ES372163A1 - Metodo de fabricacion de puntas de contacto de nitruro de silicio. - Google Patents
Metodo de fabricacion de puntas de contacto de nitruro de silicio.Info
- Publication number
- ES372163A1 ES372163A1 ES372163A ES372163A ES372163A1 ES 372163 A1 ES372163 A1 ES 372163A1 ES 372163 A ES372163 A ES 372163A ES 372163 A ES372163 A ES 372163A ES 372163 A1 ES372163 A1 ES 372163A1
- Authority
- ES
- Spain
- Prior art keywords
- silicon nitride
- nitride whiskers
- vls
- crystallization
- translation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6814300A NL6814300A (de) | 1968-10-05 | 1968-10-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES372163A1 true ES372163A1 (es) | 1971-09-16 |
Family
ID=19804857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES372163A Expired ES372163A1 (es) | 1968-10-05 | 1969-10-03 | Metodo de fabricacion de puntas de contacto de nitruro de silicio. |
Country Status (8)
| Country | Link |
|---|---|
| BE (1) | BE739857A (de) |
| BR (1) | BR6913045D0 (de) |
| CH (1) | CH503517A (de) |
| DE (1) | DE1950023A1 (de) |
| ES (1) | ES372163A1 (de) |
| FR (1) | FR2019997A1 (de) |
| GB (1) | GB1278838A (de) |
| NL (1) | NL6814300A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4396587A (en) * | 1980-08-29 | 1983-08-02 | Asahi-Dow Limited | Method for manufacture of silicon nitride |
| US4827383A (en) * | 1988-04-22 | 1989-05-02 | Michael Karas | Self-adjusting headlight system for vehicles |
| RU2137708C1 (ru) * | 1998-03-13 | 1999-09-20 | Институт структурной макрокинетики и проблем материаловедения РАН | Способ получения нитрида кремния с повышенным содержанием альфа-фазы |
| RU2149824C1 (ru) * | 1999-01-29 | 2000-05-27 | Институт структурной макрокинетики и проблем материаловедения РАН | Нитрид кремния с повышенным содержанием альфа-фазы |
-
1968
- 1968-10-05 NL NL6814300A patent/NL6814300A/xx unknown
-
1969
- 1969-10-02 CH CH1489169A patent/CH503517A/de not_active IP Right Cessation
- 1969-10-03 ES ES372163A patent/ES372163A1/es not_active Expired
- 1969-10-03 GB GB4866869A patent/GB1278838A/en not_active Expired
- 1969-10-03 DE DE19691950023 patent/DE1950023A1/de active Pending
- 1969-10-03 FR FR6933845A patent/FR2019997A1/fr not_active Withdrawn
- 1969-10-03 BE BE739857D patent/BE739857A/xx not_active IP Right Cessation
- 1969-10-06 BR BR21304569A patent/BR6913045D0/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH503517A (de) | 1971-02-28 |
| NL6814300A (de) | 1970-04-07 |
| BR6913045D0 (pt) | 1973-04-10 |
| GB1278838A (en) | 1972-06-21 |
| FR2019997A1 (de) | 1970-07-10 |
| BE739857A (de) | 1970-04-06 |
| DE1950023A1 (de) | 1970-04-09 |
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