FR2272486A1 - - Google Patents

Info

Publication number
FR2272486A1
FR2272486A1 FR7515787A FR7515787A FR2272486A1 FR 2272486 A1 FR2272486 A1 FR 2272486A1 FR 7515787 A FR7515787 A FR 7515787A FR 7515787 A FR7515787 A FR 7515787A FR 2272486 A1 FR2272486 A1 FR 2272486A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7515787A
Other languages
French (fr)
Other versions
FR2272486B1 (2
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2272486A1 publication Critical patent/FR2272486A1/fr
Application granted granted Critical
Publication of FR2272486B1 publication Critical patent/FR2272486B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/20Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/013Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326Aspects related to lithography, isolation or planarisation of the conductor
    • H10D64/0133Aspects related to lithography, isolation or planarisation of the conductor at least part of the entire electrode being a sidewall spacer, being formed by transformation under a mask or being formed by plating at a sidewall
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30Diffusion for doping of conductive or resistive layers
    • H10P32/302Doping polycrystalline silicon or amorphous silicon layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/66Wet etching of conductive or resistive materials
    • H10P50/663Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
FR7515787A 1974-05-21 1975-05-21 Expired FR2272486B1 (2)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2258374A GB1477511A (en) 1974-05-21 1974-05-21 Methods of manufacturing semiconductor devices

Publications (2)

Publication Number Publication Date
FR2272486A1 true FR2272486A1 (2) 1975-12-19
FR2272486B1 FR2272486B1 (2) 1979-01-19

Family

ID=10181779

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7515787A Expired FR2272486B1 (2) 1974-05-21 1975-05-21

Country Status (6)

Country Link
JP (1) JPS5617826B2 (2)
CA (1) CA1040749A (2)
DE (1) DE2522448A1 (2)
FR (1) FR2272486B1 (2)
GB (1) GB1477511A (2)
NL (1) NL7505698A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2341200A1 (fr) * 1976-02-10 1977-09-09 Intel Corp Procede de formation d'une interconnexion a faible resistance dans des circuits integres mos a grilles en silicium et a canaux n
FR2475293A1 (fr) * 1980-02-04 1981-08-07 Fairchild Camera Instr Co Procede de fabrication de transistor bipolaire lateral auto-aligne

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598855Y2 (ja) * 1978-09-01 1984-03-19 大阪電気株式会社 ワイヤ送給装置
JPS5546570A (en) * 1978-09-30 1980-04-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of fabricating mos semiconductor device
JPS6070401U (ja) * 1983-10-24 1985-05-18 株式会社月星製作所 車輪用スポ−ク
CN105824160B (zh) * 2015-01-08 2020-06-16 群创光电股份有限公司 显示面板

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542501B2 (2) * 1974-01-29 1980-10-31

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2341200A1 (fr) * 1976-02-10 1977-09-09 Intel Corp Procede de formation d'une interconnexion a faible resistance dans des circuits integres mos a grilles en silicium et a canaux n
FR2475293A1 (fr) * 1980-02-04 1981-08-07 Fairchild Camera Instr Co Procede de fabrication de transistor bipolaire lateral auto-aligne

Also Published As

Publication number Publication date
JPS51282A (2) 1976-01-05
DE2522448A1 (de) 1975-12-04
FR2272486B1 (2) 1979-01-19
GB1477511A (en) 1977-06-22
CA1040749A (en) 1978-10-17
NL7505698A (nl) 1975-11-25
JPS5617826B2 (2) 1981-04-24

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Legal Events

Date Code Title Description
ST Notification of lapse