FR2437046A2 - Cellule de memoire a grille flottante - Google Patents

Cellule de memoire a grille flottante

Info

Publication number
FR2437046A2
FR2437046A2 FR7826803A FR7826803A FR2437046A2 FR 2437046 A2 FR2437046 A2 FR 2437046A2 FR 7826803 A FR7826803 A FR 7826803A FR 7826803 A FR7826803 A FR 7826803A FR 2437046 A2 FR2437046 A2 FR 2437046A2
Authority
FR
France
Prior art keywords
conductivity
floating grid
memory cell
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7826803A
Other languages
English (en)
Other versions
FR2437046B2 (fr
Inventor
Jean-Marie Gutierrez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments France SAS
Original Assignee
Texas Instruments France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7631541A external-priority patent/FR2368784A1/fr
Application filed by Texas Instruments France SAS filed Critical Texas Instruments France SAS
Priority to FR7826803A priority Critical patent/FR2437046A2/fr
Priority to US06/073,152 priority patent/US4305083A/en
Publication of FR2437046A2 publication Critical patent/FR2437046A2/fr
Application granted granted Critical
Publication of FR2437046B2 publication Critical patent/FR2437046B2/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)

Abstract

DANS CETTE CELLULE, LA JONCTION 18 FORMANT INJECTEUR DE CHARGES, DESTINEE A INJECTER SOIT DES ELECTRONS, SOIT DES TROUS DANS LA GRILLE FLOTTANTE 19 LORS DE L'APPLICATION A LA JONCTION D'UNE POLARISATION INVERSE COMPREND DANS UN SUBSTRAT SEMI-CONDUCTEUR 12 D'UN PREMIER TYPE DE CONDUCTIVITE, UNE PREMIERE REGION 14 DU TYPE DE CONDUCTIVITE OPPOSE DOPEE PAR IMPLANTATION IONIQUE ET UNE SECONDE REGION 15 DU MEME TYPE DE CONDUCTIVITE QUE LE SUBSTRAT 12 MAIS PRESENTANT UNE CONCENTRATION D'IONS SUPERIEURE A CELLE DUDIT SUBSTRAT, LA GRILLE FLOTTANTE 19 ETANT DISPOSEE AU-DESSUS DES PREMIERE ET SECONDE REGIONS 14, 15 ET SEPAREE DE CELLES-CI PAR UNE MINCE COUCHE D'ARRET.
FR7826803A 1976-10-20 1978-09-19 Cellule de memoire a grille flottante Granted FR2437046A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7826803A FR2437046A2 (fr) 1976-10-20 1978-09-19 Cellule de memoire a grille flottante
US06/073,152 US4305083A (en) 1978-09-19 1979-09-07 Single junction charge injector floating gate memory cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7631541A FR2368784A1 (fr) 1976-10-20 1976-10-20 Cellule de memoire a grille flottante a double injection
FR7826803A FR2437046A2 (fr) 1976-10-20 1978-09-19 Cellule de memoire a grille flottante

Publications (2)

Publication Number Publication Date
FR2437046A2 true FR2437046A2 (fr) 1980-04-18
FR2437046B2 FR2437046B2 (fr) 1982-02-26

Family

ID=32095143

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7826803A Granted FR2437046A2 (fr) 1976-10-20 1978-09-19 Cellule de memoire a grille flottante

Country Status (1)

Country Link
FR (1) FR2437046A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0420182A3 (en) * 1989-09-27 1993-01-07 Kabushiki Kaisha Toshiba Nonvolatile memory cell and its manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
NV433/76 *
NV461/76 *
NV700/73 *
NV8093/77 *
NV8107/72 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0420182A3 (en) * 1989-09-27 1993-01-07 Kabushiki Kaisha Toshiba Nonvolatile memory cell and its manufacturing method

Also Published As

Publication number Publication date
FR2437046B2 (fr) 1982-02-26

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