JPS526080A - Production method of semiconductor wafer - Google Patents

Production method of semiconductor wafer

Info

Publication number
JPS526080A
JPS526080A JP50082391A JP8239175A JPS526080A JP S526080 A JPS526080 A JP S526080A JP 50082391 A JP50082391 A JP 50082391A JP 8239175 A JP8239175 A JP 8239175A JP S526080 A JPS526080 A JP S526080A
Authority
JP
Japan
Prior art keywords
production method
semiconductor wafer
wafer
epitaxial film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50082391A
Other languages
Japanese (ja)
Inventor
Shinobu Fukunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50082391A priority Critical patent/JPS526080A/en
Publication of JPS526080A publication Critical patent/JPS526080A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:In order to prevent the self diffusion of the wafer composing atom on a epitaxial film, through letting silicon carbide interfare in the middle of a silicon epitaxial film being grown on a insulator wafer and the wafer itself.
JP50082391A 1975-07-03 1975-07-03 Production method of semiconductor wafer Pending JPS526080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50082391A JPS526080A (en) 1975-07-03 1975-07-03 Production method of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50082391A JPS526080A (en) 1975-07-03 1975-07-03 Production method of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS526080A true JPS526080A (en) 1977-01-18

Family

ID=13773269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50082391A Pending JPS526080A (en) 1975-07-03 1975-07-03 Production method of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS526080A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169145A (en) * 1984-09-12 1986-04-09 Toshiba Corp Manufacture of semiconductor substrate
JPS6237394U (en) * 1985-08-24 1987-03-05
JP2010502023A (en) * 2006-08-30 2010-01-21 ジルトロニック アクチエンゲゼルシャフト Multilayer semiconductor wafer and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918430A (en) * 1972-06-09 1974-02-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918430A (en) * 1972-06-09 1974-02-18

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169145A (en) * 1984-09-12 1986-04-09 Toshiba Corp Manufacture of semiconductor substrate
JPS6237394U (en) * 1985-08-24 1987-03-05
JP2010502023A (en) * 2006-08-30 2010-01-21 ジルトロニック アクチエンゲゼルシャフト Multilayer semiconductor wafer and manufacturing method thereof
US8395164B2 (en) 2006-08-30 2013-03-12 Siltronic Ag Multilayered semiconductor wafer and process for manufacturing the same

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