IL131534A - Semiconductor element, in particular a solar cell and process for manufacturing the same - Google Patents

Semiconductor element, in particular a solar cell and process for manufacturing the same

Info

Publication number: IL131534A
Authority: IL; Israel
Prior art keywords: pyrite; accordance; semiconductor; semiconductor component; base material
Prior art date: 1998-04-29

Application number

IL13153498A

Other languages

English (en)

Other versions

IL131534A0 (en

Original Assignee

LA VECCHIA Nunzio

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-04-29

Filing date

1998-10-23

Publication date

2004-06-01

1998-10-23 Application filed by LA VECCHIA Nunzio filed Critical LA VECCHIA Nunzio

2001-01-28 Publication of IL131534A0 publication Critical patent/IL131534A0/xx

2004-06-01 Publication of IL131534A publication Critical patent/IL131534A/en

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 88
238000000034 method Methods 0.000 title claims description 34
238000004519 manufacturing process Methods 0.000 title abstract description 12
229910052683 pyrite Inorganic materials 0.000 claims abstract description 72
NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 claims abstract description 70
239000000463 material Substances 0.000 claims abstract description 55
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 22
239000013078 crystal Substances 0.000 claims abstract description 16
229910052960 marcasite Inorganic materials 0.000 claims abstract description 14
229910052742 iron Inorganic materials 0.000 claims abstract description 9
239000011028 pyrite Substances 0.000 claims description 56
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 21
229910052796 boron Inorganic materials 0.000 claims description 21
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 19
239000000203 mixture Substances 0.000 claims description 11
239000000126 substance Substances 0.000 claims description 11
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 8
239000005864 Sulphur Substances 0.000 claims description 8
238000004140 cleaning Methods 0.000 claims description 4
239000010409 thin film Substances 0.000 claims description 4
239000007792 gaseous phase Substances 0.000 claims description 3
238000005468 ion implantation Methods 0.000 claims description 3
238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
238000005118 spray pyrolysis Methods 0.000 claims description 2
239000006163 transport media Substances 0.000 claims description 2
108091006631 SLC13A4 Proteins 0.000 claims 1
102100035209 Solute carrier family 13 member 4 Human genes 0.000 claims 1
238000001027 hydrothermal synthesis Methods 0.000 claims 1
238000005546 reactive sputtering Methods 0.000 claims 1
XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 1
238000007704 wet chemistry method Methods 0.000 claims 1
150000001875 compounds Chemical class 0.000 description 7
239000002019 doping agent Substances 0.000 description 6
230000008901 benefit Effects 0.000 description 5
239000004020 conductor Substances 0.000 description 4
230000005855 radiation Effects 0.000 description 4
230000032258 transport Effects 0.000 description 4
238000010521 absorption reaction Methods 0.000 description 3
239000012535 impurity Substances 0.000 description 3
239000003446 ligand Substances 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
229910001218 Gallium arsenide Inorganic materials 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
239000002800 charge carrier Substances 0.000 description 2
239000000460 chlorine Substances 0.000 description 2
229910052801 chlorine Inorganic materials 0.000 description 2
230000001419 dependent effect Effects 0.000 description 2
238000000151 deposition Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000012212 insulator Substances 0.000 description 2
239000011572 manganese Substances 0.000 description 2
238000001451 molecular beam epitaxy Methods 0.000 description 2
239000005445 natural material Substances 0.000 description 2
239000011574 phosphorus Substances 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000000843 powder Substances 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
239000011734 sodium Substances 0.000 description 2
239000007787 solid Substances 0.000 description 2
238000003786 synthesis reaction Methods 0.000 description 2
MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
229910001369 Brass Inorganic materials 0.000 description 1
WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
229910021576 Iron(III) bromide Inorganic materials 0.000 description 1
PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
238000005263 ab initio calculation Methods 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
239000010951 brass Substances 0.000 description 1
229910052794 bromium Inorganic materials 0.000 description 1
CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
229910052980 cadmium sulfide Inorganic materials 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
229910017052 cobalt Inorganic materials 0.000 description 1
239000010941 cobalt Substances 0.000 description 1
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
230000002301 combined effect Effects 0.000 description 1
BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical compound [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
239000010408 film Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
238000002513 implantation Methods 0.000 description 1
XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 description 1
-1 iron-sulphur compound Chemical class 0.000 description 1
229910052748 manganese Inorganic materials 0.000 description 1
238000005259 measurement Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
239000004570 mortar (masonry) Substances 0.000 description 1
150000002902 organometallic compounds Chemical class 0.000 description 1
239000002245 particle Substances 0.000 description 1
230000035515 penetration Effects 0.000 description 1
231100000289 photo-effect Toxicity 0.000 description 1
230000005610 quantum mechanics Effects 0.000 description 1
238000002128 reflection high energy electron diffraction Methods 0.000 description 1
239000011347 resin Substances 0.000 description 1
229920005989 resin Polymers 0.000 description 1
239000011435 rock Substances 0.000 description 1
238000007789 sealing Methods 0.000 description 1
238000000926 separation method Methods 0.000 description 1
229910052708 sodium Inorganic materials 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
239000000758 substrate Substances 0.000 description 1
150000004763 sulfides Chemical class 0.000 description 1
229910021653 sulphate ion Inorganic materials 0.000 description 1
229910052714 tellurium Inorganic materials 0.000 description 1
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
238000002207 thermal evaporation Methods 0.000 description 1
238000007669 thermal treatment Methods 0.000 description 1
239000012780 transparent material Substances 0.000 description 1
FEONEKOZSGPOFN-UHFFFAOYSA-K tribromoiron Chemical compound Br[Fe](Br)Br FEONEKOZSGPOFN-UHFFFAOYSA-K 0.000 description 1
238000009834 vaporization Methods 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy

Landscapes

Photovoltaic Devices (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Recrystallisation Techniques (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Chemical Vapour Deposition (AREA)

IL13153498A 1998-04-29 1998-10-23 Semiconductor element, in particular a solar cell and process for manufacturing the same IL131534A (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
EP98810382A EP0954033A1 (fr)	1998-04-29	1998-04-29	Dispositif semi-conducteur, en particulier une cellule solaire, ayant une couche de pyrite et méthode de fabrication
PCT/CH1998/000455 WO1999056325A1 (fr)	1998-04-29	1998-10-23	Composant a semi-conducteur, notamment pile solaire et procede permettant de l'obtenir

Publications (2)

Publication Number	Publication Date
IL131534A0 IL131534A0 (en)	2001-01-28
IL131534A true IL131534A (en)	2004-06-01

Family

ID=8236060

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IL13153498A IL131534A (en)	1998-04-29	1998-10-23	Semiconductor element, in particular a solar cell and process for manufacturing the same

Country Status (26)

Country	Link
US (1)	US6635942B2 (fr)
EP (2)	EP0954033A1 (fr)
JP (1)	JP3874429B2 (fr)
KR (1)	KR100613524B1 (fr)
CN (1)	CN1218405C (fr)
AR (1)	AR019111A1 (fr)
AT (1)	ATE287576T1 (fr)
AU (1)	AU756671B2 (fr)
BG (1)	BG64069B1 (fr)
BR (1)	BR9808074B1 (fr)
CA (1)	CA2275298C (fr)
CZ (1)	CZ298589B6 (fr)
DE (1)	DE59812504D1 (fr)
DK (1)	DK1032949T3 (fr)
ES (1)	ES2239406T3 (fr)
HU (1)	HU227655B1 (fr)
IL (1)	IL131534A (fr)
MY (1)	MY124379A (fr)
NO (1)	NO993552L (fr)
NZ (1)	NZ336848A (fr)
PL (1)	PL192742B1 (fr)
PT (1)	PT1032949E (fr)
RU (1)	RU2219620C2 (fr)
TR (1)	TR199903266T1 (fr)
TW (1)	TW434915B (fr)
WO (1)	WO1999056325A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1300375C (zh) *	2004-12-07	2007-02-14	浙江大学	电沉积氧化及热硫化合成二硫化铁薄膜的方法
JP4938314B2 (ja) *	2006-01-16	2012-05-23	シャープ株式会社	光電変換装置および半導体接合素子の製造方法
US8093684B2 (en) *	2006-01-16	2012-01-10	Sharp Kabushiki Kaisha	Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same
US20110240108A1 (en)	2010-04-02	2011-10-06	Matt Law	Method To Synthesize Colloidal Iron Pyrite (FeS2) Nanocrystals And Fabricate Iron Pyrite Thin Film Solar Cells
US10680125B2 (en) *	2011-11-15	2020-06-09	Nutech Ventures	Iron pyrite nanocrystals
JP5377732B2 (ja) *	2012-09-14	2013-12-25	シャープ株式会社	半導体、ｐ型半導体、半導体接合素子、ｐｎ接合素子、および光電変換装置
WO2014209834A2 (fr) *	2013-06-24	2014-12-31	Arizona Board Of Regents On Behalf Of Arizona State University	Procédé d'obtention de pyrite
US9705012B2 (en) *	2014-03-18	2017-07-11	The United States Of America, As Represented By The Secretary Of The Navy	Method of passivating an iron disulfide surface via encapsulation in zinc sulfide
US10181598B2 (en)	2015-01-05	2019-01-15	University Of Florida Resarch Foundation, Inc.	Lithium ion battery cathodes, methods of making, and methods of use thereof
CN105140338B (zh) *	2015-07-29	2017-07-04	云南师范大学	一种低成本FeS2薄膜太阳电池的制备方法
EP3418717A1 (fr)	2017-06-23	2018-12-26	Cellix Limited	Dispositif microfluidique pour séparer des particules
EP3418719A1 (fr)	2017-06-23	2018-12-26	Cellix Limited	Système et procédé pour le identification améliorée de particules ou de cellules
EP3418721A1 (fr)	2017-06-23	2018-12-26	Cellix Limited	Puce microfluide

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3852563A (en) *	1974-02-01	1974-12-03	Hewlett Packard Co	Thermal printing head
US4131486A (en) *	1977-01-19	1978-12-26	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	Back wall solar cell
US4710786A (en) *	1978-03-16	1987-12-01	Ovshinsky Stanford R	Wide band gap semiconductor alloy material
JPS59115574A (ja) *	1982-12-23	1984-07-04	Semiconductor Energy Lab Co Ltd	光電変換装置作製方法
US4589918A (en) *	1984-03-28	1986-05-20	National Research Institute For Metals	Thermal shock resistant thermoelectric material
DE3526910A1 (de) *	1984-07-27	1986-02-13	Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin	Photoaktive pyritschicht, verfahren zu deren herstellung und verwendung derartiger pyritschichten
CA1265922A (fr) *	1984-07-27	1990-02-20	Helmut Tributsch	Couche photo-active de pyrite, sa preparation et son emploi
US4766471A (en) *	1986-01-23	1988-08-23	Energy Conversion Devices, Inc.	Thin film electro-optical devices
FR2694451B1 (fr) *	1992-07-29	1994-09-30	Asulab Sa	Cellule photovoltaïque.
CA2110097C (fr) *	1992-11-30	2002-07-09	Soichiro Kawakami	Batterie secondaire

1998
- 1998-04-29 EP EP98810382A patent/EP0954033A1/fr not_active Withdrawn
- 1998-10-23 IL IL13153498A patent/IL131534A/en not_active IP Right Cessation
- 1998-10-23 RU RU99118904/28A patent/RU2219620C2/ru not_active IP Right Cessation
- 1998-10-23 HU HU0004391A patent/HU227655B1/hu not_active IP Right Cessation
- 1998-10-23 PT PT98948658T patent/PT1032949E/pt unknown
- 1998-10-23 AT AT98948658T patent/ATE287576T1/de active
- 1998-10-23 CA CA002275298A patent/CA2275298C/fr not_active Expired - Fee Related
- 1998-10-23 PL PL337092A patent/PL192742B1/pl unknown
- 1998-10-23 US US09/319,772 patent/US6635942B2/en not_active Expired - Lifetime
- 1998-10-23 CN CN988024780A patent/CN1218405C/zh not_active Expired - Fee Related
- 1998-10-23 JP JP54086599A patent/JP3874429B2/ja not_active Expired - Fee Related
- 1998-10-23 WO PCT/CH1998/000455 patent/WO1999056325A1/fr not_active Ceased
- 1998-10-23 AU AU95275/98A patent/AU756671B2/en not_active Ceased
- 1998-10-23 BR BRPI9808074-1A patent/BR9808074B1/pt not_active IP Right Cessation
- 1998-10-23 EP EP98948658A patent/EP1032949B1/fr not_active Expired - Lifetime
- 1998-10-23 TR TR1999/03266T patent/TR199903266T1/xx unknown
- 1998-10-23 NZ NZ336848A patent/NZ336848A/en not_active IP Right Cessation
- 1998-10-23 ES ES98948658T patent/ES2239406T3/es not_active Expired - Lifetime
- 1998-10-23 DK DK98948658T patent/DK1032949T3/da active
- 1998-10-23 DE DE59812504T patent/DE59812504D1/de not_active Expired - Lifetime
- 1998-10-23 CZ CZ0150499A patent/CZ298589B6/cs not_active IP Right Cessation
- 1998-10-23 KR KR1019997006817A patent/KR100613524B1/ko not_active Expired - Fee Related
1999
- 1999-04-26 MY MYPI99001623A patent/MY124379A/en unknown
- 1999-04-27 AR ARP990101934A patent/AR019111A1/es active IP Right Grant
- 1999-04-28 TW TW088106833A patent/TW434915B/zh not_active IP Right Cessation
- 1999-07-20 NO NO993552A patent/NO993552L/no not_active Application Discontinuation
- 1999-09-01 BG BG103706A patent/BG64069B1/bg unknown

Also Published As

Publication number	Publication date
EP1032949B1 (fr)	2005-01-19
BG103706A (bg)	2000-05-31
PL192742B1 (pl)	2006-12-29
DE59812504D1 (de)	2005-02-24
CA2275298A1 (fr)	1999-10-29
EP1032949A1 (fr)	2000-09-06
PL337092A1 (en)	2000-07-31
BG64069B1 (bg)	2003-11-28
AR019111A1 (es)	2001-12-26
DK1032949T3 (da)	2005-05-23
JP3874429B2 (ja)	2007-01-31
CN1253665A (zh)	2000-05-17
AU9527598A (en)	1999-11-16
JP2002516651A (ja)	2002-06-04
KR100613524B1 (ko)	2006-08-16
US6635942B2 (en)	2003-10-21
BR9808074B1 (pt)	2010-02-09
CA2275298C (fr)	2005-07-19
EP0954033A1 (fr)	1999-11-03
CZ150499A3 (cs)	2000-05-17
BR9808074C2 (pt)	2000-09-05
KR20000070571A (ko)	2000-11-25
IL131534A0 (en)	2001-01-28
NO993552L (no)	1999-11-04
RU2219620C2 (ru)	2003-12-20
ES2239406T3 (es)	2005-09-16
PT1032949E (pt)	2005-06-30
HUP0004391A2 (en)	2001-03-28
WO1999056325A1 (fr)	1999-11-04
US20030107099A1 (en)	2003-06-12
CZ298589B6 (cs)	2007-11-14
AU756671B2 (en)	2003-01-23
TR199903266T1 (xx)	2002-01-21
ATE287576T1 (de)	2005-02-15
NO993552D0 (no)	1999-07-20
NZ336848A (en)	2001-10-26
TW434915B (en)	2001-05-16
HU227655B1 (en)	2011-10-28
BR9808074A (pt)	2000-03-28
MY124379A (en)	2006-06-30
CN1218405C (zh)	2005-09-07
HUP0004391A3 (en)	2004-01-28

Legal Events

Date	Code	Title
2004-11-10	FF	Patent granted
2005-02-20	KB	Patent renewed
2009-06-15	KB	Patent renewed
2013-05-30	MM9K	Patent not in force due to non-payment of renewal fees

Publication	Publication Date	Title
Makino et al.	2001	Band gap engineering based on Mg x Zn 1− x O and Cd y Zn 1− y O ternary alloy films
CA2275298C (fr)	2005-07-19	Composante semiconductrice, une pile solaire plus particulierement et son procede de fabrication
JP4083486B2 (ja)	2008-04-30	ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
Farrow	1983	The stabilization of metastable phases by epitaxy
Wang et al.	2021	Binary copper oxides as photovoltaic absorbers: recent progress in materials and applications
Zhang et al.	2022	Intrinsic defects and the influences on electrical transport properties in quaternary diamond-like compounds: Cd2Cu3In3Te8 as an example
Holloway et al.	1982	Lead strontium sulfide and lead calcium sulfide, two new alloy semiconductors
Yamaguchi et al.	1991	Thin films of CuInSe2 produced by RF sputtering with intentional oxygen doping
RU99118904A (ru)	2001-07-27	Полупроводниковый компонент, в частности, солнечный элемент, и способ его изготовления
Dinan et al.	1985	Heteroepitaxial growth of ZnCdTe by molecular beam epitaxy
Cheng et al.	2019	Fabrication of tunable n-Zn1-xCdxO/p-GaN heterojunction light-emitting diodes
Aristov et al.	1991	Anomalous pinning of the Fermi level at the InAs (110)-Cu interface obtained at 10 K
Chichibu et al.	1994	Growth of Cu (AlxGa1− x) SSe pentenary alloy crystals by iodine chemical vapor transport method
MXPA99008281A (en)	2000-06-01	Semiconductor element, especially a solar cell, and method for the production thereof
He et al.	2002	Structural and optical characterization of RF reactively sputtered CuInS2 thin films
Kumar et al.	2014	Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films
JPS6270290A (ja)	1987-03-31	半導体の製造方法
Contreras et al.	1997	Thin-film polycrystalline Ga 1− x In x Sb materials
Zhao et al.	2016	BiCuSeO: A promising thermoelectric material
Kaminska et al.	2005	Transparent p-ZnO by oxidation of Zn-based compounds
Maeda	2011	Light emission from β-FeSi2.
Taguchi	1998	LUMINESCENCE ASSOCIATED WITH DEFECTS
Mar	1992	Optical properties of the wide bandgap II–VI semiconductors
Han	2007	Development of contact materials for flexible electronics
Gouldey	2010	The Effect of Growth Method on GaN Films and Their Interfaces with CdTe and CdS