FR1479917A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR1479917A
FR1479917A FR7800A FR06007800A FR1479917A FR 1479917 A FR1479917 A FR 1479917A FR 7800 A FR7800 A FR 7800A FR 06007800 A FR06007800 A FR 06007800A FR 1479917 A FR1479917 A FR 1479917A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7800A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1479917A publication Critical patent/FR1479917A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/018—Manufacture or treatment of isolation regions comprising dielectric materials using selective deposition of crystalline silicon, e.g. using epitaxial growth of silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
FR7800A 1965-05-10 1966-05-02 Dispositif semi-conducteur Expired FR1479917A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US454374A US3386865A (en) 1965-05-10 1965-05-10 Process of making planar semiconductor devices isolated by encapsulating oxide filled channels

Publications (1)

Publication Number Publication Date
FR1479917A true FR1479917A (fr) 1967-05-05

Family

ID=23804355

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7800A Expired FR1479917A (fr) 1965-05-10 1966-05-02 Dispositif semi-conducteur

Country Status (3)

Country Link
US (1) US3386865A (fr)
FR (1) FR1479917A (fr)
GB (1) GB1116209A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2098322A1 (fr) * 1970-07-10 1972-03-10 Philips Nv
FR2098323A2 (fr) * 1966-10-05 1972-03-10 Philips Nv

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
US7038290B1 (en) 1965-09-28 2006-05-02 Li Chou H Integrated circuit device
US5696402A (en) * 1965-09-28 1997-12-09 Li; Chou H. Integrated circuit device
US4946800A (en) * 1965-09-28 1990-08-07 Li Chou H Method for making solid-state device utilizing isolation grooves
US4916513A (en) * 1965-09-28 1990-04-10 Li Chou H Dielectrically isolated integrated circuit structure
US6849918B1 (en) 1965-09-28 2005-02-01 Chou H. Li Miniaturized dielectrically isolated solid state device
NL159817B (nl) * 1966-10-05 1979-03-15 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
NL7010208A (fr) * 1966-10-05 1972-01-12 Philips Nv
USRE28653E (en) * 1968-04-23 1975-12-16 Method of fabricating semiconductor devices
GB1280022A (en) * 1968-08-30 1972-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
CA920281A (en) * 1970-02-19 1973-01-30 N.V. Philips Gloeilampenfabrieken Method of manufacturing a semiconductor device and semiconductor device obtained by using the method
NL170902C (nl) * 1970-07-10 1983-01-03 Philips Nv Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
NL169936C (nl) * 1970-07-10 1982-09-01 Philips Nv Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.
FR2098325B1 (fr) * 1970-07-10 1977-04-22 Philips Nv
CH542517A (de) * 1970-07-10 1973-09-30 Philips Nv Halbleitervorrichtung mit einem Transistor und Verfahren zur Herstellung der Halbleitervorrichtung
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
NL173110C (nl) * 1971-03-17 1983-12-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.
NL170901C (nl) * 1971-04-03 1983-01-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL166156C (nl) * 1971-05-22 1981-06-15 Philips Nv Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.
US3947299A (en) * 1971-05-22 1976-03-30 U.S. Philips Corporation Method of manufacturing semiconductor devices
US4965652A (en) * 1971-06-07 1990-10-23 International Business Machines Corporation Dielectric isolation for high density semiconductor devices
US4396933A (en) * 1971-06-18 1983-08-02 International Business Machines Corporation Dielectrically isolated semiconductor devices
US3928091A (en) * 1971-09-27 1975-12-23 Hitachi Ltd Method for manufacturing a semiconductor device utilizing selective oxidation
JPS4852182A (fr) * 1971-10-29 1973-07-21
US3859127A (en) * 1972-01-24 1975-01-07 Motorola Inc Method and material for passivating the junctions of mesa type semiconductor devices
US3828232A (en) * 1972-02-28 1974-08-06 Tokyo Shibaura Electric Co Semiconductor target
US3861968A (en) * 1972-06-19 1975-01-21 Ibm Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition
US3784847A (en) * 1972-10-10 1974-01-08 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
JPS5624370B2 (fr) * 1973-06-04 1981-06-05
US4047195A (en) * 1973-11-12 1977-09-06 Scientific Micro Systems, Inc. Semiconductor structure
US3986200A (en) * 1974-01-02 1976-10-12 Signetics Corporation Semiconductor structure and method
US3883948A (en) * 1974-01-02 1975-05-20 Signetics Corp Semiconductor structure and method
US3913124A (en) * 1974-01-03 1975-10-14 Motorola Inc Integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector including fabrication method therefor
US3919060A (en) * 1974-06-14 1975-11-11 Ibm Method of fabricating semiconductor device embodying dielectric isolation
US3998673A (en) * 1974-08-16 1976-12-21 Pel Chow Method for forming electrically-isolated regions in integrated circuits utilizing selective epitaxial growth
JPS5146083A (en) * 1974-10-18 1976-04-20 Hitachi Ltd Handotaisochino seizohoho
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
US4005452A (en) * 1974-11-15 1977-01-25 International Telephone And Telegraph Corporation Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby
JPS51135385A (en) * 1975-03-06 1976-11-24 Texas Instruments Inc Method of producing semiconductor device
US3954523A (en) * 1975-04-14 1976-05-04 International Business Machines Corporation Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation
US3972754A (en) * 1975-05-30 1976-08-03 Ibm Corporation Method for forming dielectric isolation in integrated circuits
US4542579A (en) * 1975-06-30 1985-09-24 International Business Machines Corporation Method for forming aluminum oxide dielectric isolation in integrated circuits
JPS5518047B1 (fr) * 1975-11-10 1980-05-16
FR2341201A1 (fr) * 1976-02-16 1977-09-09 Radiotechnique Compelec Procede d'isolement entre regions d'un dispositif semiconducteur et dispositif ainsi obtenu
US4198649A (en) * 1976-09-03 1980-04-15 Fairchild Camera And Instrument Corporation Memory cell structure utilizing conductive buried regions
US4064527A (en) * 1976-09-20 1977-12-20 Intersil, Inc. Integrated circuit having a buried load device
JPS5534619U (fr) * 1978-08-25 1980-03-06
JPS55130176A (en) * 1979-03-30 1980-10-08 Hitachi Ltd Field effect semiconductor element and method of fabricating the same
US4231819A (en) * 1979-07-27 1980-11-04 Massachusetts Institute Of Technology Dielectric isolation method using shallow oxide and polycrystalline silicon utilizing a preliminary etching step
US4283235A (en) * 1979-07-27 1981-08-11 Massachusetts Institute Of Technology Dielectric isolation using shallow oxide and polycrystalline silicon utilizing selective oxidation
JPS5977776A (ja) * 1982-10-25 1984-05-04 Mitsubishi Electric Corp 固体撮像素子
US4658497A (en) * 1983-01-03 1987-04-21 Rca Corporation Method of making an imaging array having a higher sensitivity
US4612701A (en) * 1984-03-12 1986-09-23 Harris Corporation Method to reduce the height of the bird's head in oxide isolated processes
JPH0671043B2 (ja) * 1984-08-31 1994-09-07 株式会社東芝 シリコン結晶体構造の製造方法
US4628591A (en) * 1984-10-31 1986-12-16 Texas Instruments Incorporated Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
US4692992A (en) * 1986-06-25 1987-09-15 Rca Corporation Method of forming isolation regions in a semiconductor device
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US5883566A (en) * 1997-02-24 1999-03-16 International Business Machines Corporation Noise-isolated buried resistor
US6177333B1 (en) * 1999-01-14 2001-01-23 Micron Technology, Inc. Method for making a trench isolation for semiconductor devices
JP4610982B2 (ja) * 2003-11-11 2011-01-12 シャープ株式会社 半導体装置の製造方法
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL286507A (fr) * 1961-12-11
US3265542A (en) * 1962-03-15 1966-08-09 Philco Corp Semiconductor device and method for the fabrication thereof
US3234058A (en) * 1962-06-27 1966-02-08 Ibm Method of forming an integral masking fixture by epitaxial growth
US3296040A (en) * 1962-08-17 1967-01-03 Fairchild Camera Instr Co Epitaxially growing layers of semiconductor through openings in oxide mask
GB1047388A (fr) * 1962-10-05
US3206339A (en) * 1963-09-30 1965-09-14 Philco Corp Method of growing geometricallydefined epitaxial layer without formation of undesirable crystallites
GB1095413A (fr) * 1964-12-24
US3343255A (en) * 1965-06-14 1967-09-26 Westinghouse Electric Corp Structures for semiconductor integrated circuits and methods of forming them

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2098323A2 (fr) * 1966-10-05 1972-03-10 Philips Nv
FR2098322A1 (fr) * 1970-07-10 1972-03-10 Philips Nv

Also Published As

Publication number Publication date
US3386865A (en) 1968-06-04
GB1116209A (en) 1968-06-06

Similar Documents

Publication Publication Date Title
FR1516424A (fr) Dispositif semi-conducteur
FR1505959A (fr) Dispositif semi-conducteur
FR1475436A (fr) Dispositif semi-conducteur
AT263084B (de) Halbleitervorrichtung
CH474851A (de) Halbleiteranordnung
FR1505701A (fr) Dispositif semi-conducteur
FR1473738A (fr) Dispositif à semi-conducteurs
AT264589B (de) Halbleiteranordnung
AT269217B (de) Halbleitervorrichtung
CH437539A (de) Halbleiteranordnung
FR1517751A (fr) Dispositif semi-conducteur
FR1489272A (fr) Dispositif semi-conducteur
FR1486215A (fr) Dispositif à semi-conducteur
AT273227B (de) Halbleitervorrichtung
AT254987B (de) Halbleiteranordnung
CH443492A (de) Halbleiteranordnung
FR1519530A (fr) Dispositif semi-conducteur
FR1546644A (fr) Dispositif semi-conducteur
FR1518374A (fr) Dispositif semi-conducteur
FR1471729A (fr) Dispositif semi-conducteur
FR1470898A (fr) Dispositif semi-conducteur
FR1493348A (fr) Dispositif semi-conducteur métla-oxyde
FR1475243A (fr) Dispositif semiconducteur
FR1504181A (fr) Dispositif semi-conducteur
FR1471292A (fr) Dispositif semi-conducteur perfectionné