ES556460A0 - Procedimiento para fabricar un dispositivo semiconductor - Google Patents
Procedimiento para fabricar un dispositivo semiconductorInfo
- Publication number
- ES556460A0 ES556460A0 ES556460A ES556460A ES556460A0 ES 556460 A0 ES556460 A0 ES 556460A0 ES 556460 A ES556460 A ES 556460A ES 556460 A ES556460 A ES 556460A ES 556460 A0 ES556460 A0 ES 556460A0
- Authority
- ES
- Spain
- Prior art keywords
- procedure
- manufacturing
- semiconductive device
- semiconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
- H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75008485A | 1985-06-28 | 1985-06-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES556460A0 true ES556460A0 (es) | 1987-11-16 |
| ES8800511A1 ES8800511A1 (es) | 1987-11-16 |
Family
ID=25016427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES556460A Expired ES8800511A1 (es) | 1985-06-28 | 1986-06-23 | Procedimiento para fabricar un dispositivo semiconductor |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0229104A1 (es) |
| JP (2) | JPS62503204A (es) |
| KR (1) | KR930006526B1 (es) |
| CA (1) | CA1287556C (es) |
| ES (1) | ES8800511A1 (es) |
| WO (1) | WO1987000345A1 (es) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6289331A (ja) * | 1985-10-16 | 1987-04-23 | Toshiba Corp | 微細パタ−ンの加工方法 |
| EP0416809A3 (en) * | 1989-09-08 | 1991-08-07 | American Telephone And Telegraph Company | Reduced size etching method for integrated circuits |
| US5492552A (en) * | 1994-03-03 | 1996-02-20 | Minnesota Mining And Manufacturing Company | Holder for annealing fiber optic coils |
| US5463312A (en) * | 1994-03-03 | 1995-10-31 | Minnesota Mining And Manufacturing Company | Faraday-effect sensing coil with stable birefringence |
| JP2924723B2 (ja) * | 1995-08-16 | 1999-07-26 | 日本電気株式会社 | ドライエッチング方法 |
| EP1844495B1 (en) * | 2005-01-24 | 2011-07-27 | Panasonic Corporation | Manufacturing method for semiconductor chips |
| KR102164381B1 (ko) * | 2018-12-10 | 2020-10-12 | 연세대학교 산학협력단 | 나노 구조체 제조 방법 및 이를 이용하여 제조한 나노 구조체 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4208241A (en) * | 1978-07-31 | 1980-06-17 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| JPS5713180A (en) * | 1980-06-25 | 1982-01-23 | Fujitsu Ltd | Etching method |
| CA1202597A (en) * | 1981-05-22 | 1986-04-01 | Jean S. Deslauriers | Reactive ion layers containing tantalum and silicon |
| US4436584A (en) * | 1983-03-21 | 1984-03-13 | Sperry Corporation | Anisotropic plasma etching of semiconductors |
-
1986
- 1986-05-27 EP EP86903910A patent/EP0229104A1/en not_active Ceased
- 1986-05-27 WO PCT/US1986/001155 patent/WO1987000345A1/en not_active Ceased
- 1986-05-27 JP JP61503237A patent/JPS62503204A/ja active Pending
- 1986-05-27 KR KR1019870700161A patent/KR930006526B1/ko not_active Expired - Fee Related
- 1986-06-23 ES ES556460A patent/ES8800511A1/es not_active Expired
- 1986-06-23 CA CA000512190A patent/CA1287556C/en not_active Expired - Fee Related
-
2000
- 2000-01-27 JP JP2000018691A patent/JP2000216148A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62503204A (ja) | 1987-12-17 |
| ES8800511A1 (es) | 1987-11-16 |
| KR930006526B1 (ko) | 1993-07-16 |
| KR880700459A (ko) | 1988-03-15 |
| JP2000216148A (ja) | 2000-08-04 |
| EP0229104A1 (en) | 1987-07-22 |
| WO1987000345A1 (en) | 1987-01-15 |
| CA1287556C (en) | 1991-08-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 20020717 |