ES401854A1 - A SEMICONDUCTOR DEVICE. - Google Patents

A SEMICONDUCTOR DEVICE.

Info

Publication number
ES401854A1
ES401854A1 ES401854A ES401854A ES401854A1 ES 401854 A1 ES401854 A1 ES 401854A1 ES 401854 A ES401854 A ES 401854A ES 401854 A ES401854 A ES 401854A ES 401854 A1 ES401854 A1 ES 401854A1
Authority
ES
Spain
Prior art keywords
region
contiguous
conductivity
type
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES401854A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES401854A1 publication Critical patent/ES401854A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Un dispositivo semiconductor que tiene un cuerpo semiconductor que comprende al menos un transistor de efecto de campo de mando aislado, el cual cuerpo comprende una primera región de un primer tipo de conductividad y una segunda región del segundo tipo de conductividad contigua a la superficie y que forma una unión p-n con la primera región, estando provistas zonas de alimentación y salida del primer tipo de conductividad contiguas a la superficie en la segunda región , estando provista al menos una capa de electrodo de mando entre las zonas de alimentación y salida y estando separada del cuerpo semiconductor por una capa aislante, caracterizado porque el dispositivo comprende un trazado de material eléctricamente aislante que está intercalado al menos parcialmente en el cuerpo semiconductor y que rodea la segunda región de manera sustancialmente total, la unión p-n entre la primera y la segunda región contigua al trazado intercalado, y las zonas de alimentación y salida contiguas al trazado intercalado.A semiconductor device having a semiconductor body comprising at least one isolated command field effect transistor, which body comprises a first region of a first type of conductivity and a second region of a second type of conductivity contiguous to the surface and having forms a p-n junction with the first region, feed and outlet zones of the first type of conductivity contiguous to the surface being provided in the second region, at least one control electrode layer being provided between the feed and outlet zones and being separated of the semiconductor body by an insulating layer, characterized in that the device comprises a trace of electrically insulating material that is intercalated at least partially in the semiconductor body and that surrounds the second region substantially completely, the p-n junction between the first and the second region contiguous to the intercalated layout, and the supply and exit zones contiguous to the interleaved layout.

ES401854A 1971-06-08 1972-04-18 A SEMICONDUCTOR DEVICE. Expired ES401854A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7107805.A NL160988C (en) 1971-06-08 1971-06-08 SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST ONE FIRST FIELD EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURE OF THE SEMICONDUCTOR DEVICE.

Publications (1)

Publication Number Publication Date
ES401854A1 true ES401854A1 (en) 1975-10-16

Family

ID=19813322

Family Applications (2)

Application Number Title Priority Date Filing Date
ES401854A Expired ES401854A1 (en) 1971-06-08 1972-04-18 A SEMICONDUCTOR DEVICE.
ES408617A Expired ES408617A1 (en) 1971-06-08 1972-11-15 A METHOD FOR THE MANUFACTURE OF A SEMICONDUC-TOR DEVICE.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES408617A Expired ES408617A1 (en) 1971-06-08 1972-11-15 A METHOD FOR THE MANUFACTURE OF A SEMICONDUC-TOR DEVICE.

Country Status (16)

Country Link
JP (5) JPS5416194B1 (en)
AT (1) AT351597B (en)
BE (1) BE782285A (en)
BR (1) BR7202321D0 (en)
CA (1) CA963172A (en)
CH (1) CH542519A (en)
DE (1) DE2218680C2 (en)
DK (1) DK135819B (en)
ES (2) ES401854A1 (en)
FR (1) FR2140383B1 (en)
GB (1) GB1389311A (en)
IN (1) IN139051B (en)
IT (1) IT958758B (en)
NL (1) NL160988C (en)
NO (1) NO134676C (en)
SE (1) SE371333B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7205000A (en) * 1972-04-14 1973-10-16
CA1017073A (en) * 1974-06-03 1977-09-06 Fairchild Camera And Instrument Corporation Complementary insulated gate field effect transistor structure and process for fabricating the structure
US3920481A (en) * 1974-06-03 1975-11-18 Fairchild Camera Instr Co Process for fabricating insulated gate field effect transistor structure
US3943542A (en) * 1974-11-06 1976-03-09 International Business Machines, Corporation High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
JPS5286083A (en) 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
US4277882A (en) * 1978-12-04 1981-07-14 Fairchild Camera And Instrument Corporation Method of producing a metal-semiconductor field-effect transistor
JPS58222558A (en) * 1982-06-18 1983-12-24 Hitachi Ltd Semiconductor device
JPS5955052A (en) * 1982-09-24 1984-03-29 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
US4470191A (en) * 1982-12-09 1984-09-11 International Business Machines Corporation Process for making complementary transistors by sequential implantations using oxidation barrier masking layer
JPS60106890A (en) * 1983-11-14 1985-06-12 Shin Etsu Chem Co Ltd Grease composition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356858A (en) * 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
GB1086607A (en) * 1965-06-03 1967-10-11 Ncr Co Method of electrically isolating components in solid-state electronic circuits
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
US3534234A (en) * 1966-12-15 1970-10-13 Texas Instruments Inc Modified planar process for making semiconductor devices having ultrafine mesa type geometry
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric

Also Published As

Publication number Publication date
NL160988C (en) 1979-12-17
FR2140383B1 (en) 1977-08-19
CH542519A (en) 1973-09-30
IT958758B (en) 1973-10-30
JPS51139276A (en) 1976-12-01
DE2218680A1 (en) 1972-12-28
JPS51139277A (en) 1976-12-01
JPS51102481A (en) 1976-09-09
NL160988B (en) 1979-07-16
DK135819B (en) 1977-06-27
JPS5415668B2 (en) 1979-06-16
CA963172A (en) 1975-02-18
IN139051B (en) 1976-05-01
BR7202321D0 (en) 1973-06-07
NL7107805A (en) 1972-12-12
NO134676B (en) 1976-08-16
ATA338972A (en) 1979-01-15
DE2218680C2 (en) 1982-04-29
FR2140383A1 (en) 1973-01-19
JPS5415667B2 (en) 1979-06-16
JPS5416194B1 (en) 1979-06-20
ES408617A1 (en) 1975-10-01
GB1389311A (en) 1975-04-03
AT351597B (en) 1979-08-10
JPS5416397B2 (en) 1979-06-21
BE782285A (en) 1972-10-18
DK135819C (en) 1977-11-28
NO134676C (en) 1976-11-24
SE371333B (en) 1974-11-11
JPS568880A (en) 1981-01-29

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