JPS5629231A - Radiation sensitive material and pattern forming method - Google Patents
Radiation sensitive material and pattern forming methodInfo
- Publication number
- JPS5629231A JPS5629231A JP10400679A JP10400679A JPS5629231A JP S5629231 A JPS5629231 A JP S5629231A JP 10400679 A JP10400679 A JP 10400679A JP 10400679 A JP10400679 A JP 10400679A JP S5629231 A JPS5629231 A JP S5629231A
- Authority
- JP
- Japan
- Prior art keywords
- soln
- chlorostyrene
- bromostyrene
- radiation sensitive
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title abstract 3
- 230000005855 radiation Effects 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- SBYMUDUGTIKLCR-UHFFFAOYSA-N 2-chloroethenylbenzene Chemical compound ClC=CC1=CC=CC=C1 SBYMUDUGTIKLCR-UHFFFAOYSA-N 0.000 abstract 4
- YMOONIIMQBGTDU-VOTSOKGWSA-N [(e)-2-bromoethenyl]benzene Chemical compound Br\C=C\C1=CC=CC=C1 YMOONIIMQBGTDU-VOTSOKGWSA-N 0.000 abstract 4
- 229920001577 copolymer Polymers 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 abstract 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001312 dry etching Methods 0.000 abstract 2
- 229920001519 homopolymer Polymers 0.000 abstract 2
- 239000000178 monomer Substances 0.000 abstract 2
- SCRKLKGWEGHTSV-UHFFFAOYSA-N 1,4-dioxane;3-methylbutyl acetate Chemical compound C1COCCO1.CC(C)CCOC(C)=O SCRKLKGWEGHTSV-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
PURPOSE: To enhance the sensitivity, heat stability and dry etching resistance of a radiation sensitive material and improve the adhesion between the substrate and a resist layer by using a homopolymer or a copolymer of chlorostyrene or bromostyrene or a copolymer of chlorostyrene or bromostyrene and a styrene type monomer.
CONSTITUTION: A chlorostyrene or bromostyrene homopolymer having 5W10 millions mol. wt. or a copolymer contg. ≥10mol% chlorostyrene or bromostyrene monomer units and having 5W10 millions mol. wt. is dissolved in chlorobenzene or the like, and this soln. is applied to a substrate such as a silicon wafer and prebacked to form a radiation sensitive film. This film is irradiated with electron beams or the like, and the exposed portion is removed with a dioxane-isoamyl acetate mixed soln. to obtain a resist image. The substrate is then etched with a wet process etching soln. such as a 50% HF soln. or a 40.1% NH4F soln. to obtain a minute pattern. In the wet etching the resist image is not peeled off, and a material having superior suitability to dry etching such as ion milling and plasma etching is obtd.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10400679A JPS5629231A (en) | 1979-08-17 | 1979-08-17 | Radiation sensitive material and pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10400679A JPS5629231A (en) | 1979-08-17 | 1979-08-17 | Radiation sensitive material and pattern forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5629231A true JPS5629231A (en) | 1981-03-24 |
| JPS5746055B2 JPS5746055B2 (en) | 1982-10-01 |
Family
ID=14369173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10400679A Granted JPS5629231A (en) | 1979-08-17 | 1979-08-17 | Radiation sensitive material and pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5629231A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56147144A (en) * | 1980-04-17 | 1981-11-14 | Matsushita Electric Ind Co Ltd | Negative type electron beam resist material |
| JPS58187926A (en) * | 1982-04-28 | 1983-11-02 | Toyo Soda Mfg Co Ltd | Method for developing radiation sensitive negative type resist |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5320771A (en) * | 1976-08-06 | 1978-02-25 | Western Electric Co | Method of manufacturing semiconductor element |
-
1979
- 1979-08-17 JP JP10400679A patent/JPS5629231A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5320771A (en) * | 1976-08-06 | 1978-02-25 | Western Electric Co | Method of manufacturing semiconductor element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56147144A (en) * | 1980-04-17 | 1981-11-14 | Matsushita Electric Ind Co Ltd | Negative type electron beam resist material |
| JPS58187926A (en) * | 1982-04-28 | 1983-11-02 | Toyo Soda Mfg Co Ltd | Method for developing radiation sensitive negative type resist |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5746055B2 (en) | 1982-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57204133A (en) | Manufacture of semiconductor integrated circuit | |
| EP0283265A3 (en) | Silicon containing resists | |
| JPS6468932A (en) | Dry etching | |
| JPS57157241A (en) | Formation of resist material and its pattern | |
| JPS57141642A (en) | Formation of pattern | |
| JPS5461478A (en) | Chromium plate | |
| JPS57202535A (en) | Formation of negative resist pattern | |
| JPS5496363A (en) | Electrode forming method for semiconductor device | |
| JPS57141641A (en) | Formation of positive pattern | |
| JPS57211143A (en) | Formation of micropattern | |
| JPS5642346A (en) | Manufacture of semiconductor device | |
| JPS54107277A (en) | Production of semiconductor device | |
| JPS5674245A (en) | Pattern forming method | |
| JPS51118392A (en) | Manuforcturing process for semiconductor unit | |
| JPS5340282A (en) | Manufacture of semiconductor unit | |
| JPS6431156A (en) | Pattern forming method | |
| JPS5691230A (en) | Resist material | |
| JPS56115534A (en) | Formation of pattern | |
| JPS5496370A (en) | Mask forming method | |
| JPS55146934A (en) | Processing of surface shape of group 3-5 compound semiconductor | |
| JPS53120529A (en) | Forming method of positive type radiation sensitive material layer | |
| JPS5267985A (en) | Manufacturing process of semiconductor unit | |
| JPS5737348A (en) | Electron beam sensitive polymer composition | |
| JPS57131371A (en) | Dry etching method | |
| JPS57152468A (en) | Formation of thin film |