ES480801A1 - Procedimiento para la fabricacion de articulos con capas - protectoras sensibles a la radiacion. - Google Patents

Procedimiento para la fabricacion de articulos con capas - protectoras sensibles a la radiacion.

Info

Publication number
ES480801A1
ES480801A1 ES480801A ES480801A ES480801A1 ES 480801 A1 ES480801 A1 ES 480801A1 ES 480801 A ES480801 A ES 480801A ES 480801 A ES480801 A ES 480801A ES 480801 A1 ES480801 A1 ES 480801A1
Authority
ES
Spain
Prior art keywords
blend
resist
fabrication
article
modifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES480801A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25424783&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES480801(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES480801A1 publication Critical patent/ES480801A1/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

Procedimiento para la fabricación de un articulo que comprende una operación durante la cual el artículo de fabricación comprende una superficie del artículo y una capa de elaboración actínica super yacente, comprendiendo la capara de elaboración una mezcla de fase compatible que comprende material polímero, cuyo procedimiento comprende las fases de: (1) exponer de una forma selectiva partes de la capa de elaboración a radiación actínica de modelación, por lo que se efectúa una diferencia en la facilidad de remocción o eliminación de partes expuestas con relación a partes sin exponer de la capa de elaboración por un agente revelador (2) revelar por tratamiento de la capa de elaboración con el agente revelador para eliminar material de una forma selectiva, produciendo por lo tanto una capa de elaboración modelada, definiéndose el modelo por regiones de la capa de elaboración dentro de la cual el material se elimina de una forma selectiva y (3) tratar el artículo de fabricación con un agentede alteración que altera preferiblemente regiones de la superficie del artículo correspondientes a las regiones de la capa de elaboración modelada, con relación a regiones de la superficie del artículo correspondientes al resto de la capa de elaboración modelada, caracterizado porque la mezcla de fase compatible comprende un "polímero mátriz" determinativo de las características de las regiones restantes de la capa de elaboración modelada junto con un modificador que responde a radiación actínica para efectuar dicha facilidad relativa de remocción o eliminación por reacción de propagación automática iniciada por la radiación.
ES480801A 1978-05-22 1979-05-22 Procedimiento para la fabricacion de articulos con capas - protectoras sensibles a la radiacion. Expired ES480801A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/907,873 US4289845A (en) 1978-05-22 1978-05-22 Fabrication based on radiation sensitive resists and related products

Publications (1)

Publication Number Publication Date
ES480801A1 true ES480801A1 (es) 1980-01-16

Family

ID=25424783

Family Applications (1)

Application Number Title Priority Date Filing Date
ES480801A Expired ES480801A1 (es) 1978-05-22 1979-05-22 Procedimiento para la fabricacion de articulos con capas - protectoras sensibles a la radiacion.

Country Status (7)

Country Link
US (1) US4289845A (es)
EP (1) EP0005775B1 (es)
JP (1) JPS54153578A (es)
AU (1) AU523409B2 (es)
CA (1) CA1140794A (es)
DE (1) DE2966176D1 (es)
ES (1) ES480801A1 (es)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4383026A (en) * 1979-05-31 1983-05-10 Bell Telephone Laboratories, Incorporated Accelerated particle lithographic processing and articles so produced
JPS5633640A (en) * 1979-08-28 1981-04-04 Arai Tokuji Photopolymerizable photosensitive resin composition and photosensitive sheet structure containing layer of such composition
JPS56162744A (en) * 1980-05-19 1981-12-14 Hitachi Ltd Formation of fine pattern
US4476216A (en) * 1981-08-03 1984-10-09 Amdahl Corporation Method for high resolution lithography
JPS5852638A (ja) * 1981-09-24 1983-03-28 Hitachi Ltd 放射線感応性組成物
US4396702A (en) * 1981-11-10 1983-08-02 Rca Corporation Method of forming pattern in positive resist media
US4357369A (en) * 1981-11-10 1982-11-02 Rca Corporation Method of plasma etching a substrate
JPS59152A (ja) * 1982-06-25 1984-01-05 Hitachi Chem Co Ltd 画像形成性樹脂組成物
US4497891A (en) * 1983-10-25 1985-02-05 International Business Machines Corporation Dry-developed, negative working electron resist system
DE3409888A1 (de) * 1984-03-17 1985-09-19 Hoechst Ag, 6230 Frankfurt Lichtempfindliches aufzeichnungsmaterial und dessen verwendung in einem verfahren zum herstellen einer druckform oder einer gedruckten schaltung
DE3563273D1 (en) * 1984-03-19 1988-07-14 Nippon Oil Co Ltd Novel electron beam resist materials
JPS6180246A (ja) * 1984-09-28 1986-04-23 Nec Corp ポジレジスト材料
US4730903A (en) * 1985-01-23 1988-03-15 Semiconductor Energy Laboratory Co., Ltd. Ferroelectric crystal display panel and manufacturing method thereof
US4897336A (en) * 1986-04-11 1990-01-30 Chien James C W Self-developing radiation sensitive resist with amorphous polymer having haloalkyl substitution derived from cycic ether
DE3821585A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
US4835086A (en) * 1988-02-12 1989-05-30 Hoechst Celanese Corporation Polysulfone barrier layer for bi-level photoresists
DE3821584A1 (de) * 1988-06-25 1989-12-28 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
DE3907954A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
DE3907953A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
US5204226A (en) * 1991-03-04 1993-04-20 International Business Machines Corporation Photosensitizers for polysilanes
US5298367A (en) * 1991-03-09 1994-03-29 Basf Aktiengesellschaft Production of micromoldings having a high aspect ratio
US5262392A (en) * 1991-07-15 1993-11-16 Eastman Kodak Company Method for patterning metallo-organic percursor film and method for producing a patterned ceramic film and film products
US5372912A (en) * 1992-12-31 1994-12-13 International Business Machines Corporation Radiation-sensitive resist composition and process for its use
EP0698825A1 (en) * 1994-07-29 1996-02-28 AT&T Corp. An energy sensitive resist material and a process for device fabrication using the resist material
US6576547B2 (en) 1998-03-05 2003-06-10 Micron Technology, Inc. Residue-free contact openings and methods for fabricating same
US6436605B1 (en) 1999-07-12 2002-08-20 International Business Machines Corporation Plasma resistant composition and use thereof
US6410453B1 (en) * 1999-09-02 2002-06-25 Micron Technology, Inc. Method of processing a substrate
CA2513648A1 (en) * 2003-02-05 2004-08-26 Dow Global Technologies Inc. Rubber modified polymers from vinyl aromatic monomers
US7765675B2 (en) * 2005-09-01 2010-08-03 Hitachi Global Storage Technologies Netherlands B.V. CPP read sensors having constrained current paths made of lithographically-defined conductive vias and methods of making the same
US7550249B2 (en) * 2006-03-10 2009-06-23 Az Electronic Materials Usa Corp. Base soluble polymers for photoresist compositions
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US7759046B2 (en) * 2006-12-20 2010-07-20 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8026040B2 (en) 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
KR101523393B1 (ko) * 2007-02-27 2015-05-27 이엠디 퍼포먼스 머티리얼스 코프. 규소를 주성분으로 하는 반사 방지 코팅 조성물
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US11060416B2 (en) 2019-01-31 2021-07-13 Transportation Ip Holdings, Llc Systems for a turbocharger

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE594253A (es) * 1959-08-19
BE605776A (es) * 1960-09-26
US3255006A (en) * 1963-03-04 1966-06-07 Purex Corp Ltd Photosensitive masking for chemical etching
US3657177A (en) * 1970-06-25 1972-04-18 Du Pont Wire enamel of an aromatic polysulfone resin and a heat reactive condensate
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
US3936557A (en) * 1971-05-18 1976-02-03 American Can Company Epoxide blend for polymerizable coating compositions and process
SE391405B (sv) * 1972-05-01 1977-02-14 Western Electric Co Forfarande for astadkommande av resistmonster pa ett substrat
US3852771A (en) * 1973-02-12 1974-12-03 Rca Corp Electron beam recording process
US3950173A (en) * 1973-02-12 1976-04-13 Rca Corporation Electron beam recording article with o-quinone diazide compound
US3893127A (en) * 1973-09-27 1975-07-01 Rca Corp Electron beam recording media
US3996393A (en) * 1974-03-25 1976-12-07 International Business Machines Corporation Positive polymeric electron beam resists of very great sensitivity
US3963491A (en) * 1974-06-27 1976-06-15 Xerox Corporation Imaging method
US3916036A (en) * 1974-09-26 1975-10-28 Ibm Sensitized decomposition of polysulfone resists
US4011351A (en) * 1975-01-29 1977-03-08 International Business Machines Corporation Preparation of resist image with methacrylate polymers
US4005437A (en) * 1975-04-18 1977-01-25 Rca Corporation Method of recording information in which the electron beam sensitive material contains 4,4'-bis(3-diazo-3-4-oxo-1-naphthalene sulfonyloxy)benzil
US4103064A (en) * 1976-01-09 1978-07-25 Dios, Inc. Microdevice substrate and method for making micropattern devices
US4153741A (en) * 1976-07-30 1979-05-08 Rca Corporation Method for forming a surface relief pattern in a poly(olefin sulfone) layer
US4045318A (en) * 1976-07-30 1977-08-30 Rca Corporation Method of transferring a surface relief pattern from a poly(olefin sulfone) layer to a metal layer
US4097618A (en) * 1977-03-09 1978-06-27 Rca Corporation Method of transferring a surface relief pattern from a poly(1-methyl-1-cyclopropene sulfone) layer to a non-metallic inorganic layer

Also Published As

Publication number Publication date
AU523409B2 (en) 1982-07-29
EP0005775A1 (en) 1979-12-12
AU4709679A (en) 1979-11-29
US4289845A (en) 1981-09-15
JPS54153578A (en) 1979-12-03
CA1140794A (en) 1983-02-08
DE2966176D1 (en) 1983-10-27
EP0005775B1 (en) 1983-09-21

Similar Documents

Publication Publication Date Title
ES480801A1 (es) Procedimiento para la fabricacion de articulos con capas - protectoras sensibles a la radiacion.
JP3158710B2 (ja) 化学増幅レジストパターンの形成方法
ES480851A1 (es) Procedimiento de fabricacion de circuitos integrados.
JPS6435433A (en) Radiation sensitive mixture for photosensitive layer forming material
GB1459988A (en) Resist mask
US3652273A (en) Process using polyvinyl butral topcoat on photoresist layer
KR940006195A (ko) 위상쉬프트층을 갖는 포토마스크의 제조방법
GB1459170A (en) Positive resist mask
US3650754A (en) Photoresist compositions containing limed rosin and photoactinator
EP0152114A3 (en) Method for making a dry planographic printing plate
JPS5595324A (en) Manufacturing method of semiconductor device
JPS5518673A (en) Ionized radiation sensitive negative type resist
GB843544A (en) Light sensitive photomechanical resist compositions
US1911955A (en) Phototransfer process
EP0318956A3 (en) Positive-working photoresist compositions and use thereof for forming positive-tone relief images
JPS5558243A (en) Highly sensitive positive resist composition
JPS57183030A (en) Manufacture of semiconductor device
ES480802A1 (es) Procedimiento de fabricacion de articulos con capas protec- toras sensibles a la radiacion.
JPS5616129A (en) Pattern forming method
JPS6473616A (en) Manufacture of semiconductor device
JPS5461931A (en) Forming method of photo resist patterns
FR2389156A1 (fr) Substance sensible aux rayons x pour photogravure
JPS56114942A (en) High energy beam sensitive resist material and its using method
JPS5655044A (en) Formation of resist pattern
JPS5639536A (en) Ionizing radiation sensitive resist