |
| ES2146128A1 (es) | Procedimiento de fotoenmascaramiento de poliimidas fotosensibles con compuestos organometalicos para procesos fotolitograficos en tecnologia de silicio. | |
| RU2488910C1 (ru) | Рентгеношаблон и способ его изготовления | |
| ATE371001T1 (de) | Strukturierte trennschicht und verfahren zu deren herstellung | |
| KR101189056B1 (ko) | 마스크 없이 반응성 이온 식각만으로 쉽게 나노 패턴을 형성하는 방법 | |
| CN112219164A (zh) | 用于生产多层压印母版的方法、多层压印母版及多层压印母版的用途 | |
| CN106371289A (zh) | 鸡蛋清稀薄蛋白作为光刻胶的应用 | |
| WO2020196642A1 (ja) | 膜形成用組成物 | |
| US20050084805A1 (en) | Method for forming patterned ITO structure by using photosensitive ITO solution | |
| Zhang et al. | Fabrication of hybrid soft-nanoimprint mold in benign ambient based on thiol–ene | |
| JPS6034022A (ja) | 半導体装置の絶縁層の製造法 | |
| WO2007049494A1 (ja) | パターニングされた物質の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FC2A | Grant refused |
Effective date: 19990107 |
|
| EC2A | Search report published |
Date of ref document: 20000716 Kind code of ref document: A1 Effective date: 20000716 |