FR2445620A1 - Procede d'attaque par plasma pour la fabrication de dispositifs a semi-conducteurs - Google Patents

Procede d'attaque par plasma pour la fabrication de dispositifs a semi-conducteurs

Info

Publication number
FR2445620A1
FR2445620A1 FR7919155A FR7919155A FR2445620A1 FR 2445620 A1 FR2445620 A1 FR 2445620A1 FR 7919155 A FR7919155 A FR 7919155A FR 7919155 A FR7919155 A FR 7919155A FR 2445620 A1 FR2445620 A1 FR 2445620A1
Authority
FR
France
Prior art keywords
manufacture
semiconductor devices
attack process
plasma attack
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7919155A
Other languages
English (en)
Other versions
FR2445620B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2445620A1 publication Critical patent/FR2445620A1/fr
Application granted granted Critical
Publication of FR2445620B1 publication Critical patent/FR2445620B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

L'invention concerne la fabrication des dispositifs à semi-conducteurs. L'invention utilise une nouvelle catégorie d'agents d'attaque pour améliorer les techniques d'attaque par plasma.L'utilisation de ces agents, dont CF3 Cl est un exemple, améliore la définition de l'attaque de surfaces contenant du silicium, et permet entre autres de mieux diriger l'attaque, pour donner à la région attaquée des parois à profil vertical. Application à la fabrication des circuits intégrés complexes.
FR7919155A 1978-07-31 1979-07-25 Procede d'attaque par plasma pour la fabrication de dispositifs a semi-conducteurs Expired FR2445620B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/929,569 US4211601A (en) 1978-07-31 1978-07-31 Device fabrication by plasma etching

Publications (2)

Publication Number Publication Date
FR2445620A1 true FR2445620A1 (fr) 1980-07-25
FR2445620B1 FR2445620B1 (fr) 1985-06-28

Family

ID=25458067

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7919155A Expired FR2445620B1 (fr) 1978-07-31 1979-07-25 Procede d'attaque par plasma pour la fabrication de dispositifs a semi-conducteurs

Country Status (14)

Country Link
US (1) US4211601A (fr)
JP (1) JPS5521596A (fr)
AU (1) AU525807B2 (fr)
BE (1) BE877894A (fr)
CA (1) CA1124208A (fr)
DE (1) DE2930293C2 (fr)
ES (1) ES482961A1 (fr)
FR (1) FR2445620B1 (fr)
GB (1) GB2026396B (fr)
IE (1) IE48784B1 (fr)
IL (1) IL57889A (fr)
IT (1) IT1122657B (fr)
NL (1) NL185043C (fr)
SE (1) SE441879B (fr)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100422A (en) * 1980-01-17 1981-08-12 Toshiba Corp Plasma etching method
US4264409A (en) * 1980-03-17 1981-04-28 International Business Machines Corporation Contamination-free selective reactive ion etching or polycrystalline silicon against silicon dioxide
JPS56134738A (en) * 1980-03-26 1981-10-21 Toshiba Corp Method of forming pattern
US4310380A (en) * 1980-04-07 1982-01-12 Bell Telephone Laboratories, Incorporated Plasma etching of silicon
US4314875A (en) * 1980-05-13 1982-02-09 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4324611A (en) * 1980-06-26 1982-04-13 Branson International Plasma Corporation Process and gas mixture for etching silicon dioxide and silicon nitride
NL8004005A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4340461A (en) * 1980-09-10 1982-07-20 International Business Machines Corp. Modified RIE chamber for uniform silicon etching
DE3216823A1 (de) * 1982-05-05 1983-11-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus metallsilizid und polysilizium bestehenden doppelschichten auf integrierte halbleiterschaltungen enthaltenden substraten durch reaktives ionenaetzen
US4450042A (en) * 1982-07-06 1984-05-22 Texas Instruments Incorporated Plasma etch chemistry for anisotropic etching of silicon
NL8204437A (nl) * 1982-11-16 1984-06-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met behulp van plasma-etsen.
US4414057A (en) * 1982-12-03 1983-11-08 Inmos Corporation Anisotropic silicide etching process
US4502915B1 (en) * 1984-01-23 1998-11-03 Texas Instruments Inc Two-step plasma process for selective anisotropic etching of polycrystalline silicon without leaving residue
US4778562A (en) * 1984-08-13 1988-10-18 General Motors Corporation Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen
US4544444A (en) * 1984-08-15 1985-10-01 General Motors Corporation Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas
US4734157A (en) * 1985-08-27 1988-03-29 International Business Machines Corporation Selective and anisotropic dry etching
JPS62111432A (ja) * 1985-11-08 1987-05-22 Fujitsu Ltd 半導体装置の製造方法
DE3613181C2 (de) * 1986-04-18 1995-09-07 Siemens Ag Verfahren zum Erzeugen von Gräben mit einstellbarer Steilheit der Grabenwände in aus Silizium bestehenden Halbleitersubstraten
DE3736531A1 (de) * 1986-10-30 1988-05-11 Mitsubishi Electric Corp Verfahren zur herstellung einer halbleitereinrichtung
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US5385633A (en) * 1990-03-29 1995-01-31 The United States Of America As Represented By The Secretary Of The Navy Method for laser-assisted silicon etching using halocarbon ambients
US5493445A (en) * 1990-03-29 1996-02-20 The United States Of America As Represented By The Secretary Of The Navy Laser textured surface absorber and emitter
US5300463A (en) * 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
US5716494A (en) * 1992-06-22 1998-02-10 Matsushita Electric Industrial Co., Ltd. Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
US5356692A (en) * 1992-07-27 1994-10-18 Lockheed Missiles & Space Company, Inc. Grid structure with sinuous interstices
JP3370806B2 (ja) 1994-11-25 2003-01-27 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
US6165375A (en) * 1997-09-23 2000-12-26 Cypress Semiconductor Corporation Plasma etching method
US6372634B1 (en) 1999-06-15 2002-04-16 Cypress Semiconductor Corp. Plasma etch chemistry and method of improving etch control
US6583065B1 (en) * 1999-08-03 2003-06-24 Applied Materials Inc. Sidewall polymer forming gas additives for etching processes
US6322716B1 (en) 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
DE10103524A1 (de) * 2001-01-26 2002-08-22 Infineon Technologies Ag Verfahren und Halbleiteranordnung zur Ätzung einer Schicht eines Halbleitersubstrats mittels einer siliziumhaltigen Ätzmaske
US20040224524A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Maintaining the dimensions of features being etched on a lithographic mask
JP5537324B2 (ja) * 2010-08-05 2014-07-02 株式会社東芝 半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529353B2 (fr) * 1972-04-18 1977-03-15
JPS5441870B2 (fr) * 1972-11-22 1979-12-11
GB1417085A (en) * 1973-05-17 1975-12-10 Standard Telephones Cables Ltd Plasma etching
US3880684A (en) * 1973-08-03 1975-04-29 Mitsubishi Electric Corp Process for preparing semiconductor
US3984301A (en) * 1973-08-11 1976-10-05 Nippon Electric Varian, Ltd. Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge
US4069096A (en) * 1975-11-03 1978-01-17 Texas Instruments Incorporated Silicon etching process

Also Published As

Publication number Publication date
IT1122657B (it) 1986-04-23
NL7905869A (nl) 1980-02-04
NL185043C (nl) 1990-01-02
BE877894A (fr) 1979-11-16
IE48784B1 (en) 1985-05-15
SE7906300L (sv) 1980-02-01
ES482961A1 (es) 1980-03-01
SE441879B (sv) 1985-11-11
GB2026396A (en) 1980-02-06
CA1124208A (fr) 1982-05-25
GB2026396B (en) 1982-07-07
IL57889A0 (en) 1979-11-30
NL185043B (nl) 1989-08-01
IT7924776A0 (it) 1979-07-30
IE791449L (en) 1980-01-31
DE2930293A1 (de) 1980-02-28
JPS5521596A (en) 1980-02-15
FR2445620B1 (fr) 1985-06-28
DE2930293C2 (de) 1987-04-16
IL57889A (en) 1981-12-31
AU525807B2 (en) 1982-12-02
US4211601A (en) 1980-07-08
AU4923579A (en) 1980-02-07

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