ES457439A1 - Procedimiento para fabricar fotodiodos de heterounion. - Google Patents

Procedimiento para fabricar fotodiodos de heterounion.

Info

Publication number
ES457439A1
ES457439A1 ES457439A ES457439A ES457439A1 ES 457439 A1 ES457439 A1 ES 457439A1 ES 457439 A ES457439 A ES 457439A ES 457439 A ES457439 A ES 457439A ES 457439 A1 ES457439 A1 ES 457439A1
Authority
ES
Spain
Prior art keywords
indium phosphide
light responsive
responsive devices
cadmium sulphide
phosphide light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES457439A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/672,878 external-priority patent/US4081290A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES457439A1 publication Critical patent/ES457439A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/127The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/125The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2902Materials being Group IVA materials
    • H10P14/2903Carbon, e.g. diamond-like carbon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2923Materials being conductive materials, e.g. metallic silicides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202Materials thereof
    • H10P14/3214Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218Phosphides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428Sulfides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/544Solar cells from Group III-V materials

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

Procedimiento para fabricar fotodiodos de hererounión, del tipo que comprenden una capa de fosfuro de indio de tipo p y una capa de sulfuro de cadmio de tipo n;
ES457439A 1976-04-02 1977-04-01 Procedimiento para fabricar fotodiodos de heterounion. Expired ES457439A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/672,878 US4081290A (en) 1974-11-08 1976-04-02 Solar cells and photovoltaic devices of InP/CdS

Publications (1)

Publication Number Publication Date
ES457439A1 true ES457439A1 (es) 1978-03-01

Family

ID=24700390

Family Applications (1)

Application Number Title Priority Date Filing Date
ES457439A Expired ES457439A1 (es) 1976-04-02 1977-04-01 Procedimiento para fabricar fotodiodos de heterounion.

Country Status (9)

Country Link
JP (1) JPS52120786A (es)
BE (1) BE853029A (es)
DE (1) DE2714221A1 (es)
ES (1) ES457439A1 (es)
FR (1) FR2346859A1 (es)
GB (1) GB1563945A (es)
IL (1) IL51751A0 (es)
IT (1) IT1076266B (es)
NL (1) NL7703585A (es)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50153885A (es) * 1974-05-31 1975-12-11
JPS51890A (en) * 1974-06-20 1976-01-07 Shunpei Yamazaki Handotaisochi oyobi sonosakuseihoho

Also Published As

Publication number Publication date
JPS52120786A (en) 1977-10-11
DE2714221A1 (de) 1977-10-20
GB1563945A (en) 1980-04-02
IT1076266B (it) 1985-04-27
BE853029A (fr) 1977-07-18
NL7703585A (nl) 1977-10-04
FR2346859A1 (fr) 1977-10-28
IL51751A0 (en) 1977-05-31

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