FR3085540B1 - Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication - Google Patents

Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication Download PDF

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Publication number
FR3085540B1
FR3085540B1 FR1857842A FR1857842A FR3085540B1 FR 3085540 B1 FR3085540 B1 FR 3085540B1 FR 1857842 A FR1857842 A FR 1857842A FR 1857842 A FR1857842 A FR 1857842A FR 3085540 B1 FR3085540 B1 FR 3085540B1
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FR
France
Prior art keywords
long time
time constant
conductive region
manufacturing process
integrated device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1857842A
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English (en)
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FR3085540A1 (fr
Inventor
Abderrezak Marzaki
Pascal Fornara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
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STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1857842A priority Critical patent/FR3085540B1/fr
Priority to US16/549,000 priority patent/US10937746B2/en
Priority to CN201921427728.7U priority patent/CN210897282U/zh
Priority to CN201910812739.5A priority patent/CN110875308B/zh
Priority to CN202510866806.7A priority patent/CN120813042A/zh
Publication of FR3085540A1 publication Critical patent/FR3085540A1/fr
Application granted granted Critical
Publication of FR3085540B1 publication Critical patent/FR3085540B1/fr
Priority to US17/159,698 priority patent/US11721646B2/en
Priority to US18/210,286 priority patent/US20230326883A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
    • G—PHYSICS
    • G04—HOROLOGY
    • G04F—TIME-INTERVAL MEASURING
    • G04F1/00—Apparatus which can be set and started to measure-off predetermined or adjustably-fixed time intervals without driving mechanisms, e.g. egg timers
    • G04F1/005—Apparatus which can be set and started to measure-off predetermined or adjustably-fixed time intervals without driving mechanisms, e.g. egg timers using electronic timing, e.g. counting means
    • G—PHYSICS
    • G04—HOROLOGY
    • G04F—TIME-INTERVAL MEASURING
    • G04F10/00—Apparatus for measuring unknown time intervals by electric means
    • G04F10/10—Apparatus for measuring unknown time intervals by electric means by measuring electric or magnetic quantities changing in proportion to time
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/14—Subject matter not provided for in other groups of this subclass comprising memory cells that only have passive resistors or passive capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/40—Arrangements for protection of devices protecting against tampering, e.g. unauthorised inspection or reverse engineering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

Le dispositif de mesure temporelle à constante de temps ultra longue (10), comprend une pluralité d'éléments capacitifs élémentaires (C31-C3n) en série, chaque élément capacitif élémentaire comprenant chacun un empilement d'une première région conductrice (P1), d'une couche diélectrique (DI) d'épaisseur adaptée pour laisser circuler des charges par effet tunnel direct, et d'une deuxième région conductrice (P2). La première région conductrice (P1) est logée dans une tranchée (TR) s'étendant depuis une face avant (FA) d'un substrat semiconducteur (1), en profondeur dans le substrat, tandis que la couche diélectrique (DI) repose sur la face avant (FA) du substrat et la deuxième région conductrice (P2) repose sur la couche diélectrique (DI).
FR1857842A 2018-08-31 2018-08-31 Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication Active FR3085540B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1857842A FR3085540B1 (fr) 2018-08-31 2018-08-31 Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication
US16/549,000 US10937746B2 (en) 2018-08-31 2019-08-23 Integrated ultralong time constant time measurement device and fabrication process
CN201910812739.5A CN110875308B (zh) 2018-08-31 2019-08-30 集成的超长时间常数时间测量设备和制造过程
CN202510866806.7A CN120813042A (zh) 2018-08-31 2019-08-30 集成的超长时间常数时间测量设备和制造过程
CN201921427728.7U CN210897282U (zh) 2018-08-31 2019-08-30 集成的超长时间常数时间测量设备
US17/159,698 US11721646B2 (en) 2018-08-31 2021-01-27 Integrated ultralong time constant time measurement device and fabrication process
US18/210,286 US20230326883A1 (en) 2018-08-31 2023-06-15 Integrated ultralong time constant time measurement device and fabrication process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1857842 2018-08-31
FR1857842A FR3085540B1 (fr) 2018-08-31 2018-08-31 Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication

Publications (2)

Publication Number Publication Date
FR3085540A1 FR3085540A1 (fr) 2020-03-06
FR3085540B1 true FR3085540B1 (fr) 2020-09-25

Family

ID=65494248

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1857842A Active FR3085540B1 (fr) 2018-08-31 2018-08-31 Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication

Country Status (3)

Country Link
US (3) US10937746B2 (fr)
CN (3) CN110875308B (fr)
FR (1) FR3085540B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3085540B1 (fr) * 2018-08-31 2020-09-25 St Microelectronics Rousset Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication
FR3115631B1 (fr) 2020-10-23 2022-11-04 St Microelectronics Crolles 2 Sas Composant semiconducteur de circuit intégré

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266144A (en) * 1979-05-14 1981-05-05 Emhart Industries, Inc. Detection means for multiple capacitive sensing devices
JPH04348068A (ja) * 1991-03-18 1992-12-03 Toshiba Corp 半導体記憶装置
JPH0778886A (ja) * 1993-09-07 1995-03-20 Nec Corp ダイナミック・ランダム・アクセス・メモリの容量素子
JP3455097B2 (ja) * 1997-12-04 2003-10-06 株式会社東芝 ダイナミック型半導体記憶装置及びその製造方法
US6677637B2 (en) * 1999-06-11 2004-01-13 International Business Machines Corporation Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
FR2819632B1 (fr) * 2001-01-12 2003-09-26 St Microelectronics Sa Circuit integre comportant un dispositif analogique de stockage de charges, et procede de fabrication
JP2002222934A (ja) * 2001-01-29 2002-08-09 Nec Corp 半導体装置およびその製造方法
DE10154392A1 (de) * 2001-11-06 2003-05-15 Philips Corp Intellectual Pty Ladungsdetektor-Halbleiterbauelement, System aus einem Ladungsdetektor-Halbleiterbauelement und einem Referenz-Halbleiterbauelement, Wafer, Verwendung eines Wafers und Verfahren zur qualitativen und quantitativen Messung einer Aufladung eines Wafers
US8076707B1 (en) * 2002-05-09 2011-12-13 Synopsys, Inc. Pseudo-nonvolatile direct-tunneling floating-gate device
US6940705B2 (en) * 2003-07-25 2005-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitor with enhanced performance and method of manufacture
JP2007172766A (ja) * 2005-12-22 2007-07-05 Matsushita Electric Ind Co Ltd 半導体リーク電流検出器とリーク電流測定方法および電圧トリミング機能付半導体リーク電流検出器とリファレンス電圧トリミング方法およびこれらの半導体集積回路
JP2007266438A (ja) * 2006-03-29 2007-10-11 Hitachi Ltd 半導体記憶装置
FR2904464A1 (fr) * 2006-07-27 2008-02-01 St Microelectronics Sa Circuit eeprom de retention de charges pour mesure temporelle
WO2008012459A2 (fr) * 2006-07-27 2008-01-31 Stmicroelectronics Sa Circuit de retention de charges pour mesure temporelle
US7460441B2 (en) * 2007-01-12 2008-12-02 Microchip Technology Incorporated Measuring a long time period
KR100911379B1 (ko) * 2007-06-14 2009-08-10 삼성전자주식회사 반도체 집적 회로의 해킹 검출기 및 그것의 검출 방법
US8816419B2 (en) * 2007-06-19 2014-08-26 Rohm Co., Ltd. Semiconductor device
US8054090B2 (en) * 2008-10-22 2011-11-08 Atmel Corporation Noise handling in capacitive touch sensors
US8248152B2 (en) * 2009-02-25 2012-08-21 International Business Machines Corporation Switched capacitor voltage converters
JP5440918B2 (ja) * 2009-09-02 2014-03-12 独立行政法人 宇宙航空研究開発機構 バランス回路を備えた蓄電装置
FR2959580A1 (fr) * 2010-05-03 2011-11-04 St Microelectronics Rousset Circuit et procede de detection d'une attaque par injection de fautes
US8502340B2 (en) * 2010-12-09 2013-08-06 Tessera, Inc. High density three-dimensional integrated capacitors
KR101796045B1 (ko) * 2011-04-12 2017-11-10 엘지전자 주식회사 태양광 모듈
FR2981190B1 (fr) 2011-10-06 2014-03-21 St Microelectronics Rousset Circuit d'ecoulement de charges electriques pour une mesure temporelle
US8779550B2 (en) * 2012-06-27 2014-07-15 Texas Instruments Incorporated Analog floating-gate capacitor with improved data retention in a silicided integrated circuit
FR2994020B1 (fr) * 2012-07-30 2015-04-10 St Microelectronics Rousset Element d'ecoulement de charges electriques
US9105759B2 (en) * 2013-11-27 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitive device and method of making the same
US9224799B2 (en) * 2013-12-31 2015-12-29 Intermolecular, Inc. Capacitors including inner and outer electrodes
FR3038411B1 (fr) * 2015-06-30 2018-08-17 Stmicroelectronics (Rousset) Sas Detection d'authenticite d'un circuit electronique ou d'un produit contenant un tel circuit
US10693310B2 (en) * 2017-10-31 2020-06-23 Sargent Manufacturing Company Hiccup charger
FR3085540B1 (fr) * 2018-08-31 2020-09-25 St Microelectronics Rousset Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication

Also Published As

Publication number Publication date
US20210151392A1 (en) 2021-05-20
CN110875308A (zh) 2020-03-10
CN120813042A (zh) 2025-10-17
US20230326883A1 (en) 2023-10-12
FR3085540A1 (fr) 2020-03-06
US10937746B2 (en) 2021-03-02
US11721646B2 (en) 2023-08-08
US20200075506A1 (en) 2020-03-05
CN210897282U (zh) 2020-06-30
CN110875308B (zh) 2025-07-22

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