FR2933232B1 - Procede de fabrication de dispositifs semi-conducteurs,et structure semi-conductrice obtenue par un tel procede - Google Patents

Procede de fabrication de dispositifs semi-conducteurs,et structure semi-conductrice obtenue par un tel procede

Info

Publication number
FR2933232B1
FR2933232B1 FR0803676A FR0803676A FR2933232B1 FR 2933232 B1 FR2933232 B1 FR 2933232B1 FR 0803676 A FR0803676 A FR 0803676A FR 0803676 A FR0803676 A FR 0803676A FR 2933232 B1 FR2933232 B1 FR 2933232B1
Authority
FR
France
Prior art keywords
structure obtained
semiconductor devices
semiconductor structure
manufacturing
manufacturing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0803676A
Other languages
English (en)
Other versions
FR2933232A1 (fr
Inventor
Bich Yen Nguyen
Carlos Mazure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0803676A priority Critical patent/FR2933232B1/fr
Priority to JP2011514659A priority patent/JP2011525302A/ja
Priority to KR1020107027234A priority patent/KR20110006704A/ko
Priority to KR1020127018299A priority patent/KR20120087193A/ko
Publication of FR2933232A1 publication Critical patent/FR2933232A1/fr
Application granted granted Critical
Publication of FR2933232B1 publication Critical patent/FR2933232B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
FR0803676A 2008-06-30 2008-06-30 Procede de fabrication de dispositifs semi-conducteurs,et structure semi-conductrice obtenue par un tel procede Expired - Fee Related FR2933232B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0803676A FR2933232B1 (fr) 2008-06-30 2008-06-30 Procede de fabrication de dispositifs semi-conducteurs,et structure semi-conductrice obtenue par un tel procede
JP2011514659A JP2011525302A (ja) 2008-06-30 2009-05-18 半導体構造の製造方法およびこの方法により得られる半導体構造
KR1020107027234A KR20110006704A (ko) 2008-06-30 2009-05-18 반도체 구조의 제조 방법들 및 이와 같은 방법들에 의해 얻어지는 반도체 구조들
KR1020127018299A KR20120087193A (ko) 2008-06-30 2009-05-18 반도체 구조의 제조 방법들 및 이와 같은 방법들에 의해 얻어지는 반도체 구조들

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0803676A FR2933232B1 (fr) 2008-06-30 2008-06-30 Procede de fabrication de dispositifs semi-conducteurs,et structure semi-conductrice obtenue par un tel procede

Publications (2)

Publication Number Publication Date
FR2933232A1 FR2933232A1 (fr) 2010-01-01
FR2933232B1 true FR2933232B1 (fr) 2010-10-29

Family

ID=40263475

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0803676A Expired - Fee Related FR2933232B1 (fr) 2008-06-30 2008-06-30 Procede de fabrication de dispositifs semi-conducteurs,et structure semi-conductrice obtenue par un tel procede

Country Status (3)

Country Link
JP (1) JP2011525302A (fr)
KR (2) KR20120087193A (fr)
FR (1) FR2933232B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9257407B2 (en) * 2013-10-28 2016-02-09 Qualcomm Incorporated Heterogeneous channel material integration into wafer
EP3123507A4 (fr) * 2014-03-27 2017-12-06 Intel Corporation Intégration de traitement de système sur puce (soc) électronique souple multi-dispositifs
WO2016140385A1 (fr) * 2015-03-05 2016-09-09 에이스기계(주) Appareil de transfert et de traitement de découpe
CN117311108B (zh) * 2023-11-30 2024-04-05 合肥晶合集成电路股份有限公司 套刻标记及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4232844A1 (de) * 1992-09-30 1994-03-31 Siemens Ag Belichtungsverfahren und Maske für die optische Projektionslithographie
JPH10209170A (ja) * 1997-01-17 1998-08-07 Hitachi Ltd 半導体ウエハおよびその製造方法ならびに半導体集積回路装置およびその製造方法
US6140163A (en) * 1997-07-11 2000-10-31 Advanced Micro Devices, Inc. Method and apparatus for upper level substrate isolation integrated with bulk silicon
JP3523531B2 (ja) * 1999-06-18 2004-04-26 シャープ株式会社 半導体装置の製造方法
US6835983B2 (en) * 2002-10-25 2004-12-28 International Business Machines Corporation Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness
JP4604637B2 (ja) * 2004-10-07 2011-01-05 ソニー株式会社 半導体装置および半導体装置の製造方法
JP2006229047A (ja) * 2005-02-18 2006-08-31 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP2007165492A (ja) * 2005-12-13 2007-06-28 Seiko Instruments Inc 半導体集積回路装置

Also Published As

Publication number Publication date
KR20110006704A (ko) 2011-01-20
FR2933232A1 (fr) 2010-01-01
KR20120087193A (ko) 2012-08-06
JP2011525302A (ja) 2011-09-15

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Effective date: 20140228