FR96113E - Dispositif semi-conducteur. - Google Patents

Dispositif semi-conducteur.

Info

Publication number
FR96113E
FR96113E FR9496A FR96113DA FR96113E FR 96113 E FR96113 E FR 96113E FR 9496 A FR9496 A FR 9496A FR 96113D A FR96113D A FR 96113DA FR 96113 E FR96113 E FR 96113E
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR9496A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of FR96113E publication Critical patent/FR96113E/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR9496A 1967-12-06 Dispositif semi-conducteur. Expired FR96113E (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68848867A 1967-12-06 1967-12-06

Publications (1)

Publication Number Publication Date
FR96113E true FR96113E (fr) 1972-05-19

Family

ID=24764627

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9496A Expired FR96113E (fr) 1967-12-06 Dispositif semi-conducteur.

Country Status (4)

Country Link
US (1) US3593068A (fr)
DE (1) DE1810322C3 (fr)
FR (1) FR96113E (fr)
GB (1) GB1176599A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3786316A (en) * 1970-05-15 1974-01-15 Sperry Rand Corp High frequency diode energy transducer and method of manufacture
JPS5232234B2 (fr) * 1971-10-11 1977-08-19
JPS5138879A (fr) * 1974-09-27 1976-03-31 Hitachi Ltd
JPS5165585A (fr) * 1974-12-04 1976-06-07 Hitachi Ltd
JPS5811750B2 (ja) * 1979-06-04 1983-03-04 株式会社日立製作所 高耐圧抵抗素子
US4374392A (en) * 1980-11-25 1983-02-15 Rca Corporation Monolithic integrated circuit interconnection and fabrication method
JPS57176746A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit and manufacture thereof
EP0094078B1 (fr) * 1982-05-11 1988-11-02 Nec Corporation Elément électrostrictif multicouche résistant à l'application répétée d'impulsions
US5728594A (en) * 1994-11-02 1998-03-17 Texas Instruments Incorporated Method of making a multiple transistor integrated circuit with thick copper interconnect
US6150722A (en) * 1994-11-02 2000-11-21 Texas Instruments Incorporated Ldmos transistor with thick copper interconnect
US6372586B1 (en) 1995-10-04 2002-04-16 Texas Instruments Incorporated Method for LDMOS transistor with thick copper interconnect
KR100237679B1 (ko) * 1995-12-30 2000-01-15 윤종용 저항 차를 줄이는 팬 아웃부를 가지는 액정 표시 패널
US6140702A (en) * 1996-05-31 2000-10-31 Texas Instruments Incorporated Plastic encapsulation for integrated circuits having plated copper top surface level interconnect
US6140150A (en) * 1997-05-28 2000-10-31 Texas Instruments Incorporated Plastic encapsulation for integrated circuits having plated copper top surface level interconnect
US6342442B1 (en) * 1998-11-20 2002-01-29 Agere Systems Guardian Corp. Kinetically controlled solder bonding
JP2018044811A (ja) * 2016-09-13 2018-03-22 株式会社村田製作所 ピエゾ抵抗型センサ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3063129A (en) * 1956-08-08 1962-11-13 Bendix Corp Transistor
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
US3355636A (en) * 1965-06-29 1967-11-28 Rca Corp High power, high frequency transistor
US3457631A (en) * 1965-11-09 1969-07-29 Gen Electric Method of making a high frequency transistor structure

Also Published As

Publication number Publication date
DE1810322B2 (de) 1979-04-05
GB1176599A (en) 1970-01-07
US3593068A (en) 1971-07-13
DE1810322C3 (de) 1979-12-06
DE1810322A1 (de) 1970-03-19

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