HK71287A - An integrated injection logic semiconductor integrated circuit device - Google Patents

An integrated injection logic semiconductor integrated circuit device Download PDF

Info

Publication number
HK71287A
HK71287A HK712/87A HK71287A HK71287A HK 71287 A HK71287 A HK 71287A HK 712/87 A HK712/87 A HK 712/87A HK 71287 A HK71287 A HK 71287A HK 71287 A HK71287 A HK 71287A
Authority
HK
Hong Kong
Prior art keywords
layer
isolating
circuit device
blocks
logic semiconductor
Prior art date
Application number
HK712/87A
Other languages
English (en)
Inventor
Ogura Setsuo
Kondoh Shizuo
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Publication of HK71287A publication Critical patent/HK71287A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
HK712/87A 1982-01-25 1987-10-01 An integrated injection logic semiconductor integrated circuit device HK71287A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008932A JPS58127363A (ja) 1982-01-25 1982-01-25 半導体集積回路装置

Publications (1)

Publication Number Publication Date
HK71287A true HK71287A (en) 1987-10-09

Family

ID=11706432

Family Applications (2)

Application Number Title Priority Date Filing Date
HK712/87A HK71287A (en) 1982-01-25 1987-10-01 An integrated injection logic semiconductor integrated circuit device
HK706/87A HK70687A (en) 1982-01-25 1987-10-01 Semiconductor integrated circuit device

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK706/87A HK70687A (en) 1982-01-25 1987-10-01 Semiconductor integrated circuit device

Country Status (9)

Country Link
JP (1) JPS58127363A (mo)
KR (1) KR910002036B1 (mo)
DE (1) DE3302206A1 (mo)
FR (1) FR2520555B1 (mo)
GB (2) GB2113915B (mo)
HK (2) HK71287A (mo)
IT (1) IT1160470B (mo)
MY (1) MY8700613A (mo)
SG (1) SG36587G (mo)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3926011B2 (ja) 1997-12-24 2007-06-06 株式会社ルネサステクノロジ 半導体装置の設計方法
JP4292668B2 (ja) * 2000-01-31 2009-07-08 富士ゼロックス株式会社 発光サイリスタアレイ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443176A (en) * 1966-03-31 1969-05-06 Ibm Low resistivity semiconductor underpass connector and fabrication method therefor
DE1949484B2 (de) * 1969-10-01 1978-02-23 Ibm Deutschland Gmbh, 7000 Stuttgart Leitungskreuzung fuer monolithisch integrierte halbleiterschaltungen und deren verwendung in einer speichermatrix
FR2244262B1 (mo) * 1973-09-13 1978-09-29 Radiotechnique Compelec
DE2514466B2 (de) * 1975-04-03 1977-04-21 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte halbleiterschaltung
JPS5264830A (en) * 1975-11-25 1977-05-28 Hitachi Ltd Power source supply system of integrated injection logical circuit
NL7700420A (nl) * 1977-01-17 1978-07-19 Philips Nv Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
DE3143565A1 (de) * 1981-11-03 1983-05-11 International Microcircuits Inc., 95051 Santa Clara, Calif. Integrierte schaltung

Also Published As

Publication number Publication date
JPS58127363A (ja) 1983-07-29
GB2113915B (en) 1985-11-20
JPH0334661B2 (mo) 1991-05-23
MY8700613A (en) 1987-12-31
IT1160470B (it) 1987-03-11
KR840003536A (ko) 1984-09-08
FR2520555B1 (fr) 1987-02-20
GB8403188D0 (en) 1984-03-14
SG36587G (en) 1987-07-24
GB2133622B (en) 1985-11-20
GB2133622A (en) 1984-07-25
DE3302206A1 (de) 1983-08-04
IT8319236A0 (it) 1983-01-21
FR2520555A1 (fr) 1983-07-29
KR910002036B1 (ko) 1991-03-30
GB2113915A (en) 1983-08-10
GB8301731D0 (en) 1983-02-23
HK70687A (en) 1987-10-09

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)