FR3091027B1 - Dispositif optoélectronique - Google Patents

Dispositif optoélectronique Download PDF

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Publication number
FR3091027B1
FR3091027B1 FR1873944A FR1873944A FR3091027B1 FR 3091027 B1 FR3091027 B1 FR 3091027B1 FR 1873944 A FR1873944 A FR 1873944A FR 1873944 A FR1873944 A FR 1873944A FR 3091027 B1 FR3091027 B1 FR 3091027B1
Authority
FR
France
Prior art keywords
optoelectronic device
stack
light emitting
emitting diodes
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1873944A
Other languages
English (en)
Other versions
FR3091027A1 (fr
Inventor
Frédéric Mayer
Frédéric Mercier
Ivan-Christophe Robin
Xavier Hugon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aledia filed Critical Aledia
Priority to FR1873944A priority Critical patent/FR3091027B1/fr
Priority to TW108146378A priority patent/TWI872035B/zh
Priority to PCT/FR2019/053176 priority patent/WO2020128341A1/fr
Priority to JP2021536250A priority patent/JP7561435B2/ja
Priority to EP19848783.7A priority patent/EP3900038A1/fr
Priority to US17/414,874 priority patent/US11984549B2/en
Priority to CN201980090655.3A priority patent/CN113383416B/zh
Priority to KR1020217022446A priority patent/KR102914245B1/ko
Publication of FR3091027A1 publication Critical patent/FR3091027A1/fr
Application granted granted Critical
Publication of FR3091027B1 publication Critical patent/FR3091027B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/842—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/20—Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group H10H20/00
    • H10H29/24—Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group H10H20/00 comprising multiple light-emitting semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/857—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

Dispositif optoélectronique La présente description concerne un dispositif optoélectronique (100) comprenant un circuit intégré comprenant des diodes électroluminescentes (104), des transistors en couches minces (110), et un empilement (126) de couches isolantes électriquement, ledit empilement (126) étant situé entre les diodes électroluminescentes (104) et les transistors (110, 504), ledit empilement (126) comprenant en outre des éléments conducteurs (128, 132), entre et à travers lesdites couches isolantes, lesdits éléments conducteurs (128, 132) connectant au moins certains des transistors aux diodes électroluminescentes (104). Figure pour l'abrégé : Fig. 1
FR1873944A 2018-12-21 2018-12-21 Dispositif optoélectronique Active FR3091027B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1873944A FR3091027B1 (fr) 2018-12-21 2018-12-21 Dispositif optoélectronique
TW108146378A TWI872035B (zh) 2018-12-21 2019-12-18 光電裝置
JP2021536250A JP7561435B2 (ja) 2018-12-21 2019-12-19 光電子デバイス
EP19848783.7A EP3900038A1 (fr) 2018-12-21 2019-12-19 Dispositif optoelectronique
PCT/FR2019/053176 WO2020128341A1 (fr) 2018-12-21 2019-12-19 Dispositif optoelectronique
US17/414,874 US11984549B2 (en) 2018-12-21 2019-12-19 Optoelectronic device
CN201980090655.3A CN113383416B (zh) 2018-12-21 2019-12-19 光电器件
KR1020217022446A KR102914245B1 (ko) 2018-12-21 2019-12-19 광전자 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1873944A FR3091027B1 (fr) 2018-12-21 2018-12-21 Dispositif optoélectronique

Publications (2)

Publication Number Publication Date
FR3091027A1 FR3091027A1 (fr) 2020-06-26
FR3091027B1 true FR3091027B1 (fr) 2022-11-18

Family

ID=66542439

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1873944A Active FR3091027B1 (fr) 2018-12-21 2018-12-21 Dispositif optoélectronique

Country Status (8)

Country Link
US (1) US11984549B2 (fr)
EP (1) EP3900038A1 (fr)
JP (1) JP7561435B2 (fr)
KR (1) KR102914245B1 (fr)
CN (1) CN113383416B (fr)
FR (1) FR3091027B1 (fr)
TW (1) TWI872035B (fr)
WO (1) WO2020128341A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3082025B1 (fr) * 2018-06-04 2021-07-16 Isorg Dispositif combinant capteur d'images et un écran d'affichage organiques aptes a la détection d'empreintes digitales
FR3112902B1 (fr) 2020-07-22 2022-12-16 Aledia Dispositif optoélectronique flexible et son procédé de fabrication
FR3116381B1 (fr) 2020-11-19 2022-12-16 Commissariat Energie Atomique Procédé de fabrication d'un dispositif à LED

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101065407B1 (ko) * 2009-08-25 2011-09-16 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
KR20120039947A (ko) * 2010-10-18 2012-04-26 삼성모바일디스플레이주식회사 표시 장치 및 그 제조 방법
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
US8987765B2 (en) * 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
FR3031238B1 (fr) * 2014-12-30 2016-12-30 Aledia Dispositif optoelectronique a diodes electroluminescentes
US9793252B2 (en) * 2015-03-30 2017-10-17 Emagin Corporation Method of integrating inorganic light emitting diode with oxide thin film transistor for display applications
US10741719B2 (en) * 2016-03-12 2020-08-11 Faquir Chand Jain Quantum dot channel (QDC) quantum dot gate transistors, memories and other devices
US9941329B2 (en) * 2016-05-18 2018-04-10 Globalfoundries Inc. Light emitting diodes (LEDs) with integrated CMOS circuits
US10037981B2 (en) * 2016-05-18 2018-07-31 Globalfoundries Inc. Integrated display system with multi-color light emitting diodes (LEDs)
US10026883B2 (en) * 2016-12-20 2018-07-17 Globalfoundries Inc. Wafer bond interconnect structures
KR102571610B1 (ko) * 2017-02-13 2023-08-30 삼성디스플레이 주식회사 반도체 장치 및 이의 제조방법
TWI626738B (zh) 2017-04-06 2018-06-11 宏碁股份有限公司 顯示裝置及其製造方法
CN108109953B (zh) * 2017-12-15 2020-12-25 浙江清华柔性电子技术研究院 用于系统级封装的tsv转接板

Also Published As

Publication number Publication date
JP2022515786A (ja) 2022-02-22
KR20210104825A (ko) 2021-08-25
CN113383416B (zh) 2024-08-06
TWI872035B (zh) 2025-02-11
US20220059743A1 (en) 2022-02-24
TW202038427A (zh) 2020-10-16
US11984549B2 (en) 2024-05-14
JP7561435B2 (ja) 2024-10-04
CN113383416A (zh) 2021-09-10
FR3091027A1 (fr) 2020-06-26
EP3900038A1 (fr) 2021-10-27
KR102914245B1 (ko) 2026-01-16
WO2020128341A1 (fr) 2020-06-25

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