FR3128574B1 - Procédé d’implantation ionique dans une plaquette semiconductrice - Google Patents

Procédé d’implantation ionique dans une plaquette semiconductrice Download PDF

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Publication number
FR3128574B1
FR3128574B1 FR2111357A FR2111357A FR3128574B1 FR 3128574 B1 FR3128574 B1 FR 3128574B1 FR 2111357 A FR2111357 A FR 2111357A FR 2111357 A FR2111357 A FR 2111357A FR 3128574 B1 FR3128574 B1 FR 3128574B1
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France
Prior art keywords
semiconductor wafer
integrated circuit
ion implantation
implantation
zone
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FR2111357A
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FR3128574A1 (fr
Inventor
Julien Borrel
Alexis Gauthier
Fanny Hilario
Ludovic Berthier
Paul Dumas
Edoardo Brezza
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STMicroelectronics Crolles 2 SAS
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STMicroelectronics Crolles 2 SAS
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Priority to FR2111357A priority Critical patent/FR3128574B1/fr
Priority to US17/964,350 priority patent/US20230128033A1/en
Publication of FR3128574A1 publication Critical patent/FR3128574A1/fr
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Publication of FR3128574B1 publication Critical patent/FR3128574B1/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration

Landscapes

  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Selon un aspect il est proposé un procédé d’implantation ionique dans une plaquette semiconductrice (PS) placée dans une chambre d’implantation (CHI) sous vide, la plaquette semiconductrice (PS) présentant une zone de circuit intégré (ZCI) et une zone périphérique (ZPR) autour de cette zone de circuit intégré (ZCI), l’implantation ionique permettant d’appliquer un dopage dans des régions, dites régions d’implantation (RGI), de la zone de circuit intégré, le procédé comprenant : - une formation d’un revêtement en résine photosensible (RES) servant de masque sur la plaquette semiconductrice (PS), puis - une formation d’ouvertures dans le revêtement en résine photosensible (RES) au niveau desdites régions d’implantation (RGI) de la zone de circuit intégré et au niveau d’au moins une région (RDM) de la zone périphérique, puis - une implantation des ions (12) dans la plaquette semiconductrice (PS). Figure pour l’abrégé : Figure 5
FR2111357A 2021-10-26 2021-10-26 Procédé d’implantation ionique dans une plaquette semiconductrice Active FR3128574B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR2111357A FR3128574B1 (fr) 2021-10-26 2021-10-26 Procédé d’implantation ionique dans une plaquette semiconductrice
US17/964,350 US20230128033A1 (en) 2021-10-26 2022-10-12 Method for ion implantation in a semiconductor wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2111357 2021-10-26
FR2111357A FR3128574B1 (fr) 2021-10-26 2021-10-26 Procédé d’implantation ionique dans une plaquette semiconductrice

Publications (2)

Publication Number Publication Date
FR3128574A1 FR3128574A1 (fr) 2023-04-28
FR3128574B1 true FR3128574B1 (fr) 2025-02-28

Family

ID=80595366

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2111357A Active FR3128574B1 (fr) 2021-10-26 2021-10-26 Procédé d’implantation ionique dans une plaquette semiconductrice

Country Status (2)

Country Link
US (1) US20230128033A1 (fr)
FR (1) FR3128574B1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851691A (en) * 1982-11-19 1989-07-25 Varian Associates, Inc. Method for photoresist pretreatment prior to charged particle beam processing
JPH04249316A (ja) * 1991-02-05 1992-09-04 Fujitsu Ltd 半導体装置の製造方法
JPH05304154A (ja) * 1992-04-28 1993-11-16 Nec Corp 半導体装置
US6101971A (en) * 1998-05-13 2000-08-15 Axcelis Technologies, Inc. Ion implantation control using charge collection, optical emission spectroscopy and mass analysis
US7176051B2 (en) * 2005-05-27 2007-02-13 United Microelectronics Corp. Method of reducing charging damage to integrated circuits during semiconductor manufacturing

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Publication number Publication date
US20230128033A1 (en) 2023-04-27
FR3128574A1 (fr) 2023-04-28

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