FR3105748B1 - Dispositif pour traitement par laser et procédé de traitement au laser - Google Patents

Dispositif pour traitement par laser et procédé de traitement au laser Download PDF

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Publication number
FR3105748B1
FR3105748B1 FR1915606A FR1915606A FR3105748B1 FR 3105748 B1 FR3105748 B1 FR 3105748B1 FR 1915606 A FR1915606 A FR 1915606A FR 1915606 A FR1915606 A FR 1915606A FR 3105748 B1 FR3105748 B1 FR 3105748B1
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FR
France
Prior art keywords
laser treatment
laser processing
laser
treatment method
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1915606A
Other languages
English (en)
Other versions
FR3105748A1 (fr
Inventor
Tiphaine Dupont
Mehdi Daanoune
Olivier Jeannin
Ivan-Christophe Robin
Florian Dupont
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1915606A priority Critical patent/FR3105748B1/fr
Application filed by Aledia filed Critical Aledia
Priority to KR1020227022957A priority patent/KR20220119630A/ko
Priority to PCT/EP2020/087242 priority patent/WO2021130136A1/fr
Priority to US17/788,259 priority patent/US20230035764A1/en
Priority to EP20824294.1A priority patent/EP4082037A1/fr
Priority to CN202080089847.5A priority patent/CN114868241A/zh
Priority to JP2022539285A priority patent/JP7691755B2/ja
Publication of FR3105748A1 publication Critical patent/FR3105748A1/fr
Application granted granted Critical
Publication of FR3105748B1 publication Critical patent/FR3105748B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/32—Bonding taking account of the properties of the material involved
    • B23K26/322—Bonding taking account of the properties of the material involved involving coated metal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Optical Integrated Circuits (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Beam Processing (AREA)

Abstract

Dispositif pour traitement par laser et procédé de traitement au laser La présente description concerne un dispositif (20) configuré pour un traitement au laser, comprenant un substrat (22) transparent pour le laser et des objets (30), chaque objet étant fixé au substrat par l'intermédiaire d'un cristal photonique (40). Figure pour l'abrégé : Fig. 2
FR1915606A 2019-12-26 2019-12-26 Dispositif pour traitement par laser et procédé de traitement au laser Active FR3105748B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1915606A FR3105748B1 (fr) 2019-12-26 2019-12-26 Dispositif pour traitement par laser et procédé de traitement au laser
PCT/EP2020/087242 WO2021130136A1 (fr) 2019-12-26 2020-12-18 Dispositif pour traitement par laser et procédé de traitement au laser
US17/788,259 US20230035764A1 (en) 2019-12-26 2020-12-18 Laser treatment device and laser treatment method
EP20824294.1A EP4082037A1 (fr) 2019-12-26 2020-12-18 Dispositif pour traitement par laser et procédé de traitement au laser
KR1020227022957A KR20220119630A (ko) 2019-12-26 2020-12-18 레이저 처리 장치 및 레이저 처리 방법
CN202080089847.5A CN114868241A (zh) 2019-12-26 2020-12-18 激光处理装置和激光处理方法
JP2022539285A JP7691755B2 (ja) 2019-12-26 2020-12-18 レーザ処理デバイス及びレーザ処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1915606A FR3105748B1 (fr) 2019-12-26 2019-12-26 Dispositif pour traitement par laser et procédé de traitement au laser
FR1915606 2019-12-26

Publications (2)

Publication Number Publication Date
FR3105748A1 FR3105748A1 (fr) 2021-07-02
FR3105748B1 true FR3105748B1 (fr) 2022-09-02

Family

ID=70918521

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1915606A Active FR3105748B1 (fr) 2019-12-26 2019-12-26 Dispositif pour traitement par laser et procédé de traitement au laser

Country Status (7)

Country Link
US (1) US20230035764A1 (fr)
EP (1) EP4082037A1 (fr)
JP (1) JP7691755B2 (fr)
KR (1) KR20220119630A (fr)
CN (1) CN114868241A (fr)
FR (1) FR3105748B1 (fr)
WO (1) WO2021130136A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3855530B1 (fr) 2020-01-24 2025-04-16 Epinovatech AB Batterie à semi-conducteurs
EP3916804A1 (fr) 2020-05-29 2021-12-01 Epinovatech AB Hemt vertical et procédé de fabrication d'un hemt vertical
EP4090139B1 (fr) 2021-05-10 2023-10-25 Epinovatech AB Dispositif convertisseur de puissance
US11908723B2 (en) * 2021-12-03 2024-02-20 International Business Machines Corporation Silicon handler with laser-release layers
EP4389692A1 (fr) * 2022-12-19 2024-06-26 Epinovatech AB Dispositif et procédé de stockage d'hydrogène

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7052941B2 (en) * 2003-06-24 2006-05-30 Sang-Yun Lee Method for making a three-dimensional integrated circuit structure
JP2005159002A (ja) * 2003-11-26 2005-06-16 Seiko Epson Corp 受光素子、光モジュール、及び光伝送装置
JP2006049855A (ja) * 2004-06-28 2006-02-16 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
US8264637B2 (en) * 2008-10-10 2012-09-11 Samsung Electronics Co., Ltd. Photonic crystal optical filter, reflective color filter, display apparatus using the reflective color filter, and method of manufacturing the reflective color filter
RU2012132819A (ru) * 2010-01-07 2014-02-27 Шарп Кабусики Кайся Фотоэлектрический преобразователь
JP5854417B2 (ja) * 2010-07-30 2016-02-09 国立大学法人京都大学 ２次元フォトニック結晶レーザ
KR101179700B1 (ko) * 2010-09-01 2012-09-04 (재)한국나노기술원 패터닝된 반도체층을 갖는 반도체 발광소자 및 그 제조방법
KR20120046930A (ko) * 2010-11-03 2012-05-11 (재)나노소자특화팹센터 패터닝된 기판을 이용한 반도체 발광소자 제조방법
JP2012222274A (ja) * 2011-04-13 2012-11-12 Nippon Telegr & Teleph Corp <Ntt> ナノピラーの作製方法
JP2015028959A (ja) * 2011-11-21 2015-02-12 シャープ株式会社 太陽電池、太陽電池パネル、太陽電池を備えた装置、及び、太陽電池パネルを備えた装置
FR3007580B1 (fr) * 2013-06-25 2016-10-21 Commissariat Energie Atomique Dispositif optoelectronique a reflectivite amelioree
FR3029015B1 (fr) * 2014-11-24 2018-03-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication
CN107112205B (zh) * 2015-01-16 2020-12-22 住友电气工业株式会社 半导体衬底及其制造方法，组合半导体衬底及其制造方法
KR102066928B1 (ko) * 2015-07-01 2020-01-16 센서 일렉트로닉 테크놀로지, 인크 기판 구조체 제거
US10950747B2 (en) * 2015-07-01 2021-03-16 Sensor Electronic Technology, Inc. Heterostructure for an optoelectronic device
JP7007053B2 (ja) * 2017-10-17 2022-01-24 株式会社ディスコ リフトオフ方法
US10892381B2 (en) * 2018-02-28 2021-01-12 Sensor Electronic Technology, Inc. Semiconductor structure with layer having protrusions
FR3079657B1 (fr) * 2018-03-29 2024-03-15 Soitec Silicon On Insulator Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure

Also Published As

Publication number Publication date
KR20220119630A (ko) 2022-08-30
US20230035764A1 (en) 2023-02-02
WO2021130136A1 (fr) 2021-07-01
FR3105748A1 (fr) 2021-07-02
JP7691755B2 (ja) 2025-06-12
CN114868241A (zh) 2022-08-05
EP4082037A1 (fr) 2022-11-02
JP2023508443A (ja) 2023-03-02

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