FR2361304A1 - Procede de depot de silicium polycristallin - Google Patents

Procede de depot de silicium polycristallin

Info

Publication number
FR2361304A1
FR2361304A1 FR7712732A FR7712732A FR2361304A1 FR 2361304 A1 FR2361304 A1 FR 2361304A1 FR 7712732 A FR7712732 A FR 7712732A FR 7712732 A FR7712732 A FR 7712732A FR 2361304 A1 FR2361304 A1 FR 2361304A1
Authority
FR
France
Prior art keywords
polycrystalline silicon
deposit process
silicon deposit
silicon
support parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7712732A
Other languages
English (en)
Other versions
FR2361304B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of FR2361304A1 publication Critical patent/FR2361304A1/fr
Application granted granted Critical
Publication of FR2361304B1 publication Critical patent/FR2361304B1/fr
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé de dépôt de silicium polycristallin, à partir d'une phase gazeuse, sur des pièces supports en carbone. Le procédé selon l'invention est essentiellement caractérisé en ce que lesdites pièces supports sont assemblées à partir d'éléments souples planiformes en carbone, d'épaisseur comprise entre 0,1 et 2 mm On peut utiliser le silicium ainsi produit, après broyage, pour la production de silicium monocristallin par le procède de Czochralski, par fusion de zone avec tirage et creuset
FR7712732A 1976-04-27 1977-04-27 Procede de depot de silicium polycristallin Granted FR2361304A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762618273 DE2618273C3 (de) 1976-04-27 1976-04-27 Verfahren zur Abscheidung von polykristallinem Silicium

Publications (2)

Publication Number Publication Date
FR2361304A1 true FR2361304A1 (fr) 1978-03-10
FR2361304B1 FR2361304B1 (fr) 1981-01-09

Family

ID=5976298

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7712732A Granted FR2361304A1 (fr) 1976-04-27 1977-04-27 Procede de depot de silicium polycristallin

Country Status (9)

Country Link
JP (1) JPS52155142A (fr)
BE (1) BE853997A (fr)
CA (1) CA1092905A (fr)
DE (1) DE2618273C3 (fr)
FR (1) FR2361304A1 (fr)
GB (1) GB1569651A (fr)
IT (1) IT1086646B (fr)
NL (1) NL7702613A (fr)
SE (1) SE7704805L (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006110481A3 (fr) * 2005-04-10 2007-04-05 Rec Silicon Inc Production de silicium polycristallin

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354580A (en) * 1993-06-08 1994-10-11 Cvd Incorporated Triangular deposition chamber for a vapor deposition system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1391792A (fr) * 1962-12-19 1965-03-12 Thomson Houston Comp Francaise Perfectionnements aux procédés de formation d'un matériau en feuilles, notamment pour feuilles de graphite pyrolytique
DE1272801B (de) * 1965-07-14 1968-07-11 Hitco Cardena Verfahren zur Verkohlung von faserigem Zellulosematerial
DE2022025C3 (de) * 1970-05-05 1980-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen eines Hohlkörpers aus Halbleitermaterial
GB1292534A (en) * 1970-06-04 1972-10-11 Pfizer Method for making a continuous film of pyrolytic graphite having bi-directional reinforcing properties
DE2229229A1 (de) * 1972-06-15 1974-01-10 Siemens Ag Verfahren zum herstellen von aus silizium oder siliziumcarbid bestehenden formkoerpern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006110481A3 (fr) * 2005-04-10 2007-04-05 Rec Silicon Inc Production de silicium polycristallin

Also Published As

Publication number Publication date
BE853997A (fr) 1977-10-27
FR2361304B1 (fr) 1981-01-09
DE2618273A1 (de) 1977-11-03
DE2618273C3 (de) 1984-04-19
CA1092905A (fr) 1981-01-06
SE7704805L (sv) 1977-10-28
IT1086646B (it) 1985-05-28
DE2618273B2 (de) 1978-11-09
NL7702613A (nl) 1977-10-31
JPS52155142A (en) 1977-12-23
JPS5635604B2 (fr) 1981-08-18
GB1569651A (en) 1980-06-18

Similar Documents

Publication Publication Date Title
TW278203B (en) Method for preparing molten silicon melt from polycrystalline silicon
AU4369196A (en) Epitaxial growth of silicon carbide and resulting silicon carbide structures
GB1213867A (en) Method of manufacturing silicon carbide single crystal filaments
GB1490665A (en) Method of growing epitaxial layers of silicon
GB1375772A (fr)
GB1528897A (en) Method of purifying silicon
GB1438877A (en) Silicon or silicon carbide holders for use in diffusion operations
FR2392137A1 (fr) Procede de fabrication de pieces de silicium de grande surface fixees a un substrat
FR2361304A1 (fr) Procede de depot de silicium polycristallin
BE901114A (fr) Procede pour fabriquer du silicium a partir de quartz sous forme de materiaux brut dans un bas fourneau electrique.
DK86185D0 (da) Fremgangsmaade til fremstilling af 2-oxo-1-pyrrolidinacetamid-derivater
TW200745389A (en) Method for manufacturing single crystal
EP0390671A3 (fr) Procédé de dosage des impuretés métalliques dans du silicium monocristallin obtenu par le procédé Czochralski
JPS55104998A (en) Production of silicon carbide crystal layer
GB1434437A (en) Method and device for the preparation of doped cadmium telluride
FR2362215A1 (fr) Procede et dispositif de nickelage
TW353235B (en) In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon a dendritic web formation process and apparatus for diffusing dopant impurities into a growing dendritic crystal web to produce photovoltaic cells
GB1524523A (en) Device for controlling the diameter of a growing crystal
Ravi et al. Low cost silicon solar arrays
GB1312884A (en) Zone refining process
GB804268A (en) Improvements in and relating to refractory containers
CHU Development of low-cost thin film polycrystalline silicon solar cells for terrestrial applications[Quarterly Progress Report, 1 Jul.- 30 Sep. 1975]
JPS55116700A (en) Production of silicon carbide crystal layer
JPS55126596A (en) Production of single crystal
Sinelnikova et al. Single Crystals of Titanium Carbide and Their Certain Properties

Legal Events

Date Code Title Description
ST Notification of lapse