FR3086797B1 - Circuit electronique comprenant des diodes - Google Patents

Circuit electronique comprenant des diodes Download PDF

Info

Publication number
FR3086797B1
FR3086797B1 FR1858874A FR1858874A FR3086797B1 FR 3086797 B1 FR3086797 B1 FR 3086797B1 FR 1858874 A FR1858874 A FR 1858874A FR 1858874 A FR1858874 A FR 1858874A FR 3086797 B1 FR3086797 B1 FR 3086797B1
Authority
FR
France
Prior art keywords
electronic circuit
circuit including
including diodes
electrode
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1858874A
Other languages
English (en)
Other versions
FR3086797A1 (fr
Inventor
Arnaud Yvon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Tours SAS
Original Assignee
STMicroelectronics Tours SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Tours SAS filed Critical STMicroelectronics Tours SAS
Priority to FR1858874A priority Critical patent/FR3086797B1/fr
Priority to US16/583,090 priority patent/US11830873B2/en
Publication of FR3086797A1 publication Critical patent/FR3086797A1/fr
Application granted granted Critical
Publication of FR3086797B1 publication Critical patent/FR3086797B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

La présente description concerne un Dispositif électronique (100) comprenant un empilement d'une diode Schottky (123) et d'une diode bipolaire (108), connectées en parallèle par une première électrode (126) située dans une première cavité (116) et une deuxième électrode (128) située dans une deuxième cavité (118).
FR1858874A 2018-09-27 2018-09-27 Circuit electronique comprenant des diodes Active FR3086797B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1858874A FR3086797B1 (fr) 2018-09-27 2018-09-27 Circuit electronique comprenant des diodes
US16/583,090 US11830873B2 (en) 2018-09-27 2019-09-25 Electronic circuit comprising diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1858874A FR3086797B1 (fr) 2018-09-27 2018-09-27 Circuit electronique comprenant des diodes

Publications (2)

Publication Number Publication Date
FR3086797A1 FR3086797A1 (fr) 2020-04-03
FR3086797B1 true FR3086797B1 (fr) 2021-10-22

Family

ID=65494307

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1858874A Active FR3086797B1 (fr) 2018-09-27 2018-09-27 Circuit electronique comprenant des diodes

Country Status (2)

Country Link
US (1) US11830873B2 (fr)
FR (1) FR3086797B1 (fr)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181087A (en) * 1986-02-28 1993-01-19 Hitachi, Ltd. Semiconductor device and method of producing the same
US6649477B2 (en) * 2001-10-04 2003-11-18 General Semiconductor, Inc. Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
JP4487481B2 (ja) * 2002-01-16 2010-06-23 富士電機システムズ株式会社 半導体装置およびその製造方法
JP3494638B2 (ja) * 2002-05-21 2004-02-09 沖電気工業株式会社 半導体装置及び半導体装置の製造方法
JP4743631B2 (ja) * 2006-10-23 2011-08-10 三洋電機株式会社 半導体装置及びその製造方法
JP2009164158A (ja) * 2007-12-28 2009-07-23 Panasonic Corp 半導体装置及びその製造方法
US8492773B2 (en) * 2010-04-23 2013-07-23 Intersil Americas Inc. Power devices with integrated protection devices: structures and methods
JP5460504B2 (ja) * 2010-07-20 2014-04-02 次世代パワーデバイス技術研究組合 半導体装置
JP2013013224A (ja) * 2011-06-29 2013-01-17 Sumitomo Electric Ind Ltd 双方向スイッチ
US9281388B2 (en) * 2011-07-15 2016-03-08 Infineon Technologies Americas Corp. Composite semiconductor device with a SOI substrate having an integrated diode
TWI521719B (zh) * 2012-06-27 2016-02-11 財團法人工業技術研究院 雙凹溝槽式蕭基能障元件
JP2015198175A (ja) * 2014-04-01 2015-11-09 古河電気工業株式会社 窒化物半導体装置
US9741711B2 (en) * 2014-10-28 2017-08-22 Semiconductor Components Industries, Llc Cascode semiconductor device structure and method therefor
FR3043839B1 (fr) * 2015-11-17 2018-04-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode a heterojonction ayant un courant de surcharge transitoire accru
FR3077160B1 (fr) * 2018-01-19 2022-01-21 Commissariat Energie Atomique Dispositif optoelectronique comportant une grille et une cathode couplees l'une a l'autre

Also Published As

Publication number Publication date
US11830873B2 (en) 2023-11-28
FR3086797A1 (fr) 2020-04-03
US20200105749A1 (en) 2020-04-02

Similar Documents

Publication Publication Date Title
EP4235823A3 (fr) Puce de diode électroluminescente compacte
NO20082228L (no) Smartkort
BR112014001762A2 (pt) executar seletivamente um procedimento de posicionamento em um terminal de acesso baseado em um modelo de comportamento
ATE445232T1 (de) Elektronische vorrichtung mit integrierter schaltung
FR3080219B1 (fr) Dispositif electronique comprenant des puces electroniques
EP4465288A3 (fr) Dispositif électronique
FR3091019B1 (fr) Mémoire de puce électronique
FR3097365B1 (fr) Circuit électronique
FR3099607B1 (fr) Composant électronique à micrologiciel
DE602005018345D1 (de) Schaltung mit asynchroner/synchroner schnittstelle
FR3086797B1 (fr) Circuit electronique comprenant des diodes
EP1729345A3 (fr) Dispositif semi-conducteur avec une diode pour un circuit redresseur
FR3086132B1 (fr) Dispositif de synthese de frequence a rang de multiplication eleve
MX2024002005A (es) Facilitacion de la adherencia a tareas dise?adas para mantener o mejorar la salud.
FR3116138B1 (fr) Dispositif pour l'enrôlement d'une carte à microcircuit
GB914848A (en) Improvements in tunnel diode frequency changes
CN102193896A (zh) 一种具有提醒功能的计算器
EP2056458A3 (fr) Circuits logiques durcis aux radiations
FR3113990B1 (fr) Dispositif de commande d'un thyristor
CN204679646U (zh) 一种自供能鞋底定位系统
US8547163B2 (en) Temperature sensor device
FR3124666B1 (fr) Alimentation d'un dispositif électronique
CN217335116U (zh) 一种rtc电池寿命延长电路及其终端
TW200721188A (en) Internal voltage generation circuit
FR3102583B1 (fr) Dispositif à connecteur USB

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20200403

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8