ES487064A1 - Perfeccionamientos en dispositivos semiconductores compues- tos para circuitos integrados de alta tensionp - Google Patents

Perfeccionamientos en dispositivos semiconductores compues- tos para circuitos integrados de alta tensionp

Info

Publication number
ES487064A1
ES487064A1 ES487064A ES487064A ES487064A1 ES 487064 A1 ES487064 A1 ES 487064A1 ES 487064 A ES487064 A ES 487064A ES 487064 A ES487064 A ES 487064A ES 487064 A1 ES487064 A1 ES 487064A1
Authority
ES
Spain
Prior art keywords
high voltage
dielectrically
integrated circuit
semiconductor material
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES487064A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES487064A1 publication Critical patent/ES487064A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Bipolar Transistors (AREA)
  • Gyroscopes (AREA)
  • Lasers (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

Perfeccionamientos en dispositivos semiconductores compuestos para circuitos integrados de alta tensión, del tipo que tiene una pluralidad de cavidad de material semiconductor monocristalino de un primer tipo de conductividad, dielectricamente aisladas entre sí por una capa de material aislante subyacente al fondo y lados de las mismas, estando soportadas las cavidades en una capa de material semiconductor policristalino y teniendo una superficie en un plano común de dicho dispositivo; caracterizados porque (a) el material semiconductor de dichas cavidades es de resistividad relativamente elevada y de una distribución de impurezas sustancialmente uniforme; (b) se dispone una primera cavidad que contiene un transistor pnp y un segunda cavidad que contiene un transistor npn; y © cada uno de dichos transistores consiste solamente en zonas tipo de conductividad adyacentes a la superficie que constituye respectivamente las zonas emisoras, base y colectora.
ES487064A 1978-12-20 1979-12-19 Perfeccionamientos en dispositivos semiconductores compues- tos para circuitos integrados de alta tensionp Expired ES487064A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/971,632 US4232328A (en) 1978-12-20 1978-12-20 Dielectrically-isolated integrated circuit complementary transistors for high voltage use

Publications (1)

Publication Number Publication Date
ES487064A1 true ES487064A1 (es) 1980-09-16

Family

ID=25518630

Family Applications (1)

Application Number Title Priority Date Filing Date
ES487064A Expired ES487064A1 (es) 1978-12-20 1979-12-19 Perfeccionamientos en dispositivos semiconductores compues- tos para circuitos integrados de alta tensionp

Country Status (12)

Country Link
US (1) US4232328A (es)
JP (1) JPH0413863B2 (es)
BE (1) BE880726A (es)
CA (1) CA1126875A (es)
DE (1) DE2953394T1 (es)
ES (1) ES487064A1 (es)
FR (1) FR2445027A1 (es)
GB (1) GB2049281A (es)
IT (1) IT1126601B (es)
NL (1) NL7920182A (es)
SE (1) SE424028B (es)
WO (1) WO1980001335A1 (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1177148A (en) * 1981-10-06 1984-10-30 Robert J. Mcintyre Avalanche photodiode array
US4631570A (en) * 1984-07-03 1986-12-23 Motorola, Inc. Integrated circuit having buried oxide isolation and low resistivity substrate for power supply interconnection
US5448100A (en) * 1985-02-19 1995-09-05 Harris Corporation Breakdown diode structure
JPH01123417A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
US5416354A (en) * 1989-01-06 1995-05-16 Unitrode Corporation Inverted epitaxial process semiconductor devices
ES2152919T3 (es) * 1990-01-08 2001-02-16 Harris Corp Procedimiento de utilizacion de un dispositivo semiconductor que comprende un sustrato que tiene un islote semiconductor dielectricamente aislado.
US6375741B2 (en) 1991-03-06 2002-04-23 Timothy J. Reardon Semiconductor processing spray coating apparatus
JP2654268B2 (ja) * 1991-05-13 1997-09-17 株式会社東芝 半導体装置の使用方法
US5744851A (en) * 1992-01-27 1998-04-28 Harris Corporation Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions
GB2344689A (en) * 1998-12-07 2000-06-14 Ericsson Telefon Ab L M Analogue switch
AU2001292884A1 (en) * 2000-09-20 2002-04-02 Molecular Reflections Microfabricated ultrasound array for use as resonant sensors

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL91725C (es) * 1952-12-16
US3850707A (en) * 1964-09-09 1974-11-26 Honeywell Inc Semiconductors
US3412295A (en) * 1965-10-19 1968-11-19 Sprague Electric Co Monolithic structure with three-region complementary transistors
DE1816081A1 (de) * 1968-12-20 1970-06-25 Siemens Ag Integrierte Halbleiterschaltungsanordnung
GB1258382A (es) * 1969-01-16 1971-12-30
US3628064A (en) * 1969-03-13 1971-12-14 Signetics Corp Voltage to frequency converter with constant current sources
US3953255A (en) * 1971-12-06 1976-04-27 Harris Corporation Fabrication of matched complementary transistors in integrated circuits
US3865649A (en) * 1972-10-16 1975-02-11 Harris Intertype Corp Fabrication of MOS devices and complementary bipolar transistor devices in a monolithic substrate
US3944447A (en) * 1973-03-12 1976-03-16 Ibm Corporation Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation
US3895392A (en) * 1973-04-05 1975-07-15 Signetics Corp Bipolar transistor structure having ion implanted region and method
US4042949A (en) * 1974-05-08 1977-08-16 Motorola, Inc. Semiconductor devices
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
NL7408110A (nl) * 1974-06-18 1975-12-22 Philips Nv Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan.
US3990102A (en) * 1974-06-28 1976-11-02 Hitachi, Ltd. Semiconductor integrated circuits and method of manufacturing the same
US4086610A (en) * 1974-06-28 1978-04-25 Motorola, Inc. High reliability epi-base radiation hardened power transistor

Also Published As

Publication number Publication date
DE2953394C2 (es) 1993-01-07
JPH0413863B2 (es) 1992-03-11
US4232328A (en) 1980-11-04
SE424028B (sv) 1982-06-21
FR2445027A1 (fr) 1980-07-18
FR2445027B1 (es) 1984-03-09
GB2049281A (en) 1980-12-17
GB2049281B (es)
BE880726A (fr) 1980-04-16
CA1126875A (en) 1982-06-29
IT7928204A0 (it) 1979-12-19
SE8005704L (sv) 1980-08-13
DE2953394T1 (de) 1981-01-08
JPS55501040A (es) 1980-11-27
WO1980001335A1 (en) 1980-06-26
IT1126601B (it) 1986-05-21
NL7920182A (nl) 1980-10-31

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