IL132017A0 - Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation - Google Patents
Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiationInfo
- Publication number
- IL132017A0 IL132017A0 IL13201798A IL13201798A IL132017A0 IL 132017 A0 IL132017 A0 IL 132017A0 IL 13201798 A IL13201798 A IL 13201798A IL 13201798 A IL13201798 A IL 13201798A IL 132017 A0 IL132017 A0 IL 132017A0
- Authority
- IL
- Israel
- Prior art keywords
- integration
- polymers
- low
- beam radiation
- controlled electron
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H10P14/6926—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
- H10P14/6539—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
- H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4110497P | 1997-03-24 | 1997-03-24 | |
| US09/028,465 US6080526A (en) | 1997-03-24 | 1998-02-24 | Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation |
| PCT/US1998/004560 WO1998043294A1 (fr) | 1997-03-24 | 1998-03-09 | Integration de polymeres a constante dielectrique faible dans des dielectriques d'interconnexion, au moyen d'un rayonnement par faisceau electronique regule |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL132017A0 true IL132017A0 (en) | 2001-03-19 |
Family
ID=26703725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL13201798A IL132017A0 (en) | 1997-03-24 | 1998-03-09 | Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6080526A (fr) |
| EP (1) | EP0970519B1 (fr) |
| JP (1) | JP3276963B2 (fr) |
| KR (1) | KR100477455B1 (fr) |
| CN (1) | CN1113408C (fr) |
| CA (1) | CA2284760A1 (fr) |
| DE (1) | DE69836009D1 (fr) |
| IL (1) | IL132017A0 (fr) |
| WO (1) | WO1998043294A1 (fr) |
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| US5939334A (en) * | 1997-05-22 | 1999-08-17 | Sharp Laboratories Of America, Inc. | System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides |
-
1998
- 1998-02-24 US US09/028,465 patent/US6080526A/en not_active Expired - Fee Related
- 1998-03-09 IL IL13201798A patent/IL132017A0/xx unknown
- 1998-03-09 CN CN98805439A patent/CN1113408C/zh not_active Expired - Fee Related
- 1998-03-09 CA CA002284760A patent/CA2284760A1/fr not_active Abandoned
- 1998-03-09 EP EP98911525A patent/EP0970519B1/fr not_active Expired - Lifetime
- 1998-03-09 DE DE69836009T patent/DE69836009D1/de not_active Expired - Lifetime
- 1998-03-09 WO PCT/US1998/004560 patent/WO1998043294A1/fr not_active Ceased
- 1998-03-09 KR KR10-1999-7008771A patent/KR100477455B1/ko not_active Expired - Fee Related
- 1998-03-09 JP JP54573798A patent/JP3276963B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69836009D1 (de) | 2006-11-09 |
| EP0970519B1 (fr) | 2006-09-27 |
| CN1113408C (zh) | 2003-07-02 |
| US6080526A (en) | 2000-06-27 |
| CA2284760A1 (fr) | 1998-10-01 |
| JP2000511006A (ja) | 2000-08-22 |
| WO1998043294A1 (fr) | 1998-10-01 |
| JP3276963B2 (ja) | 2002-04-22 |
| KR100477455B1 (ko) | 2005-03-23 |
| EP0970519A1 (fr) | 2000-01-12 |
| CN1257610A (zh) | 2000-06-21 |
| KR20010005703A (ko) | 2001-01-15 |
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