JPS5376679A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5376679A
JPS5376679A JP15242876A JP15242876A JPS5376679A JP S5376679 A JPS5376679 A JP S5376679A JP 15242876 A JP15242876 A JP 15242876A JP 15242876 A JP15242876 A JP 15242876A JP S5376679 A JPS5376679 A JP S5376679A
Authority
JP
Japan
Prior art keywords
semiconductor device
diodes
substrate
channel region
suppress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15242876A
Other languages
Japanese (ja)
Inventor
Yasutaka Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15242876A priority Critical patent/JPS5376679A/en
Publication of JPS5376679A publication Critical patent/JPS5376679A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To suppress the current flowing in diodes by providing a gate protecting circuit including the thin-film resistor formed on a substrate, the diodes of the P channel region formed in the substrate and the diode of an N channel region.
JP15242876A 1976-12-17 1976-12-17 Semiconductor device Pending JPS5376679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15242876A JPS5376679A (en) 1976-12-17 1976-12-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15242876A JPS5376679A (en) 1976-12-17 1976-12-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5376679A true JPS5376679A (en) 1978-07-07

Family

ID=15540295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15242876A Pending JPS5376679A (en) 1976-12-17 1976-12-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5376679A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5774899A (en) * 1980-06-30 1982-05-11 Inmos Corp Mos memory chip with redundancy
JPS57130461A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor memory storage
DE3243276A1 (en) 1982-01-11 1983-07-21 Nissan Motor Co., Ltd., Yokohama, Kanagawa SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE PROTECTIVE CIRCUIT
JPS58159369A (en) * 1982-03-18 1983-09-21 Nec Corp Complementary mos integrated circuit device
US4514646A (en) * 1980-08-20 1985-04-30 Hitachi, Ltd. Semiconductor integrated circuit device including a protective resistor arrangement for output transistors
JPH054728A (en) * 1991-03-20 1993-01-14 Tokyo Electric Co Ltd Sheet storage device
EP0664564A1 (en) * 1994-01-25 1995-07-26 STMicroelectronics S.A. Integrated circuit including a protection against electrostatic discharges
JP2019195082A (en) * 2010-06-30 2019-11-07 キヤノン株式会社 Solid-state imaging device and method for manufacturing solid-state imaging device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5774899A (en) * 1980-06-30 1982-05-11 Inmos Corp Mos memory chip with redundancy
US4514646A (en) * 1980-08-20 1985-04-30 Hitachi, Ltd. Semiconductor integrated circuit device including a protective resistor arrangement for output transistors
JPS57130461A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor memory storage
DE3243276A1 (en) 1982-01-11 1983-07-21 Nissan Motor Co., Ltd., Yokohama, Kanagawa SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE PROTECTIVE CIRCUIT
JPS58159369A (en) * 1982-03-18 1983-09-21 Nec Corp Complementary mos integrated circuit device
JPH054728A (en) * 1991-03-20 1993-01-14 Tokyo Electric Co Ltd Sheet storage device
EP0664564A1 (en) * 1994-01-25 1995-07-26 STMicroelectronics S.A. Integrated circuit including a protection against electrostatic discharges
FR2715504A1 (en) * 1994-01-25 1995-07-28 Sgs Thomson Microelectronics Integrated circuit incorporating protection against electrostatic discharge.
JP2019195082A (en) * 2010-06-30 2019-11-07 キヤノン株式会社 Solid-state imaging device and method for manufacturing solid-state imaging device

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