ES557586A0 - Perfeccionamientos en un dispositivo transistor mos - Google Patents
Perfeccionamientos en un dispositivo transistor mosInfo
- Publication number
- ES557586A0 ES557586A0 ES557586A ES557586A ES557586A0 ES 557586 A0 ES557586 A0 ES 557586A0 ES 557586 A ES557586 A ES 557586A ES 557586 A ES557586 A ES 557586A ES 557586 A0 ES557586 A0 ES 557586A0
- Authority
- ES
- Spain
- Prior art keywords
- mos transistor
- transistor device
- mos
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
- H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67530584A | 1984-11-27 | 1984-11-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES557586A0 true ES557586A0 (es) | 1987-12-01 |
| ES8800789A1 ES8800789A1 (es) | 1987-12-01 |
Family
ID=24709896
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES549295A Expired ES8800512A1 (es) | 1984-11-27 | 1985-11-26 | Procedimiento para hacer un dispositivo transistor mos. |
| ES557586A Expired ES8800789A1 (es) | 1984-11-27 | 1987-06-11 | Perfeccionamientos en un dispositivo transistor mos |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES549295A Expired ES8800512A1 (es) | 1984-11-27 | 1985-11-26 | Procedimiento para hacer un dispositivo transistor mos. |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0203146B1 (es) |
| JP (1) | JPH0626251B2 (es) |
| KR (1) | KR940005451B1 (es) |
| CA (1) | CA1236932A (es) |
| DE (1) | DE3570557D1 (es) |
| ES (2) | ES8800512A1 (es) |
| IE (1) | IE56967B1 (es) |
| WO (1) | WO1986003341A1 (es) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01151268A (ja) * | 1987-12-08 | 1989-06-14 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP2661792B2 (ja) * | 1989-05-12 | 1997-10-08 | 沖電気工業株式会社 | 電界効果トランジスタの製造方法 |
| EP0472726A4 (en) * | 1989-05-12 | 1992-06-03 | Oki Electric Industry Company, Limited | Field effect transistor |
| JP2994670B2 (ja) | 1989-12-02 | 1999-12-27 | 忠弘 大見 | 半導体装置及びその製造方法 |
| JP2790362B2 (ja) * | 1990-06-04 | 1998-08-27 | キヤノン株式会社 | 半導体装置 |
| FR2720191B1 (fr) * | 1994-05-18 | 1996-10-18 | Michel Haond | Transistor à effet de champ à grille isolée, et procédé de fabrication correspondant. |
| DE19743342C2 (de) * | 1997-09-30 | 2002-02-28 | Infineon Technologies Ag | Feldeffekttransistor hoher Packungsdichte und Verfahren zu seiner Herstellung |
| FR2791810B1 (fr) * | 1999-03-31 | 2001-06-22 | France Telecom | Procede de fabrication d'une heterostructure planaire |
| EP1091413A3 (en) * | 1999-10-06 | 2005-01-12 | Lsi Logic Corporation | Fully-depleted, fully-inverted, short-length and vertical channel, dual-gate, cmos fet |
| US7282401B2 (en) | 2005-07-08 | 2007-10-16 | Micron Technology, Inc. | Method and apparatus for a self-aligned recessed access device (RAD) transistor gate |
| US7867851B2 (en) | 2005-08-30 | 2011-01-11 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
| US7700441B2 (en) * | 2006-02-02 | 2010-04-20 | Micron Technology, Inc. | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates |
| US7602001B2 (en) | 2006-07-17 | 2009-10-13 | Micron Technology, Inc. | Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells |
| US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
| JP5258230B2 (ja) | 2007-08-28 | 2013-08-07 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS506287A (es) * | 1973-05-18 | 1975-01-22 | ||
| JPS5499574A (en) * | 1978-01-24 | 1979-08-06 | Pioneer Electronic Corp | Method of fabricating field effect transistor |
| US4296429A (en) * | 1978-08-09 | 1981-10-20 | Harris Corporation | VMOS Transistor and method of fabrication |
| US4407058A (en) * | 1981-05-22 | 1983-10-04 | International Business Machines Corporation | Method of making dense vertical FET's |
| US4419811A (en) * | 1982-04-26 | 1983-12-13 | Acrian, Inc. | Method of fabricating mesa MOSFET using overhang mask |
| US4503598A (en) * | 1982-05-20 | 1985-03-12 | Fairchild Camera & Instrument Corporation | Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques |
-
1985
- 1985-11-13 KR KR1019860700502A patent/KR940005451B1/ko not_active Expired - Lifetime
- 1985-11-13 WO PCT/US1985/002244 patent/WO1986003341A1/en not_active Ceased
- 1985-11-13 JP JP60505312A patent/JPH0626251B2/ja not_active Expired - Lifetime
- 1985-11-13 EP EP85905997A patent/EP0203146B1/en not_active Expired
- 1985-11-13 DE DE8585905997T patent/DE3570557D1/de not_active Expired
- 1985-11-26 CA CA000496248A patent/CA1236932A/en not_active Expired
- 1985-11-26 IE IE2964/85A patent/IE56967B1/en not_active IP Right Cessation
- 1985-11-26 ES ES549295A patent/ES8800512A1/es not_active Expired
-
1987
- 1987-06-11 ES ES557586A patent/ES8800789A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| KR880700473A (ko) | 1988-03-15 |
| JPS62500831A (ja) | 1987-04-02 |
| WO1986003341A1 (en) | 1986-06-05 |
| IE852964L (en) | 1986-05-27 |
| DE3570557D1 (en) | 1989-06-29 |
| CA1236932A (en) | 1988-05-17 |
| ES549295A0 (es) | 1987-11-16 |
| IE56967B1 (en) | 1992-02-12 |
| KR940005451B1 (ko) | 1994-06-18 |
| ES8800789A1 (es) | 1987-12-01 |
| ES8800512A1 (es) | 1987-11-16 |
| JPH0626251B2 (ja) | 1994-04-06 |
| EP0203146A1 (en) | 1986-12-03 |
| EP0203146B1 (en) | 1989-05-24 |
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