ES8604368A1 - Procedimiento para formar un dispositivo que incluye una re gion de un oxido de silicio - Google Patents

Procedimiento para formar un dispositivo que incluye una re gion de un oxido de silicio

Info

Publication number
ES8604368A1
ES8604368A1 ES545000A ES545000A ES8604368A1 ES 8604368 A1 ES8604368 A1 ES 8604368A1 ES 545000 A ES545000 A ES 545000A ES 545000 A ES545000 A ES 545000A ES 8604368 A1 ES8604368 A1 ES 8604368A1
Authority
ES
Spain
Prior art keywords
substrate
gas
materials
silicon oxide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES545000A
Other languages
English (en)
Other versions
ES545000A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of ES545000A0 publication Critical patent/ES545000A0/es
Publication of ES8604368A1 publication Critical patent/ES8604368A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PROCEDIMIENTO PARA FORMAR UN DISPOSITIVO QUE INCLUYE UNA REGION DE UN OXIDO DE SILICIO. COMPRENDE LAS ETAPAS DE SOMETER UN SUSTRATO, QUE INCLUYE UN MATERIAL VOLUMINOSO TAL COMO UN CUERPO PIROELECTRICO COMO LINBO3 O UN CUERPO SEMICONDUCTOR COMO SILICIO, SIENDO EL CASO QUE ESTEN PRESENTES VARIAS REGIONES DE MATERIALES TAL COMO MATERIALES DIELECTRICOS, MATERIALES METALICOS Y/O MATERIALES SEMICONDUCTORES, A UN AMBIENTE EN EL CUAL SE INTRODUCE UN GAS; E INDUCIR UNA REACCION QUE CONDUCE A LA DEPOSICION DEL OXIDO DE SILICIO SOBRE EL SUSTRATO, COMPRENDIENDO EL GAS UNA COMPOSICION ELEGIDA DEL GRUPO CONSISTENTE EN DIACETOXIDITERC-BUTOXISILANO (DADBS), DIACETOXIDIISOPROPOXISILANO (DADIS) Y TRITERC-BUTOXIETOXISILANO (TBES); DONDE LA REACCION ES INDUCIDA POR LA PRODUCCION DE UNA DESCARGA EN DICHO GAS Y POR CALENTAMIENTO DEL SUSTRATO A TEMPERATURA DE 600JC.
ES545000A 1984-07-11 1985-07-09 Procedimiento para formar un dispositivo que incluye una re gion de un oxido de silicio Expired ES8604368A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62995084A 1984-07-11 1984-07-11

Publications (2)

Publication Number Publication Date
ES545000A0 ES545000A0 (es) 1986-01-16
ES8604368A1 true ES8604368A1 (es) 1986-01-16

Family

ID=24525137

Family Applications (1)

Application Number Title Priority Date Filing Date
ES545000A Expired ES8604368A1 (es) 1984-07-11 1985-07-09 Procedimiento para formar un dispositivo que incluye una re gion de un oxido de silicio

Country Status (6)

Country Link
EP (1) EP0187826B1 (es)
JP (1) JPH07120651B2 (es)
CA (1) CA1240215A (es)
DE (1) DE3569065D1 (es)
ES (1) ES8604368A1 (es)
WO (1) WO1986000753A1 (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0404101B1 (en) * 1989-06-22 1996-05-01 Watkins-Johnson Company Method for depositing silicon dioxide film and product
DE69231390D1 (de) * 1991-06-10 2000-10-05 At & T Corp Anisotropische Ablagerung von Dielektrika
DE19545093A1 (de) 1995-12-04 1997-06-05 Basf Ag Dialkoxydiformoxysilane, ein Verfahren zu ihrer Herstellung sowie ihre Verwendung
CA2920646A1 (en) 2016-02-12 2017-08-12 Seastar Chemicals Inc. Organometallic compound and method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2536013A1 (de) * 1975-08-13 1977-03-03 Bosch Gmbh Robert Verfahren zur verbesserung der haltbarkeit von aus siliciumoxiden bestehenden schutzschichten
US4297150A (en) * 1979-07-07 1981-10-27 The British Petroleum Company Limited Protective metal oxide films on metal or alloy substrate surfaces susceptible to coking, corrosion or catalytic activity

Also Published As

Publication number Publication date
JPH07120651B2 (ja) 1995-12-20
ES545000A0 (es) 1986-01-16
DE3569065D1 (en) 1989-04-27
EP0187826B1 (en) 1989-03-22
WO1986000753A1 (en) 1986-01-30
EP0187826A1 (en) 1986-07-23
CA1240215A (en) 1988-08-09
JPS61502716A (ja) 1986-11-20

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