ES514071A0 - Procedimiento de pasivacion de dispositivos semiconductores. - Google Patents
Procedimiento de pasivacion de dispositivos semiconductores.Info
- Publication number
- ES514071A0 ES514071A0 ES514071A ES514071A ES514071A0 ES 514071 A0 ES514071 A0 ES 514071A0 ES 514071 A ES514071 A ES 514071A ES 514071 A ES514071 A ES 514071A ES 514071 A0 ES514071 A0 ES 514071A0
- Authority
- ES
- Spain
- Prior art keywords
- semiconducting devices
- passivation procedure
- passivation
- procedure
- semiconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8122176 | 1981-07-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES8305534A1 ES8305534A1 (es) | 1983-04-01 |
| ES514071A0 true ES514071A0 (es) | 1983-04-01 |
Family
ID=10523336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES514071A Granted ES514071A0 (es) | 1981-07-17 | 1982-07-16 | Procedimiento de pasivacion de dispositivos semiconductores. |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0070692A3 (es) |
| JP (1) | JPS58121673A (es) |
| ES (1) | ES514071A0 (es) |
| GB (1) | GB2102202A (es) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU570309B2 (en) * | 1984-03-26 | 1988-03-10 | Unisearch Limited | Buried contact solar cell |
| FR2579023B1 (fr) * | 1985-03-12 | 1988-06-24 | Silicium Semiconducteur Ssc | Composant semiconducteur a tenue en tension amelioree par sillons peripheriques multiples |
| US4748103A (en) * | 1986-03-21 | 1988-05-31 | Advanced Power Technology | Mask-surrogate semiconductor process employing dopant protective region |
| US4962057A (en) * | 1988-10-13 | 1990-10-09 | Xerox Corporation | Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth |
| DE4114660C2 (de) * | 1991-05-06 | 1997-09-18 | Telefunken Microelectron | Verfahren zur Herstellung glaspassivierter Halbleiterbauelemente |
| EP1601010A3 (fr) | 2004-05-26 | 2009-01-21 | St Microelectronics S.A. | Formation de tranchées obliques |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3559006A (en) * | 1968-04-11 | 1971-01-26 | Tokyo Shibaura Electric Co | Semiconductor device with an inclined inwardly extending groove |
| US4019248A (en) * | 1974-06-04 | 1977-04-26 | Texas Instruments Incorporated | High voltage junction semiconductor device fabrication |
-
1982
- 1982-07-12 GB GB08220193A patent/GB2102202A/en not_active Withdrawn
- 1982-07-15 EP EP82303718A patent/EP0070692A3/en not_active Withdrawn
- 1982-07-16 ES ES514071A patent/ES514071A0/es active Granted
- 1982-07-16 JP JP57123111A patent/JPS58121673A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2102202A (en) | 1983-01-26 |
| EP0070692A3 (en) | 1984-11-07 |
| EP0070692A2 (en) | 1983-01-26 |
| ES8305534A1 (es) | 1983-04-01 |
| JPS58121673A (ja) | 1983-07-20 |
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