ES457439A1 - Procedimiento para fabricar fotodiodos de heterounion. - Google Patents
Procedimiento para fabricar fotodiodos de heterounion.Info
- Publication number
- ES457439A1 ES457439A1 ES457439A ES457439A ES457439A1 ES 457439 A1 ES457439 A1 ES 457439A1 ES 457439 A ES457439 A ES 457439A ES 457439 A ES457439 A ES 457439A ES 457439 A1 ES457439 A1 ES 457439A1
- Authority
- ES
- Spain
- Prior art keywords
- indium phosphide
- light responsive
- responsive devices
- cadmium sulphide
- phosphide light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2903—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2923—Materials being conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3218—Phosphides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
- H10P14/3428—Sulfides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Procedimiento para fabricar fotodiodos de hererounión, del tipo que comprenden una capa de fosfuro de indio de tipo p y una capa de sulfuro de cadmio de tipo n;
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/672,878 US4081290A (en) | 1974-11-08 | 1976-04-02 | Solar cells and photovoltaic devices of InP/CdS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES457439A1 true ES457439A1 (es) | 1978-03-01 |
Family
ID=24700390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES457439A Expired ES457439A1 (es) | 1976-04-02 | 1977-04-01 | Procedimiento para fabricar fotodiodos de heterounion. |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS52120786A (es) |
| BE (1) | BE853029A (es) |
| DE (1) | DE2714221A1 (es) |
| ES (1) | ES457439A1 (es) |
| FR (1) | FR2346859A1 (es) |
| GB (1) | GB1563945A (es) |
| IL (1) | IL51751A0 (es) |
| IT (1) | IT1076266B (es) |
| NL (1) | NL7703585A (es) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50153885A (es) * | 1974-05-31 | 1975-12-11 | ||
| JPS51890A (en) * | 1974-06-20 | 1976-01-07 | Shunpei Yamazaki | Handotaisochi oyobi sonosakuseihoho |
-
1977
- 1977-03-28 IL IL51751A patent/IL51751A0/xx unknown
- 1977-03-29 IT IT21853/77A patent/IT1076266B/it active
- 1977-03-30 BE BE176243A patent/BE853029A/xx unknown
- 1977-03-30 DE DE19772714221 patent/DE2714221A1/de active Pending
- 1977-04-01 JP JP3622177A patent/JPS52120786A/ja active Pending
- 1977-04-01 GB GB13755/77A patent/GB1563945A/en not_active Expired
- 1977-04-01 ES ES457439A patent/ES457439A1/es not_active Expired
- 1977-04-01 FR FR7710006A patent/FR2346859A1/fr not_active Withdrawn
- 1977-04-01 NL NL7703585A patent/NL7703585A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52120786A (en) | 1977-10-11 |
| DE2714221A1 (de) | 1977-10-20 |
| GB1563945A (en) | 1980-04-02 |
| IT1076266B (it) | 1985-04-27 |
| BE853029A (fr) | 1977-07-18 |
| NL7703585A (nl) | 1977-10-04 |
| FR2346859A1 (fr) | 1977-10-28 |
| IL51751A0 (en) | 1977-05-31 |
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