ES2187649T3 - Amplificador de laser, sistema optico que comprende el indicado amplificador y su procedimiento de realizacion. - Google Patents

Amplificador de laser, sistema optico que comprende el indicado amplificador y su procedimiento de realizacion.

Info

Publication number
ES2187649T3
ES2187649T3 ES96914497T ES96914497T ES2187649T3 ES 2187649 T3 ES2187649 T3 ES 2187649T3 ES 96914497 T ES96914497 T ES 96914497T ES 96914497 T ES96914497 T ES 96914497T ES 2187649 T3 ES2187649 T3 ES 2187649T3
Authority
ES
Spain
Prior art keywords
amplifier
well layers
laser amplifier
type
optical system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96914497T
Other languages
English (en)
Inventor
Per Granestrand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Application granted granted Critical
Publication of ES2187649T3 publication Critical patent/ES2187649T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)

Abstract

SE PRESENTA UN AMPLIFICADOR LASER, UN SISTEMA OPTICO QUE COMPRENDE EL AMPLIFICADOR LASER Y UN METODO PARA FORMAR EL AMPLIFICADOR LASER PARA OBTENER UNA AMPLIFICACION INDEPENDIENTE DE LA POLARIZACION A LO LARGO DE UNA REGION AMPLIA DE LONGITUDES DE ONDA. EL AMPLIFICADOR OPTICO COMPRENDE UNA REGION ACTIVA QUE SE FORMA SOBRE UN SUSTRATO SEMICONDUCTOR (6). LA CAPA ACTIVA HA SIDO FORMADA A TRAVES DEL CRECIMIENTO DE CAPAS DE POZO, DE CUANTO (13, 14, 15, 16) QUE SE ALTERNA CON CAPAS DE BARRERA (12). LAS CAPAS DE POZO COMPRENDEN CAPAS DE POZO DE UN PRIMER TIPO (14, 15, 16) QUE TIENEN UNA FUERZA TENSIONAL JUNTO CON O SIN CAPAS DE POZO DE UN SEGUNDO TIPO QUE TIENEN FUERZA COMPRESIVA (13). AL MENOS UNA DE LAS CAPAS DE POZO DE UN TIPO (16) SE HA HECHO CRECER HASTA UNA ANCHURA DIFERENTE Y/O CON UNA COMPOSICION DE MATERIAL, DIFERENTE QUE LAS OTRAS CAPAS DE POZO DEL MISMO TIPO (14, 15).
ES96914497T 1995-05-04 1996-05-03 Amplificador de laser, sistema optico que comprende el indicado amplificador y su procedimiento de realizacion. Expired - Lifetime ES2187649T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9501667A SE505433C2 (sv) 1995-05-04 1995-05-04 Laserförstärkare, optiskt system innefattande en sådan laserförstärkare och ett förfarande för att forma en sådan laserförstärkare

Publications (1)

Publication Number Publication Date
ES2187649T3 true ES2187649T3 (es) 2003-06-16

Family

ID=20398203

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96914497T Expired - Lifetime ES2187649T3 (es) 1995-05-04 1996-05-03 Amplificador de laser, sistema optico que comprende el indicado amplificador y su procedimiento de realizacion.

Country Status (11)

Country Link
US (1) US6014250A (es)
EP (1) EP0824773B1 (es)
JP (1) JPH11504468A (es)
KR (1) KR100425258B1 (es)
CN (1) CN1105410C (es)
AU (1) AU5783996A (es)
CA (1) CA2220093C (es)
DE (1) DE69624915T2 (es)
ES (1) ES2187649T3 (es)
SE (1) SE505433C2 (es)
WO (1) WO1996035248A1 (es)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118442A (ja) * 1996-10-07 1999-01-12 Canon Inc 光半導体デバイス、それを用いた光通信システム及び方法
JP4789320B2 (ja) * 2000-12-01 2011-10-12 富士通株式会社 半導体光増幅器
TW525306B (en) * 2001-04-19 2003-03-21 Univ Nat Taiwan Technique using multi-layer quantum well of different widths for increasing the light emitting bandwidth of semiconductor photoelectric device
US6798568B1 (en) * 2002-02-19 2004-09-28 Finisar Corporation Polarization independent semiconductor optical amplifier
TWI289961B (en) * 2003-06-20 2007-11-11 Univ Nat Taiwan Semiconductor laser to widen the tunable range of wavelength by adjusting the quantum well sequence and the method thereof
KR20050009584A (ko) * 2003-07-18 2005-01-25 삼성전자주식회사 반도체 광증폭기와 광증폭 모듈
US9106053B2 (en) * 2012-10-15 2015-08-11 Palo Alto Research Center Incorporated Distributed feedback surface emitting laser
JP2017147297A (ja) * 2016-02-16 2017-08-24 国立研究開発法人情報通信研究機構 半導体光増幅器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839899A (en) * 1988-03-09 1989-06-13 Xerox Corporation Wavelength tuning of multiple quantum well (MQW) heterostructure lasers
DE69104573T2 (de) * 1990-08-03 1995-04-20 Philips Nv Optischer Verstärker.
US5274656A (en) * 1991-06-12 1993-12-28 Sumitomo Electric Industries, Ltd. Semiconductor laser
US5406574A (en) * 1991-10-23 1995-04-11 Kabushiki Kaisha Toshiba Semiconductor laser device
JPH05145178A (ja) * 1991-11-18 1993-06-11 Furukawa Electric Co Ltd:The 歪量子井戸半導体レーザ素子

Also Published As

Publication number Publication date
WO1996035248A1 (en) 1996-11-07
KR100425258B1 (ko) 2004-07-27
SE9501667L (sv) 1996-11-05
EP0824773B1 (en) 2002-11-20
CN1188568A (zh) 1998-07-22
CN1105410C (zh) 2003-04-09
EP0824773A1 (en) 1998-02-25
CA2220093C (en) 2005-04-12
CA2220093A1 (en) 1996-11-07
KR19990008312A (ko) 1999-01-25
SE9501667D0 (sv) 1995-05-04
SE505433C2 (sv) 1997-08-25
JPH11504468A (ja) 1999-04-20
DE69624915D1 (de) 2003-01-02
AU5783996A (en) 1996-11-21
DE69624915T2 (de) 2003-08-21
US6014250A (en) 2000-01-11

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