JPS5745931A - Semiconductor device with multilayer passivation film and manufacture thereof - Google Patents

Semiconductor device with multilayer passivation film and manufacture thereof

Info

Publication number
JPS5745931A
JPS5745931A JP55121702A JP12170280A JPS5745931A JP S5745931 A JPS5745931 A JP S5745931A JP 55121702 A JP55121702 A JP 55121702A JP 12170280 A JP12170280 A JP 12170280A JP S5745931 A JPS5745931 A JP S5745931A
Authority
JP
Japan
Prior art keywords
layer
substrate
stress
si3n4
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55121702A
Other languages
Japanese (ja)
Inventor
Daijiro Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55121702A priority Critical patent/JPS5745931A/en
Publication of JPS5745931A publication Critical patent/JPS5745931A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To alleviate the stress in a multilayer film by laminating a CVD-Si3N4 film on a substrate by switching the frequency of a voltage to be applied to the substrate, thereby alternately laminating a layer having tensile stress and a layer having compression stress. CONSTITUTION:An aluminum wire 4 is formed via a PSG2 on an Si substrate 1. When a protective film is laminated thereon by a plasma CVD method, 50KHz is applied initially to a substrate 1 to form an Si3N4 M, the frequency is varied, and 13.56MHz is applied to the substrate 1 to form an Si3N4 K thereon. Resultantly, the layer M has tensile stress, the layer K has compression stress, and when these layers are laminated, the stresses are cancelled to one another, thereby remarkably suppressing the defect. The thickness ratio of the K layer/M layer is preferably approx. 0.1-0.7, and out of this range, the balance of the stress is broken. Since moisture invaded to the boundary between the aluminum and the PSG can be entirely shielded according to this configuration, no disconnection of the aluminum occurs, but effective protective film can be obtained. Further multilayer structure may also be formed as required.
JP55121702A 1980-09-04 1980-09-04 Semiconductor device with multilayer passivation film and manufacture thereof Pending JPS5745931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121702A JPS5745931A (en) 1980-09-04 1980-09-04 Semiconductor device with multilayer passivation film and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121702A JPS5745931A (en) 1980-09-04 1980-09-04 Semiconductor device with multilayer passivation film and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5745931A true JPS5745931A (en) 1982-03-16

Family

ID=14817757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121702A Pending JPS5745931A (en) 1980-09-04 1980-09-04 Semiconductor device with multilayer passivation film and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5745931A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111329A (en) * 1982-12-17 1984-06-27 Fuji Electric Corp Res & Dev Ltd Manufacture of coated thin-film
JPS6395674A (en) * 1986-10-13 1988-04-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS63245607A (en) * 1987-03-31 1988-10-12 株式会社クボタ Paddy field work vehicle
JPH0193117A (en) * 1987-10-05 1989-04-12 Nec Corp Manufacture of film
JPH03219506A (en) * 1990-01-25 1991-09-26 Agency Of Ind Science & Technol Accumulation method for thin film
US5160998A (en) * 1987-08-18 1992-11-03 Fujitsu Limited Semiconductor device and method of manufacturing the same
JP2008300678A (en) * 2007-05-31 2008-12-11 Oki Electric Ind Co Ltd Semiconductor device manufacturing method and semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117887A (en) * 1975-04-09 1976-10-16 Nec Corp Semiconductor ic device
JPS52115785A (en) * 1976-01-22 1977-09-28 Western Electric Co Process for coating substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117887A (en) * 1975-04-09 1976-10-16 Nec Corp Semiconductor ic device
JPS52115785A (en) * 1976-01-22 1977-09-28 Western Electric Co Process for coating substrate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111329A (en) * 1982-12-17 1984-06-27 Fuji Electric Corp Res & Dev Ltd Manufacture of coated thin-film
JPS6395674A (en) * 1986-10-13 1988-04-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS63245607A (en) * 1987-03-31 1988-10-12 株式会社クボタ Paddy field work vehicle
US5160998A (en) * 1987-08-18 1992-11-03 Fujitsu Limited Semiconductor device and method of manufacturing the same
JPH0193117A (en) * 1987-10-05 1989-04-12 Nec Corp Manufacture of film
JPH03219506A (en) * 1990-01-25 1991-09-26 Agency Of Ind Science & Technol Accumulation method for thin film
JP2008300678A (en) * 2007-05-31 2008-12-11 Oki Electric Ind Co Ltd Semiconductor device manufacturing method and semiconductor device

Similar Documents

Publication Publication Date Title
JPS56150830A (en) Semiconductor device
JPS5459080A (en) Semiconductor device
US5055906A (en) Semiconductor device having a composite insulating interlayer
JPS6447052A (en) Semiconductor device and manufacture thereof
US4504540A (en) Thin film element
JPH01207932A (en) Semiconductor device
JPS61279132A (en) Semiconductor device
JPS6417446A (en) Semiconductor device and manufacture thereof
JPS6481236A (en) Semiconductor integrated circuit device
JPS5642348A (en) Semiconductor device
JPS62128128A (en) Semiconductor device
JPS6472568A (en) Photoelectric conversion device
JPS57103333A (en) Manufacture of semiconductor device
JP2990322B2 (en) Semiconductor device
JPS6457645A (en) Semiconductor device and manufacture thereof
JPS6484743A (en) Semiconductor device
JPS5796542A (en) Semiconductor device
JPS6482652A (en) Manufacture of semiconductor device
JPS6410631A (en) Semiconductor integrated circuit
JPH01309333A (en) Resin sealed type semiconductor device
JPS6448393A (en) Thin film el display element and manufacture thereof
JPS5756948A (en) Manufacture of semiconductor device
JPS5795626A (en) Manufacture of semiconductor device
JPH02116132A (en) Protective film for wiring of integrated circuit
JPS55111163A (en) Semiconductor device and manufacturing method thereof