ES2660471T3 - Dispositivo de transistor bipolar de compuerta aislada que comprende un transistor de efecto de campo de compuerta aislado conectado en serie con un transistor de efecto de campo de ensamblaje que tiene un contacto de drenaje modificado - Google Patents

Dispositivo de transistor bipolar de compuerta aislada que comprende un transistor de efecto de campo de compuerta aislado conectado en serie con un transistor de efecto de campo de ensamblaje que tiene un contacto de drenaje modificado Download PDF

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Publication number
ES2660471T3
ES2660471T3 ES15161312.2T ES15161312T ES2660471T3 ES 2660471 T3 ES2660471 T3 ES 2660471T3 ES 15161312 T ES15161312 T ES 15161312T ES 2660471 T3 ES2660471 T3 ES 2660471T3
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Prior art keywords
field effect
transistor
effect transistor
isolated
contact region
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ES15161312.2T
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English (en)
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Klas-Håkan Eklund
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/832—Thin-film junction FETs [JFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Abstract

Un dispositivo transistor bipolar de puerta aislada en el que se conecta un primer transistor (1) de efecto de campo de puerta aislada en serie con un segundo transistor de efecto de campo, FET, (2), en el que el segundo transistor (2) de efecto de campo es un transistor de efecto de campo de unión JFET, y tiene una región (16) de contacto de drenaje modificado que está comprendido puramente de una primera área de contacto de tipo conductividad, el primer tipo de conductividad es opuesto a un segundo tipo de conductividad de una bolsa (11) que rodea la región (16) de contacto de drenaje modificada, en el que el transistor (2) de efecto de campo de unión tiene una región (16A) de contacto de fuente dopada pesadamente del segundo tipo de conductividad que se conecta eléctricamente a una región (161) de contacto de drenaje dopada pesadamente del segundo tipo de conductividad del primer transistor (1) de efecto de campo de compuerta aislado, en el que tanto el primer transistor (1) de efecto de campo de compuerta aislado como el segundo transistor (2) de efecto de campo con región de contacto de drenaje modificado se incorporan en la región de superficie de un sustrato (10) común, en el que en dicho sustrato común, la región (161) de contacto de drenaje del primer transistor de efecto de campo de compuerta aislada se separa y se aísla de la región (16A) de contacto fuente del transistor de efecto de campo de unión, el primer transistor de efecto de campo de compuerta aislado tiene una región (131) fuente del segundo tipo de conductividad, y en el que la tensión disruptiva del primer transistor (1) de efecto de campo de compuesta aislada es mayor que la tensión de estrangulamiento, Vp, del segundo transistor (2) de efecto de campo.

Description

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Claims (1)

  1. imagen1
ES15161312.2T 2008-04-04 2009-04-03 Dispositivo de transistor bipolar de compuerta aislada que comprende un transistor de efecto de campo de compuerta aislado conectado en serie con un transistor de efecto de campo de ensamblaje que tiene un contacto de drenaje modificado Active ES2660471T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0800764 2008-04-04
SE0800764A SE533026C2 (sv) 2008-04-04 2008-04-04 Fälteffekttransistor med isolerad gate seriekopplad med en JFET

Publications (1)

Publication Number Publication Date
ES2660471T3 true ES2660471T3 (es) 2018-03-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
ES15161312.2T Active ES2660471T3 (es) 2008-04-04 2009-04-03 Dispositivo de transistor bipolar de compuerta aislada que comprende un transistor de efecto de campo de compuerta aislado conectado en serie con un transistor de efecto de campo de ensamblaje que tiene un contacto de drenaje modificado

Country Status (6)

Country Link
US (1) US8264015B2 (es)
EP (2) EP2916359B1 (es)
JP (1) JP5449319B2 (es)
ES (1) ES2660471T3 (es)
SE (1) SE533026C2 (es)
WO (1) WO2009123559A1 (es)

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US8344472B2 (en) * 2010-03-30 2013-01-01 Freescale Semiconductor, Inc. Semiconductor device and method
US9105493B2 (en) * 2012-05-21 2015-08-11 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
US20130320445A1 (en) * 2012-06-04 2013-12-05 Ming-Tsung Lee High voltage metal-oxide-semiconductor transistor device
SE537230C2 (sv) * 2013-05-16 2015-03-10 Klas Håkan Eklund Med K Eklund Innovation F Bipolär transistorförstärkarkrets med isolerad gate
US9543290B2 (en) 2014-01-23 2017-01-10 International Business Machines Corporation Normally-off junction field-effect transistors and application to complementary circuits
US9269808B2 (en) 2014-02-21 2016-02-23 Vanguard International Semiconductor Corporation Method and apparatus for power device with depletion structure
US9306034B2 (en) 2014-02-24 2016-04-05 Vanguard International Semiconductor Corporation Method and apparatus for power device with multiple doped regions
US9608107B2 (en) 2014-02-27 2017-03-28 Vanguard International Semiconductor Corporation Method and apparatus for MOS device with doped region
SE542311C2 (en) 2018-03-16 2020-04-07 Klas Haakan Eklund Med Firma K Eklund Innovation A semiconductor device comprising a low voltage insulated gate field effect transistor connected in series with a high voltage field effect transistor
US11031480B2 (en) 2019-09-13 2021-06-08 K. Eklund Innovation Semiconductor device, comprising an insulated gate field effect transistor connected in series with a field effect transistor
US11837658B1 (en) * 2022-06-21 2023-12-05 K. Eklund Innovation Semiconductor device comprising a lateral super junction field effect transistor

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Also Published As

Publication number Publication date
SE0800764L (sv) 2009-10-05
US20100327330A1 (en) 2010-12-30
US8264015B2 (en) 2012-09-11
JP2011517511A (ja) 2011-06-09
EP2260514A1 (en) 2010-12-15
EP2916359B1 (en) 2017-12-13
EP2916359A1 (en) 2015-09-09
WO2009123559A1 (en) 2009-10-08
JP5449319B2 (ja) 2014-03-19
SE533026C2 (sv) 2010-06-08
EP2260514A4 (en) 2012-11-21

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