IL133722A - Methods and apparatus for improving microloading while etching a substrate - Google Patents

Methods and apparatus for improving microloading while etching a substrate

Info

Publication number
IL133722A
IL133722A IL13372298A IL13372298A IL133722A IL 133722 A IL133722 A IL 133722A IL 13372298 A IL13372298 A IL 13372298A IL 13372298 A IL13372298 A IL 13372298A IL 133722 A IL133722 A IL 133722A
Authority
IL
Israel
Prior art keywords
microloading
data set
power supply
power
trench width
Prior art date
Application number
IL13372298A
Other languages
English (en)
Other versions
IL133722A0 (en
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of IL133722A0 publication Critical patent/IL133722A0/xx
Publication of IL133722A publication Critical patent/IL133722A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IL13372298A 1997-06-27 1998-06-24 Methods and apparatus for improving microloading while etching a substrate IL133722A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/883,860 US6087266A (en) 1997-06-27 1997-06-27 Methods and apparatus for improving microloading while etching a substrate
PCT/US1998/013443 WO1999000832A1 (fr) 1997-06-27 1998-06-24 Procede et dispositif permettant d'ameliorer la microcharge au cours de la gravure d'un substrat

Publications (2)

Publication Number Publication Date
IL133722A0 IL133722A0 (en) 2001-04-30
IL133722A true IL133722A (en) 2003-05-29

Family

ID=25383476

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13372298A IL133722A (en) 1997-06-27 1998-06-24 Methods and apparatus for improving microloading while etching a substrate

Country Status (9)

Country Link
US (1) US6087266A (fr)
EP (1) EP0993685B1 (fr)
JP (1) JP4384731B2 (fr)
KR (1) KR100542665B1 (fr)
AT (1) ATE371264T1 (fr)
DE (1) DE69838292T2 (fr)
IL (1) IL133722A (fr)
TW (1) TW447038B (fr)
WO (1) WO1999000832A1 (fr)

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US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7303982B2 (en) 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7479456B2 (en) 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US6492281B1 (en) * 2000-09-22 2002-12-10 Advanced Micro Devices, Inc. Method of fabricating conductor structures with metal comb bridging avoidance
US6495469B1 (en) 2001-12-03 2002-12-17 Taiwan Semiconductor Manufacturing Company High selectivity, low etch depth micro-loading process for non stop layer damascene etch
WO2004025343A1 (fr) * 2002-09-11 2004-03-25 Fujitsu Limited Dispositif optique et procede de production afferent
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7428915B2 (en) 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7767508B2 (en) * 2006-10-16 2010-08-03 Advanced Micro Devices, Inc. Method for forming offset spacers for semiconductor device arrangements
CN102420124B (zh) * 2011-05-26 2014-04-02 上海华力微电子有限公司 一种介质层刻蚀方法
US10069490B2 (en) * 2016-02-02 2018-09-04 Globalfoundries Inc. Method, apparatus and system for voltage compensation in a semiconductor wafer

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US4267012A (en) * 1979-04-30 1981-05-12 Fairchild Camera & Instrument Corp. Process for patterning metal connections on a semiconductor structure by using a tungsten-titanium etch resistant layer
US4740485A (en) * 1986-07-22 1988-04-26 Monolithic Memories, Inc. Method for forming a fuse
US4878994A (en) * 1987-07-16 1989-11-07 Texas Instruments Incorporated Method for etching titanium nitride local interconnects
DE3842758A1 (de) * 1988-12-19 1990-06-21 Siemens Ag Verfahren zum aetzen einer dreilagigen verdrahtungsebene bei der herstellung integrierter halbleiterschaltungen
JP2528962B2 (ja) * 1989-02-27 1996-08-28 株式会社日立製作所 試料処理方法及び装置
US5429070A (en) * 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4980018A (en) * 1989-11-14 1990-12-25 Intel Corporation Plasma etching process for refractory metal vias
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US5326427A (en) * 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
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US5387556A (en) * 1993-02-24 1995-02-07 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub.2
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US5904862A (en) * 1996-06-26 1999-05-18 Lam Research Corporation Methods for etching borophosphosilicate glass
US5883007A (en) * 1996-12-20 1999-03-16 Lam Research Corporation Methods and apparatuses for improving photoresist selectivity and reducing etch rate loading

Also Published As

Publication number Publication date
DE69838292T2 (de) 2008-05-15
JP4384731B2 (ja) 2009-12-16
WO1999000832A1 (fr) 1999-01-07
US6087266A (en) 2000-07-11
KR100542665B1 (ko) 2006-01-12
JP2002507328A (ja) 2002-03-05
KR20010014077A (ko) 2001-02-26
DE69838292D1 (de) 2007-10-04
IL133722A0 (en) 2001-04-30
EP0993685A1 (fr) 2000-04-19
EP0993685B1 (fr) 2007-08-22
ATE371264T1 (de) 2007-09-15
TW447038B (en) 2001-07-21

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