ES455227A1 - SUB-TREATMENT COATING PROCEDURE BY PLASMA DEPOSITION. - Google Patents

SUB-TREATMENT COATING PROCEDURE BY PLASMA DEPOSITION.

Info

Publication number
ES455227A1
ES455227A1 ES455227A ES455227A ES455227A1 ES 455227 A1 ES455227 A1 ES 455227A1 ES 455227 A ES455227 A ES 455227A ES 455227 A ES455227 A ES 455227A ES 455227 A1 ES455227 A1 ES 455227A1
Authority
ES
Spain
Prior art keywords
substrates
reactor
plasma deposition
gases
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES455227A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/651,556 external-priority patent/US4142004A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES455227A1 publication Critical patent/ES455227A1/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)

Abstract

Procedimiento de recubrimiento de substratos por deposición de plasma, en un tipo de reactor de flujo radial, sin sublimación catódica, activado por radiofrecuencia que comprende las etapas de introducir los gases de reacción en un reactor rarificado que contiene los substratos que se desean recubrir; establecer un flujo laminar de gases por los sustratos; y producir una reacción de descarga luminosa de plasma en el reactor en un punto adyacente a los substratos; caracterizado porque la etapa de introducción de gases comprende introducir silano, amoniaco y un gas vehículo inerte en dicho reactor pero evitando prácticamente la introducción de otros gases reactivos con los mismos.Method for coating substrates by plasma deposition, in a type of radial flow reactor, without cathodic sublimation, activated by radiofrequency, comprising the steps of introducing the reaction gases into a rarefied reactor containing the substrates to be coated; establish a laminar flow of gases through the substrates; and producing a plasma glow discharge reaction in the reactor at a point adjacent to the substrates; characterized in that the gas introduction step comprises introducing silane, ammonia and an inert carrier gas into said reactor but practically avoiding the introduction of other gases reactive with them.

ES455227A 1976-01-22 1977-01-21 SUB-TREATMENT COATING PROCEDURE BY PLASMA DEPOSITION. Expired ES455227A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65155776A 1976-01-22 1976-01-22
US05/651,556 US4142004A (en) 1976-01-22 1976-01-22 Method of coating semiconductor substrates

Publications (1)

Publication Number Publication Date
ES455227A1 true ES455227A1 (en) 1978-04-16

Family

ID=27096092

Family Applications (1)

Application Number Title Priority Date Filing Date
ES455227A Expired ES455227A1 (en) 1976-01-22 1977-01-21 SUB-TREATMENT COATING PROCEDURE BY PLASMA DEPOSITION.

Country Status (7)

Country Link
JP (1) JPS52115785A (en)
DE (1) DE2702165A1 (en)
ES (1) ES455227A1 (en)
FR (1) FR2339251A1 (en)
IT (1) IT1075610B (en)
NL (1) NL7700641A (en)
SE (1) SE7700229L (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54128283A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Manufacture of semiconductor device
JPS5643731A (en) * 1979-09-17 1981-04-22 Mitsubishi Electric Corp Film forming method
JPS5687353A (en) * 1979-12-18 1981-07-15 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor integrated circuit device
JPS5745931A (en) * 1980-09-04 1982-03-16 Fujitsu Ltd Semiconductor device with multilayer passivation film and manufacture thereof
JPS57141935A (en) * 1981-02-25 1982-09-02 Nec Corp Manufacture of semiconductor device
JPS58131733A (en) * 1982-01-29 1983-08-05 Toshiba Corp Semiconductor device
DE3272669D1 (en) * 1982-03-18 1986-09-25 Ibm Deutschland Plasma-reactor and its use in etching and coating substrates
JPS598341A (en) * 1982-07-06 1984-01-17 Toshiba Corp Semiconductor device
JPS5994848A (en) * 1982-11-24 1984-05-31 Fuji Electric Co Ltd Manufacture of semiconductor device
US4513684A (en) * 1982-12-22 1985-04-30 Energy Conversion Devices, Inc. Upstream cathode assembly
US4455351A (en) * 1983-06-13 1984-06-19 At&T Bell Laboratories Preparation of photodiodes
JPS61128403A (en) * 1984-11-28 1986-06-16 鐘淵化学工業株式会社 Non-crystalline silicon based insulating material
US4618541A (en) * 1984-12-21 1986-10-21 Advanced Micro Devices, Inc. Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article
JPS61284928A (en) * 1985-06-10 1986-12-15 Mitsubishi Electric Corp Semiconductor device
JPH084109B2 (en) * 1987-08-18 1996-01-17 富士通株式会社 Semiconductor device and manufacturing method thereof
DE707661T1 (en) * 1994-04-22 1996-10-10 Innovatique Sa METHOD AND OVEN FOR NITRATING METALLIC MOLDED PARTS AT LOW PRESSURE
FR2725015B1 (en) * 1994-09-23 1996-12-20 Innovatique Sa OVEN FOR USE IN LOW PRESSURE NITRURATION OF A METAL PART
JP6146160B2 (en) * 2013-06-26 2017-06-14 東京エレクトロン株式会社 Film forming method, storage medium, and film forming apparatus

Also Published As

Publication number Publication date
IT1075610B (en) 1985-04-22
FR2339251A1 (en) 1977-08-19
JPS52115785A (en) 1977-09-28
NL7700641A (en) 1977-07-26
SE7700229L (en) 1977-07-23
DE2702165A1 (en) 1977-07-28

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