ES8603113A1 - Un circuito integrado fotodetector - Google Patents

Un circuito integrado fotodetector

Info

Publication number
ES8603113A1
ES8603113A1 ES535239A ES535239A ES8603113A1 ES 8603113 A1 ES8603113 A1 ES 8603113A1 ES 535239 A ES535239 A ES 535239A ES 535239 A ES535239 A ES 535239A ES 8603113 A1 ES8603113 A1 ES 8603113A1
Authority
ES
Spain
Prior art keywords
layer
composition
photodetector circuit
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES535239A
Other languages
English (en)
Other versions
ES535239A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Spain SA
Original Assignee
Alcatel Espana SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Espana SA filed Critical Alcatel Espana SA
Publication of ES8603113A1 publication Critical patent/ES8603113A1/es
Publication of ES535239A0 publication Critical patent/ES535239A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

CIRCUITO INTEGRADO FOTODETECTOR QUE INCORPORA UN DIODO PIN Y UN TRANSISTOR DE EFECTO DE CAMPO. CONSTA DE UN SUSTRATO DE FOSFURO DE INDIO SEMIAISLANTE (1); DE UNA PRIMERA CAPA (3) DE ESPESOR APROXIMADO DE 1 MICRON, LA CUAL ESTA FORMADA POR GA, IN Y AS; DE UNA SEGUNDA CAPA (4) CUYO ESPESEOR Y COMPOSICION DEPENDEN DEL TIPO DE TRANSISTOR DE EFECTO DE CAMPO A CONSTRUIR; DE UNA TERCERA CAPA (5) QUE ES DE TIPO P, LA CUAL COOPERA CON LA SEGUNDA CAPA (4) PARA FORMAR UNA UNION P-N TANTO EN EL FET COMO EN EL DIODO PIN; Y DE DOS CAPAS MAS (6, 7) QUE RECUBREN A LA TERCERA CAPA (5), LAS CUALES TIENEN UNA COMPOSICION QUE DEPENDE DE LA COMPOSICION DE LA CAPA TERCERA (5).
ES535239A 1983-08-18 1984-08-17 Un circuito integrado fotodetector Granted ES535239A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08322236A GB2145279B (en) 1983-08-18 1983-08-18 Photodetector integrated circuit

Publications (2)

Publication Number Publication Date
ES8603113A1 true ES8603113A1 (es) 1985-11-16
ES535239A0 ES535239A0 (es) 1985-11-16

Family

ID=10547489

Family Applications (1)

Application Number Title Priority Date Filing Date
ES535239A Granted ES535239A0 (es) 1983-08-18 1984-08-17 Un circuito integrado fotodetector

Country Status (6)

Country Link
US (1) US4636829A (es)
EP (1) EP0133709A3 (es)
JP (1) JPS60106183A (es)
KR (1) KR850002178A (es)
ES (1) ES535239A0 (es)
GB (1) GB2145279B (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2078863A1 (es) * 1993-09-10 1995-12-16 Telefonica Nacional Espana Co Cabeza optica fotodetectora.

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145558A (en) * 1983-08-23 1985-03-27 Standard Telephones Cables Ltd Field effect transistor
JPS6161457A (ja) * 1984-09-01 1986-03-29 Canon Inc 光センサおよびその製造方法
US5268309A (en) * 1984-09-01 1993-12-07 Canon Kabushiki Kaisha Method for manufacturing a photosensor
US4771325A (en) * 1985-02-11 1988-09-13 American Telephone & Telegraph Co., At&T Bell Laboratories Integrated photodetector-amplifier device
US4745446A (en) * 1985-02-11 1988-05-17 American Telephone And Telegraph Company, At&T Bell Laboratories Photodetector and amplifier integration
GB2172742B (en) * 1985-03-21 1988-08-24 Stc Plc Photoconductor
JPS62159477A (ja) * 1986-01-08 1987-07-15 Fujitsu Ltd 光半導体装置
JPS62190779A (ja) * 1986-02-18 1987-08-20 Nippon Telegr & Teleph Corp <Ntt> 集積形受光器
EP0233725B1 (en) * 1986-02-18 1995-04-19 Kabushiki Kaisha Toshiba Opto-Electronic Device and Method for its Manufacture
DE3706252A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleiterfotosensor
DE3606471A1 (de) * 1986-02-28 1987-09-03 Standard Elektrik Lorenz Ag Monolithisch integriert aufgebaute eingangsstufe eines optischen empfaengers
US4833512A (en) * 1986-04-11 1989-05-23 Itt Gallium Arsenide Technology Center, A Division Of Itt Corporation Heterojunction photo-detector with transparent gate
JPS6351681A (ja) * 1986-08-20 1988-03-04 Agency Of Ind Science & Technol 半導体装置
DE3629681A1 (de) * 1986-09-01 1988-03-10 Licentia Gmbh Photoempfaenger
DE3629685C2 (de) * 1986-09-01 2000-08-10 Daimler Chrysler Ag Photoempfänger
DE3712864C2 (de) * 1986-09-01 2001-05-17 Daimler Chrysler Ag Monolithisch integrierter Photoempfänger
DE3629684A1 (de) * 1986-09-01 1988-03-10 Licentia Gmbh Photoempfaenger
DE3644410A1 (de) * 1986-12-24 1988-07-07 Licentia Gmbh Photoempfaenger
DE3644408A1 (de) * 1986-12-24 1988-07-07 Licentia Gmbh Photoempfaenger
DE3709301C2 (de) * 1987-03-20 2001-12-06 Daimler Chrysler Ag Monolithisch integrierte Senderanordnung
DE3711617A1 (de) * 1987-04-07 1988-10-27 Siemens Ag Monolithisch integrierte wellenleiter-fotodioden-fet-kombination
DE3903699A1 (de) * 1988-02-08 1989-08-17 Ricoh Kk Bildsensor
US5170228A (en) * 1988-02-29 1992-12-08 Sumitomo Electric Industries, Ltd. Opto-electronic integrated circuit
CA1301897C (en) * 1988-02-29 1992-05-26 Goro Sasaki Method for producing an opto-electronic integrated circuit
FR2634066A1 (fr) * 1988-07-05 1990-01-12 Thomson Csf Dispositif optoelectronique realise en optique integree et procede de realisation
EP0400399A3 (de) * 1989-05-31 1991-05-29 Siemens Aktiengesellschaft Monolithisch integrierte Photodiode-FET-Kombination
EP0405214A3 (en) * 1989-06-27 1991-06-05 Siemens Aktiengesellschaft Pin-fet combination with buried p-type layer
US6407440B1 (en) * 2000-02-25 2002-06-18 Micron Technology Inc. Pixel cell with high storage capacitance for a CMOS imager
US6583469B1 (en) * 2002-01-28 2003-06-24 International Business Machines Corporation Self-aligned dog-bone structure for FinFET applications and methods to fabricate the same
JP4453561B2 (ja) * 2005-01-26 2010-04-21 パナソニック電工株式会社 タイマスイッチ
KR101371401B1 (ko) * 2010-11-03 2014-03-10 한국전자통신연구원 애벌런치 광다이오드 및 그 형성방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2048181A1 (de) * 1970-09-30 1972-04-06 Siemens Ag Fototransistor
EP0067566A3 (en) * 1981-06-13 1985-08-07 Plessey Overseas Limited Integrated light detection or generation means and amplifying means
DE3135462A1 (de) * 1981-09-08 1983-09-01 AEG-Telefunken Nachrichtentechnik GmbH, 7150 Backnang Monolithische eingangsstufe eines optischen empfaengers
GB2109991B (en) * 1981-11-17 1985-05-15 Standard Telephones Cables Ltd Photodetector
US4442445A (en) * 1981-11-23 1984-04-10 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier gate field effect transistor
US4517581A (en) * 1982-11-16 1985-05-14 Itt Industries, Inc. Photodetector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2078863A1 (es) * 1993-09-10 1995-12-16 Telefonica Nacional Espana Co Cabeza optica fotodetectora.

Also Published As

Publication number Publication date
GB2145279A (en) 1985-03-20
GB2145279B (en) 1987-10-21
JPS60106183A (ja) 1985-06-11
ES535239A0 (es) 1985-11-16
KR850002178A (ko) 1985-05-06
EP0133709A3 (en) 1985-07-10
US4636829A (en) 1987-01-13
GB8322236D0 (en) 1983-09-21
EP0133709A2 (en) 1985-03-06

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