ES461397A1 - Procedimiento litografico para la fabricacion de circuitos -impresos e integrados y articulos similares. - Google Patents
Procedimiento litografico para la fabricacion de circuitos -impresos e integrados y articulos similares.Info
- Publication number
- ES461397A1 ES461397A1 ES461397A ES461397A ES461397A1 ES 461397 A1 ES461397 A1 ES 461397A1 ES 461397 A ES461397 A ES 461397A ES 461397 A ES461397 A ES 461397A ES 461397 A1 ES461397 A1 ES 461397A1
- Authority
- ES
- Spain
- Prior art keywords
- radiation curable
- resultant product
- curable epoxy
- containing resist
- epoxy containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004593 Epoxy Substances 0.000 title abstract 3
- 230000005855 radiation Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000003153 chemical reaction reagent Substances 0.000 abstract 1
- 229920001577 copolymer Polymers 0.000 abstract 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Electron Beam Exposure (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Materials For Photolithography (AREA)
Abstract
Procedimiento litográfico para la fabricación de circuitos impresos e integrados y artículos similares, que incluye delinear según un modelo al menos una superficie de un cuerpo sobre la cual existe un material resistente negativo fuertemente adherido, seguido por el procesado del cuerpo enmascarado por delineación según un modelo y separación del material resistente, que comprende las etapas de expone selectivamente dicho material resistente a radiación con zonas irradiadas correspondientes a una imagen negativa del modelo que se vaya a delinear sobre el sustrato, de forma que dicha radiación reduce la solubilidad de dicho material resistente con relación a un reactivo de revelado, y consistiendo dicho material resistente esencialmente en un polímero no curado que tiene un grupo epóxido que se cura por radiación incidente, y someter el material resistente irradiado a dicho reactivo de revelado a fin de eliminar selectivamente porciones no irradiadas del mismo, después de lo cual, un substrato, junto con un material resistente ahora delineado según un modelo, se someten a una influencia modificadora para dicho substrato, dando lugar de ese modo a la modificación del material del substrato en las zonas desnudadas durante el revelado; caracterizado porque dicho polímero no curado está etilénicamente saturado de forma prácticamente total; porque dicho polímero tiene un peso molecular promedio en peso de 103 a 106 aproximadamente; porque dicho grupo epóxido **(Fórmula)** se conecta a la cadena polimérica principal a través de al menos un átomo de ramificación; porque dicho grupo epóxido está inmodificado por esterificación con ácido metacrílico; porque la distribución de pesos moleculares de dicho polímero, definida como Mw/Mn, en donde Mw es el peso molecular promedio en peso y Mn es el peso molecular promedio en número, es numéricamente igual a un valor inferior a 5; porque el polímero contiene cadenas laterales arílicas halogenadas para aumentar la estabilidad durante el procesado; y porque dicha irradiación se selecciona del grupo formado por energía de rayos ultravioletas, energía de ondas de rayos X y radiación con electrones.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71239476A | 1976-08-06 | 1976-08-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES461397A1 true ES461397A1 (es) | 1979-05-16 |
Family
ID=24861928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES461397A Expired ES461397A1 (es) | 1976-08-06 | 1977-08-05 | Procedimiento litografico para la fabricacion de circuitos -impresos e integrados y articulos similares. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4130424A (es) |
| JP (1) | JPS5320771A (es) |
| BE (1) | BE857537A (es) |
| CA (1) | CA1088737A (es) |
| DE (1) | DE2735377C2 (es) |
| ES (1) | ES461397A1 (es) |
| FR (1) | FR2371714A1 (es) |
| GB (1) | GB1588892A (es) |
| IT (1) | IT1086540B (es) |
| NL (1) | NL170775C (es) |
| SE (1) | SE420244B (es) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2352007A1 (fr) * | 1976-05-21 | 1977-12-16 | Thomson Csf | Resine sensible aux electrons et procede de fabrication de ladite resine |
| FR2382709A1 (fr) * | 1977-03-04 | 1978-09-29 | Thomson Csf | Famille de composes comportant un cycle thiirane, reticulables par irradiation photonique |
| US4279986A (en) * | 1977-06-01 | 1981-07-21 | Nippon Electric Co., Ltd. | Negative resist and radical scavenger composition with capability of preventing post-irradiation polymerization |
| CS193322B1 (en) * | 1977-11-07 | 1979-10-31 | Jaroslav Kalal | Electron resisit |
| US4208211A (en) * | 1978-05-23 | 1980-06-17 | Bell Telephone Laboratories, Incorporated | Fabrication based on radiation sensitive resists and related products |
| US4225664A (en) * | 1979-02-22 | 1980-09-30 | Bell Telephone Laboratories, Incorporated | X-ray resist containing poly(2,3-dichloro-1-propyl acrylate) and poly(glycidyl methacrylate-co-ethyl acrylate) |
| JPS5629231A (en) * | 1979-08-17 | 1981-03-24 | Hitachi Ltd | Radiation sensitive material and pattern forming method |
| US4262081A (en) * | 1979-11-21 | 1981-04-14 | Bell Telephone Laboratories, Incorporated | Fabrication based on radiation sensitive resists of halo-alkyl styrene polymers |
| US4332881A (en) * | 1980-07-28 | 1982-06-01 | Bell Telephone Laboratories, Incorporated | Resist adhesion in integrated circuit processing |
| US4430419A (en) * | 1981-01-22 | 1984-02-07 | Nippon Telegraph & Telephone Public Corporation | Positive resist and method for manufacturing a pattern thereof |
| DE3109809C2 (de) * | 1981-03-13 | 1986-07-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von Resiststrukturen |
| DE3109728C2 (de) * | 1981-03-13 | 1986-08-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von Resiststrukturen |
| JPS58168047A (ja) * | 1982-03-30 | 1983-10-04 | Somar Corp | 感光性材料 |
| US4795693A (en) * | 1983-07-13 | 1989-01-03 | American Telephone And Telegraph Company, At&T Technologies, Inc. | Multilayer circuit board fabrication process |
| US4628022A (en) * | 1983-07-13 | 1986-12-09 | At&T Technologies, Inc. | Multilayer circuit board fabrication process and polymer insulator used therein |
| US4511757A (en) * | 1983-07-13 | 1985-04-16 | At&T Technologies, Inc. | Circuit board fabrication leading to increased capacity |
| JPS6071368U (ja) * | 1983-10-25 | 1985-05-20 | 株式会社新潟工器 | 消雪用ノズル |
| GB2163435B (en) * | 1984-07-11 | 1987-07-22 | Asahi Chemical Ind | Image-forming materials sensitive to high-energy beam |
| JPS61104988A (ja) * | 1984-10-24 | 1986-05-23 | ダウ化工株式会社 | 蓄熱水槽の構造 |
| US5024969A (en) * | 1990-02-23 | 1991-06-18 | Reche John J | Hybrid circuit structure fabrication methods using high energy electron beam curing |
| US5565538A (en) * | 1994-09-21 | 1996-10-15 | Great Lakes Chemical Corporation | Dibromostyrene-glycidyl(meth)acrylate copolymers |
| DE19813670C1 (de) | 1998-03-27 | 1999-07-08 | Daimler Chrysler Ag | Kraftfahrzeug mit einer den Rücksitzbereich vom Vordersitzbereich abtrennenden Trennwand |
| GB0127713D0 (en) * | 2001-11-20 | 2002-01-09 | Eastman Kodak Co | Adhesion promoting polymeric materials and planographic printing elements containing them |
| US7198882B2 (en) * | 2001-11-20 | 2007-04-03 | Eastman Kodak Company | Adhesion promoting polymeric materials and planographic printing elements containing them |
| TWI346838B (en) * | 2003-04-02 | 2011-08-11 | Nissan Chemical Ind Ltd | Epoxy compound and carboxylic acid compound containing composition for forming sublayer coating for use in lithography |
| US9002497B2 (en) * | 2003-07-03 | 2015-04-07 | Kla-Tencor Technologies Corp. | Methods and systems for inspection of wafers and reticles using designer intent data |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1423760A (fr) * | 1963-10-25 | 1966-01-07 | Kalle Ag | Matériel photosensible pour la réalisation photomécanique de formes d'impression et son procédé de fabrication |
| DE1572060C3 (de) * | 1966-01-07 | 1974-10-24 | Kalle Ag, 6202 Wiesbaden-Biebrich | Lichtempfindliche Kopierschicht |
| US3885060A (en) * | 1968-08-23 | 1975-05-20 | Hitachi Ltd | Production of insolubilized organic polymers |
| CA1032392A (en) * | 1973-10-23 | 1978-06-06 | Eugene D. Feit | High energy radiation curable resist and preparatory process |
| US3916035A (en) * | 1973-11-05 | 1975-10-28 | Texas Instruments Inc | Epoxy-polymer electron beam resists |
| US3931435A (en) * | 1974-12-20 | 1976-01-06 | International Business Machines Corporation | Electron beam positive resists containing acetate polymers |
| JPS5299776A (en) * | 1976-02-18 | 1977-08-22 | Hitachi Ltd | Radiation sensitive high polymeric material |
-
1977
- 1977-07-01 US US05/812,231 patent/US4130424A/en not_active Expired - Lifetime
- 1977-07-28 SE SE7708681A patent/SE420244B/xx not_active IP Right Cessation
- 1977-08-04 CA CA284,102A patent/CA1088737A/en not_active Expired
- 1977-08-05 BE BE179950A patent/BE857537A/xx not_active IP Right Cessation
- 1977-08-05 ES ES461397A patent/ES461397A1/es not_active Expired
- 1977-08-05 JP JP9346977A patent/JPS5320771A/ja active Granted
- 1977-08-05 GB GB32882/77A patent/GB1588892A/en not_active Expired
- 1977-08-05 NL NLAANVRAGE7708693,A patent/NL170775C/xx not_active IP Right Cessation
- 1977-08-05 DE DE2735377A patent/DE2735377C2/de not_active Expired
- 1977-08-05 IT IT68825/77A patent/IT1086540B/it active
- 1977-08-08 FR FR7724367A patent/FR2371714A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2735377C2 (de) | 1983-06-23 |
| JPS5751654B2 (es) | 1982-11-02 |
| JPS5320771A (en) | 1978-02-25 |
| SE420244B (sv) | 1981-09-21 |
| GB1588892A (en) | 1981-04-29 |
| CA1088737A (en) | 1980-11-04 |
| FR2371714B1 (es) | 1980-07-11 |
| NL170775C (nl) | 1982-12-16 |
| BE857537A (fr) | 1977-12-01 |
| DE2735377A1 (de) | 1978-02-09 |
| US4130424A (en) | 1978-12-19 |
| NL7708693A (nl) | 1978-02-08 |
| NL170775B (nl) | 1982-07-16 |
| SE7708681L (sv) | 1978-02-07 |
| IT1086540B (it) | 1985-05-28 |
| FR2371714A1 (fr) | 1978-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES461397A1 (es) | Procedimiento litografico para la fabricacion de circuitos -impresos e integrados y articulos similares. | |
| ES480851A1 (es) | Procedimiento de fabricacion de circuitos integrados. | |
| JPS5511217A (en) | Pattern forming method using radiation sensitive high polymer | |
| ES2017615B3 (es) | Composicion de foto-resistencia y circuito impreso. | |
| GB1481909A (en) | Positive acting resists | |
| JPS53111399A (en) | Amorphous dicyclopentadiene ring-opening polymer | |
| JPS5324782A (en) | Forming method of high molecular film patterns by negative resist | |
| JPS52146217A (en) | Positive type radiation sensitive material | |
| JPS5417015A (en) | Radiation sensitive composite | |
| JPS5664336A (en) | Minute pattern forming method | |
| JPS5226249A (en) | Automatic size and shape measuring instrument | |
| JPS52146218A (en) | Positive type radiation sensitive material | |
| FR2389156A1 (fr) | Substance sensible aux rayons x pour photogravure | |
| JPS5558243A (en) | Highly sensitive positive resist composition | |
| JPS53149333A (en) | Radiation sensitive composition | |
| JPS56114943A (en) | Negative type resist material for electron beam | |
| JPS55147624A (en) | Ionized radiation sensitive positive type resist | |
| JPS5786832A (en) | Pattern forming material | |
| JPS53142876A (en) | Development method of electron ray resist and elctron beam resist | |
| Pace | The Isolde Control System-Status Report | |
| JPS5242783A (en) | Radiation detector | |
| JPS5283062A (en) | Photoetching method | |
| JPS524591A (en) | Decomposition of atactic polypropylene with radiation | |
| JPS5550053A (en) | Resist material for fine processing | |
| JPS51140577A (en) | Wafer holder for electronic beam exposing device |