ES8800511A1 - Procedimiento para fabricar un dispositivo semiconductor - Google Patents

Procedimiento para fabricar un dispositivo semiconductor

Info

Publication number
ES8800511A1
ES8800511A1 ES556460A ES556460A ES8800511A1 ES 8800511 A1 ES8800511 A1 ES 8800511A1 ES 556460 A ES556460 A ES 556460A ES 556460 A ES556460 A ES 556460A ES 8800511 A1 ES8800511 A1 ES 8800511A1
Authority
ES
Spain
Prior art keywords
procedure
manufacturing
substrate
semiconductive device
unditioning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES556460A
Other languages
English (en)
Other versions
ES556460A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of ES556460A0 publication Critical patent/ES556460A0/es
Publication of ES8800511A1 publication Critical patent/ES8800511A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PROCEDIMIENTO PARA FABRICAR UN DISPOSITIVO SEMICONDUCTOR. CONSTA DE LAS SIGUIENTES OPERACIONES PARA FORMAR UNA MASCARA PROTECTORA DE SUSTRATO: MORDENTAR EL SUSTRATO (14) PARA FORMAR CAVIDADES QUE DEFINAN ELEMENTOS UNDIENDO LA REACCION DEL SUSTRATO CON UN REACTIVO ENERGETICO, Y DAR POR TERMINADO EL PROCESO PRODUCIENDOSE LA REDEPOSICION DE MATERIAL SOBRE LAS PAREDES LATERALES DE LA CAVIDAD DURANTE EL MORDENTADO, CARACTERIZADO POR COMPRENDER UNA FASE ELEGIDA ENTRE COMPENSAR LOCALMENTE EL EFECTO DE LA REDEPOSICION SOBRE LA CONFORMACION DE LA PARED LATERAL.
ES556460A 1985-06-28 1986-06-23 Procedimiento para fabricar un dispositivo semiconductor Expired ES8800511A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75008485A 1985-06-28 1985-06-28

Publications (2)

Publication Number Publication Date
ES556460A0 ES556460A0 (es) 1987-11-16
ES8800511A1 true ES8800511A1 (es) 1987-11-16

Family

ID=25016427

Family Applications (1)

Application Number Title Priority Date Filing Date
ES556460A Expired ES8800511A1 (es) 1985-06-28 1986-06-23 Procedimiento para fabricar un dispositivo semiconductor

Country Status (6)

Country Link
EP (1) EP0229104A1 (es)
JP (2) JPS62503204A (es)
KR (1) KR930006526B1 (es)
CA (1) CA1287556C (es)
ES (1) ES8800511A1 (es)
WO (1) WO1987000345A1 (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289331A (ja) * 1985-10-16 1987-04-23 Toshiba Corp 微細パタ−ンの加工方法
EP0416809A3 (en) * 1989-09-08 1991-08-07 American Telephone And Telegraph Company Reduced size etching method for integrated circuits
US5492552A (en) * 1994-03-03 1996-02-20 Minnesota Mining And Manufacturing Company Holder for annealing fiber optic coils
US5463312A (en) * 1994-03-03 1995-10-31 Minnesota Mining And Manufacturing Company Faraday-effect sensing coil with stable birefringence
JP2924723B2 (ja) * 1995-08-16 1999-07-26 日本電気株式会社 ドライエッチング方法
EP1844495B1 (en) * 2005-01-24 2011-07-27 Panasonic Corporation Manufacturing method for semiconductor chips
KR102164381B1 (ko) * 2018-12-10 2020-10-12 연세대학교 산학협력단 나노 구조체 제조 방법 및 이를 이용하여 제조한 나노 구조체

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4208241A (en) * 1978-07-31 1980-06-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
JPS5713180A (en) * 1980-06-25 1982-01-23 Fujitsu Ltd Etching method
CA1202597A (en) * 1981-05-22 1986-04-01 Jean S. Deslauriers Reactive ion layers containing tantalum and silicon
US4436584A (en) * 1983-03-21 1984-03-13 Sperry Corporation Anisotropic plasma etching of semiconductors

Also Published As

Publication number Publication date
ES556460A0 (es) 1987-11-16
JPS62503204A (ja) 1987-12-17
KR930006526B1 (ko) 1993-07-16
KR880700459A (ko) 1988-03-15
JP2000216148A (ja) 2000-08-04
EP0229104A1 (en) 1987-07-22
WO1987000345A1 (en) 1987-01-15
CA1287556C (en) 1991-08-13

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20020717