ES2194897T3 - Procedimiento de deposicion por plasma con regulacion de temperatura del substrato. - Google Patents

Procedimiento de deposicion por plasma con regulacion de temperatura del substrato.

Info

Publication number
ES2194897T3
ES2194897T3 ES95902666T ES95902666T ES2194897T3 ES 2194897 T3 ES2194897 T3 ES 2194897T3 ES 95902666 T ES95902666 T ES 95902666T ES 95902666 T ES95902666 T ES 95902666T ES 2194897 T3 ES2194897 T3 ES 2194897T3
Authority
ES
Spain
Prior art keywords
substrate temperature
temperature regulation
plasma deposition
deposition procedure
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES95902666T
Other languages
English (en)
Inventor
Subhendu Guha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Solar Systems Corp
Original Assignee
United Solar Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Solar Systems Corp filed Critical United Solar Systems Corp
Application granted granted Critical
Publication of ES2194897T3 publication Critical patent/ES2194897T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

EN UN PROCESO DE DEPOSICION POR DESCARGA DE INCANDESCENCIA PARA LA PREPARACION DE ALEACIONES SEMICONDUCTORAS DEL GRUPO IV, HIDROGENADAS, EL SUSTRATO SE MANTIENE A UNA TEMPERATURA QUE SE CORRELACIONA POSITIVAMENTE CON LA VELOCIDAD DE DEPOSICION Y QUE ES SUFICIENTEMENTE ALTA PARA IMPARTIR UNA ENERGIA CINETICA A LA CAPA PARA ACTIVAR LA ELIMINACION DE MORFOLOGIA INDESEABLES., PERO SUFICIENTEMENTE BAJA PARA EVITAR LA DEGRADACION DE LA CAPA CAUSADA POR LA PERDIDA EXCESIVA DE HIDROGENO.
ES95902666T 1993-11-26 1994-11-21 Procedimiento de deposicion por plasma con regulacion de temperatura del substrato. Expired - Lifetime ES2194897T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/157,322 US5476798A (en) 1992-06-29 1993-11-26 Plasma deposition process with substrate temperature control

Publications (1)

Publication Number Publication Date
ES2194897T3 true ES2194897T3 (es) 2003-12-01

Family

ID=22563238

Family Applications (1)

Application Number Title Priority Date Filing Date
ES95902666T Expired - Lifetime ES2194897T3 (es) 1993-11-26 1994-11-21 Procedimiento de deposicion por plasma con regulacion de temperatura del substrato.

Country Status (5)

Country Link
US (1) US5476798A (es)
EP (1) EP0681743B1 (es)
JP (1) JP3936391B2 (es)
ES (1) ES2194897T3 (es)
WO (1) WO1995015012A1 (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6391690B2 (en) * 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US6274461B1 (en) * 1998-08-20 2001-08-14 United Solar Systems Corporation Method for depositing layers of high quality semiconductor material
DE69936906T2 (de) * 1998-10-12 2008-05-21 Kaneka Corp. Verfahren zur Herstellung einer siliziumhaltigen photoelektrischen Dünnschicht-Umwandlungsanordnung
US6468829B2 (en) 2000-05-16 2002-10-22 United Solar Systems Corporation Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates
JP4240933B2 (ja) * 2002-07-18 2009-03-18 キヤノン株式会社 積層体形成方法
US7902049B2 (en) * 2004-01-27 2011-03-08 United Solar Ovonic Llc Method for depositing high-quality microcrystalline semiconductor materials
US20100116338A1 (en) * 2008-11-07 2010-05-13 United Solar Ovinic Llc High quality semiconductor material
US20100117172A1 (en) * 2008-11-07 2010-05-13 United Solar Ovonic Llc Thin film semiconductor alloy material prepared by a vhf energized plasma deposition process
US20100116334A1 (en) * 2008-11-07 2010-05-13 United Solar Ovonic Llc Vhf energized plasma deposition process for the preparation of thin film materials

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492810A (en) * 1978-03-08 1985-01-08 Sovonics Solar Systems Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices
JPS5857757A (ja) * 1981-10-01 1983-04-06 Seiko Epson Corp 非晶質シリコン太陽電池の製造方法
US4701343A (en) * 1982-09-24 1987-10-20 Energy Conversion Devices, Inc. Method of depositing thin films using microwave energy
US4504518A (en) * 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
US4515107A (en) * 1982-11-12 1985-05-07 Sovonics Solar Systems Apparatus for the manufacture of photovoltaic devices
US4721663A (en) * 1985-08-26 1988-01-26 Energy Conversion Devices, Inc. Enhancement layer for negatively charged electrophotographic devices
US4713309A (en) * 1985-08-26 1987-12-15 Energy Conversion Devices, Inc. Enhancement layer for positively charged electrophotographic devices and method for decreasing charge fatigue through the use of said layer
US4729341A (en) * 1985-09-18 1988-03-08 Energy Conversion Devices, Inc. Method and apparatus for making electrophotographic devices
JPS62271418A (ja) * 1986-05-20 1987-11-25 Matsushita Electric Ind Co Ltd 非晶質シリコン半導体素子の製造方法
JPS62279304A (ja) * 1986-05-28 1987-12-04 Sumitomo Electric Ind Ltd 光導波層の製造方法
DE3742110C2 (de) * 1986-12-12 1996-02-22 Canon Kk Verfahren zur Bildung funktioneller aufgedampfter Filme durch ein chemisches Mikrowellen-Plasma-Aufdampfverfahren
JPH01152765A (ja) * 1987-12-10 1989-06-15 Matsushita Electric Ind Co Ltd 非晶質シリコン太陽電池の製造方法
JPH0387372A (ja) * 1988-07-22 1991-04-12 Canon Inc 堆積膜形成方法
KR910007465B1 (ko) * 1988-10-27 1991-09-26 삼성전관 주식회사 비정질 실리콘 태양전지의 제조방법
JP2846651B2 (ja) * 1989-03-31 1999-01-13 三洋電機株式会社 光起電力装置
US5194398A (en) * 1989-06-28 1993-03-16 Mitsui Toatsu Chemicals, Inc. Semiconductor film and process for its production
US5114770A (en) * 1989-06-28 1992-05-19 Canon Kabushiki Kaisha Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method
AU632241B2 (en) * 1990-09-06 1992-12-17 Mitsui Toatsu Chemicals Inc. Amorphous silicon solar cell and method for manufacturing the same
JPH04329881A (ja) * 1991-05-01 1992-11-18 Canon Inc マイクロ波プラズマｃｖｄ法による堆積膜形成装置
US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture
US5256576A (en) * 1992-02-14 1993-10-26 United Solar Systems Corporation Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer

Also Published As

Publication number Publication date
EP0681743B1 (en) 2003-03-26
US5476798A (en) 1995-12-19
EP0681743A1 (en) 1995-11-15
EP0681743A4 (en) 1997-08-13
JP3936391B2 (ja) 2007-06-27
JPH08506455A (ja) 1996-07-09
WO1995015012A1 (en) 1995-06-01

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