ES461397A1 - Procedimiento litografico para la fabricacion de circuitos -impresos e integrados y articulos similares. - Google Patents

Procedimiento litografico para la fabricacion de circuitos -impresos e integrados y articulos similares.

Info

Publication number
ES461397A1
ES461397A1 ES461397A ES461397A ES461397A1 ES 461397 A1 ES461397 A1 ES 461397A1 ES 461397 A ES461397 A ES 461397A ES 461397 A ES461397 A ES 461397A ES 461397 A1 ES461397 A1 ES 461397A1
Authority
ES
Spain
Prior art keywords
resistant material
polymer
pattern
molecular weight
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES461397A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES461397A1 publication Critical patent/ES461397A1/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Materials For Photolithography (AREA)
  • Electron Beam Exposure (AREA)

Abstract

Procedimiento litográfico para la fabricación de circuitos impresos e integrados y artículos similares, que incluye delinear según un modelo al menos una superficie de un cuerpo sobre la cual existe un material resistente negativo fuertemente adherido, seguido por el procesado del cuerpo enmascarado por delineación según un modelo y separación del material resistente, que comprende las etapas de expone selectivamente dicho material resistente a radiación con zonas irradiadas correspondientes a una imagen negativa del modelo que se vaya a delinear sobre el sustrato, de forma que dicha radiación reduce la solubilidad de dicho material resistente con relación a un reactivo de revelado, y consistiendo dicho material resistente esencialmente en un polímero no curado que tiene un grupo epóxido que se cura por radiación incidente, y someter el material resistente irradiado a dicho reactivo de revelado a fin de eliminar selectivamente porciones no irradiadas del mismo, después de lo cual, un substrato, junto con un material resistente ahora delineado según un modelo, se someten a una influencia modificadora para dicho substrato, dando lugar de ese modo a la modificación del material del substrato en las zonas desnudadas durante el revelado; caracterizado porque dicho polímero no curado está etilénicamente saturado de forma prácticamente total; porque dicho polímero tiene un peso molecular promedio en peso de 103 a 106 aproximadamente; porque dicho grupo epóxido **(Fórmula)** se conecta a la cadena polimérica principal a través de al menos un átomo de ramificación; porque dicho grupo epóxido está inmodificado por esterificación con ácido metacrílico; porque la distribución de pesos moleculares de dicho polímero, definida como Mw/Mn, en donde Mw es el peso molecular promedio en peso y Mn es el peso molecular promedio en número, es numéricamente igual a un valor inferior a 5; porque el polímero contiene cadenas laterales arílicas halogenadas para aumentar la estabilidad durante el procesado; y porque dicha irradiación se selecciona del grupo formado por energía de rayos ultravioletas, energía de ondas de rayos X y radiación con electrones.
ES461397A 1976-08-06 1977-08-05 Procedimiento litografico para la fabricacion de circuitos -impresos e integrados y articulos similares. Expired ES461397A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71239476A 1976-08-06 1976-08-06

Publications (1)

Publication Number Publication Date
ES461397A1 true ES461397A1 (es) 1979-05-16

Family

ID=24861928

Family Applications (1)

Application Number Title Priority Date Filing Date
ES461397A Expired ES461397A1 (es) 1976-08-06 1977-08-05 Procedimiento litografico para la fabricacion de circuitos -impresos e integrados y articulos similares.

Country Status (11)

Country Link
US (1) US4130424A (es)
JP (1) JPS5320771A (es)
BE (1) BE857537A (es)
CA (1) CA1088737A (es)
DE (1) DE2735377C2 (es)
ES (1) ES461397A1 (es)
FR (1) FR2371714A1 (es)
GB (1) GB1588892A (es)
IT (1) IT1086540B (es)
NL (1) NL170775C (es)
SE (1) SE420244B (es)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2352007A1 (fr) * 1976-05-21 1977-12-16 Thomson Csf Resine sensible aux electrons et procede de fabrication de ladite resine
FR2382709A1 (fr) * 1977-03-04 1978-09-29 Thomson Csf Famille de composes comportant un cycle thiirane, reticulables par irradiation photonique
US4279986A (en) * 1977-06-01 1981-07-21 Nippon Electric Co., Ltd. Negative resist and radical scavenger composition with capability of preventing post-irradiation polymerization
CS193322B1 (en) * 1977-11-07 1979-10-31 Jaroslav Kalal Electron resisit
US4208211A (en) * 1978-05-23 1980-06-17 Bell Telephone Laboratories, Incorporated Fabrication based on radiation sensitive resists and related products
US4225664A (en) * 1979-02-22 1980-09-30 Bell Telephone Laboratories, Incorporated X-ray resist containing poly(2,3-dichloro-1-propyl acrylate) and poly(glycidyl methacrylate-co-ethyl acrylate)
JPS5629231A (en) * 1979-08-17 1981-03-24 Hitachi Ltd Radiation sensitive material and pattern forming method
US4262081A (en) * 1979-11-21 1981-04-14 Bell Telephone Laboratories, Incorporated Fabrication based on radiation sensitive resists of halo-alkyl styrene polymers
US4332881A (en) * 1980-07-28 1982-06-01 Bell Telephone Laboratories, Incorporated Resist adhesion in integrated circuit processing
US4430419A (en) * 1981-01-22 1984-02-07 Nippon Telegraph & Telephone Public Corporation Positive resist and method for manufacturing a pattern thereof
DE3109809C2 (de) * 1981-03-13 1986-07-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Resiststrukturen
DE3109728C2 (de) * 1981-03-13 1986-08-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Resiststrukturen
JPS58168047A (ja) * 1982-03-30 1983-10-04 Somar Corp 感光性材料
US4795693A (en) * 1983-07-13 1989-01-03 American Telephone And Telegraph Company, At&T Technologies, Inc. Multilayer circuit board fabrication process
US4628022A (en) * 1983-07-13 1986-12-09 At&T Technologies, Inc. Multilayer circuit board fabrication process and polymer insulator used therein
US4511757A (en) * 1983-07-13 1985-04-16 At&T Technologies, Inc. Circuit board fabrication leading to increased capacity
JPS6071368U (ja) * 1983-10-25 1985-05-20 株式会社新潟工器 消雪用ノズル
GB2163435B (en) * 1984-07-11 1987-07-22 Asahi Chemical Ind Image-forming materials sensitive to high-energy beam
JPS61104988A (ja) * 1984-10-24 1986-05-23 ダウ化工株式会社 蓄熱水槽の構造
US5024969A (en) * 1990-02-23 1991-06-18 Reche John J Hybrid circuit structure fabrication methods using high energy electron beam curing
US5565538A (en) * 1994-09-21 1996-10-15 Great Lakes Chemical Corporation Dibromostyrene-glycidyl(meth)acrylate copolymers
DE19813670C1 (de) 1998-03-27 1999-07-08 Daimler Chrysler Ag Kraftfahrzeug mit einer den Rücksitzbereich vom Vordersitzbereich abtrennenden Trennwand
US7198882B2 (en) * 2001-11-20 2007-04-03 Eastman Kodak Company Adhesion promoting polymeric materials and planographic printing elements containing them
GB0127713D0 (en) * 2001-11-20 2002-01-09 Eastman Kodak Co Adhesion promoting polymeric materials and planographic printing elements containing them
CN101550265B (zh) * 2003-04-02 2014-04-16 日产化学工业株式会社 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物
US9002497B2 (en) * 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1423760A (fr) * 1963-10-25 1966-01-07 Kalle Ag Matériel photosensible pour la réalisation photomécanique de formes d'impression et son procédé de fabrication
DE1572060C3 (de) * 1966-01-07 1974-10-24 Kalle Ag, 6202 Wiesbaden-Biebrich Lichtempfindliche Kopierschicht
US3885060A (en) * 1968-08-23 1975-05-20 Hitachi Ltd Production of insolubilized organic polymers
CA1032392A (en) * 1973-10-23 1978-06-06 Eugene D. Feit High energy radiation curable resist and preparatory process
US3916035A (en) * 1973-11-05 1975-10-28 Texas Instruments Inc Epoxy-polymer electron beam resists
US3931435A (en) * 1974-12-20 1976-01-06 International Business Machines Corporation Electron beam positive resists containing acetate polymers
JPS5299776A (en) * 1976-02-18 1977-08-22 Hitachi Ltd Radiation sensitive high polymeric material

Also Published As

Publication number Publication date
DE2735377A1 (de) 1978-02-09
FR2371714A1 (fr) 1978-06-16
FR2371714B1 (es) 1980-07-11
DE2735377C2 (de) 1983-06-23
SE7708681L (sv) 1978-02-07
GB1588892A (en) 1981-04-29
NL170775B (nl) 1982-07-16
JPS5320771A (en) 1978-02-25
NL170775C (nl) 1982-12-16
SE420244B (sv) 1981-09-21
BE857537A (fr) 1977-12-01
CA1088737A (en) 1980-11-04
IT1086540B (it) 1985-05-28
US4130424A (en) 1978-12-19
NL7708693A (nl) 1978-02-08
JPS5751654B2 (es) 1982-11-02

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