IL148680A0 - Architecture, method(s) and circuitry for low power memories - Google Patents

Architecture, method(s) and circuitry for low power memories

Info

Publication number
IL148680A0
IL148680A0 IL14868000A IL14868000A IL148680A0 IL 148680 A0 IL148680 A0 IL 148680A0 IL 14868000 A IL14868000 A IL 14868000A IL 14868000 A IL14868000 A IL 14868000A IL 148680 A0 IL148680 A0 IL 148680A0
Authority
IL
Israel
Prior art keywords
approximately
providing
operating current
maximum average
average operating
Prior art date
Application number
IL14868000A
Other languages
English (en)
Original Assignee
Cypress Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cypress Semiconductor Corp filed Critical Cypress Semiconductor Corp
Publication of IL148680A0 publication Critical patent/IL148680A0/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Electronic Switches (AREA)
  • Channel Selection Circuits, Automatic Tuning Circuits (AREA)
  • Power Sources (AREA)
IL14868000A 1999-09-17 2000-09-15 Architecture, method(s) and circuitry for low power memories IL148680A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/398,735 US6163495A (en) 1999-09-17 1999-09-17 Architecture, method(s) and circuitry for low power memories
PCT/US2000/025374 WO2001020610A1 (en) 1999-09-17 2000-09-15 Architecture, method(s) and circuitry for low power memories

Publications (1)

Publication Number Publication Date
IL148680A0 true IL148680A0 (en) 2002-09-12

Family

ID=23576591

Family Applications (2)

Application Number Title Priority Date Filing Date
IL14868000A IL148680A0 (en) 1999-09-17 2000-09-15 Architecture, method(s) and circuitry for low power memories
IL148680A IL148680A (en) 1999-09-17 2002-03-13 Architecture, methods and circuits for low energy memories

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL148680A IL148680A (en) 1999-09-17 2002-03-13 Architecture, methods and circuits for low energy memories

Country Status (10)

Country Link
US (3) US6163495A (de)
EP (1) EP1214713B1 (de)
JP (1) JP5105680B2 (de)
KR (1) KR100765157B1 (de)
AT (1) ATE364228T1 (de)
AU (1) AU7492100A (de)
CA (1) CA2384862A1 (de)
DE (1) DE60035115T2 (de)
IL (2) IL148680A0 (de)
WO (1) WO2001020610A1 (de)

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US6163495A (en) * 1999-09-17 2000-12-19 Cypress Semiconductor Corp. Architecture, method(s) and circuitry for low power memories
US6530040B1 (en) * 1999-09-22 2003-03-04 Cypress Semiconductor Corp. Parallel test in asynchronous memory with single-ended output path
US8164362B2 (en) * 2000-02-02 2012-04-24 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US6603712B2 (en) 2000-02-02 2003-08-05 Broadcom Corporation High precision delay measurement circuit
US6535025B2 (en) 2000-02-02 2003-03-18 Broadcom Corp. Sense amplifier with offset cancellation and charge-share limited swing drivers
US6414899B2 (en) * 2000-02-02 2002-07-02 Broadcom Corporation Limited swing driver circuit
US7173867B2 (en) * 2001-02-02 2007-02-06 Broadcom Corporation Memory redundancy circuit techniques
US6724681B2 (en) * 2000-02-02 2004-04-20 Broadcom Corporation Asynchronously-resettable decoder with redundancy
US6611465B2 (en) * 2000-02-02 2003-08-26 Broadcom Corporation Diffusion replica delay circuit
US6411557B2 (en) * 2000-02-02 2002-06-25 Broadcom Corporation Memory architecture with single-port cell and dual-port (read and write) functionality
US6417697B2 (en) 2000-02-02 2002-07-09 Broadcom Corporation Circuit technique for high speed low power data transfer bus
US6937538B2 (en) * 2000-02-02 2005-08-30 Broadcom Corporation Asynchronously resettable decoder for a semiconductor memory
US6492844B2 (en) 2000-02-02 2002-12-10 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US6745354B2 (en) 2000-02-02 2004-06-01 Broadcom Corporation Memory redundancy implementation
US6714467B2 (en) * 2002-03-19 2004-03-30 Broadcom Corporation Block redundancy implementation in heirarchical RAM's
KR100625294B1 (ko) * 2004-10-30 2006-09-18 주식회사 하이닉스반도체 전원 공급 제어 회로 및 전원 공급 회로의 제어 방법
JP4917767B2 (ja) * 2005-07-01 2012-04-18 パナソニック株式会社 半導体記憶装置
KR100700160B1 (ko) * 2005-08-23 2007-03-28 삼성전자주식회사 반도체 메모리 장치 및 반도체 메모리 장치의 워드라인활성화 방법
DE102007007566B4 (de) * 2007-02-15 2012-08-23 Qimonda Ag Halbleiter-Bauelement-System, Speichermodul und Verfahren zum Betreiben eines Halbleiter-Bauelement-Systems
EP2564391A4 (de) * 2010-04-27 2015-09-02 Conversant Intellectual Property Man Inc Phasenwechselspeicher-arrayblöcke mit alternativauswahl
US8526227B2 (en) 2010-06-23 2013-09-03 Mosaid Technologies Incorporated Phase change memory word line driver
US10316152B2 (en) 2014-01-10 2019-06-11 CommScope Connectivity Belgium BVBA Thermoplastic gel compositions and their methods of making

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JPH08172169A (ja) * 1994-12-16 1996-07-02 Toshiba Microelectron Corp 半導体記憶装置
JPH08273363A (ja) * 1995-03-30 1996-10-18 Nec Corp 半導体記憶装置
WO1997027592A1 (en) * 1996-01-24 1997-07-31 Cypress Semiconductor Corporation Interdigitated memory array
DE69619972D1 (de) * 1996-06-18 2002-04-25 St Microelectronics Srl Nichtflüchtige Speicheranordnung mit niedriger Versorgungsspannung und Spannungserhöher
US5872464A (en) * 1996-08-12 1999-02-16 Cypress Semiconductor Corp. Input buffer with stabilized trip points
US5968190A (en) 1996-10-31 1999-10-19 Cypress Semiconductor Corp. Redundancy method and circuit for self-repairing memory arrays
KR100240418B1 (ko) * 1996-12-31 2000-03-02 윤종용 반도체 독출 전용 메모리 및 그의 독출 방법
US5828614A (en) * 1997-04-07 1998-10-27 Cypress Semiconductor Corp. Memory cell sensing method and circuitry for bit line equalization
JPH11195766A (ja) * 1997-10-31 1999-07-21 Mitsubishi Electric Corp 半導体集積回路装置
US6118727A (en) 1998-03-10 2000-09-12 Cypress Semiconductor Corporation Semiconductor memory with interdigitated array having bit line pairs accessible from either of two sides of the array
US6378008B1 (en) 1998-11-25 2002-04-23 Cypress Semiconductor Corporation Output data path scheme in a memory device
US6323701B1 (en) 1998-12-28 2001-11-27 Cypress Semiconductor Corporation Scheme for reducing leakage current in an input buffer
US6163495A (en) * 1999-09-17 2000-12-19 Cypress Semiconductor Corp. Architecture, method(s) and circuitry for low power memories

Also Published As

Publication number Publication date
AU7492100A (en) 2001-04-17
JP5105680B2 (ja) 2012-12-26
DE60035115D1 (de) 2007-07-19
US6163495A (en) 2000-12-19
KR100765157B1 (ko) 2007-10-15
DE60035115T2 (de) 2008-01-31
ATE364228T1 (de) 2007-06-15
EP1214713A4 (de) 2004-12-22
JP2003509802A (ja) 2003-03-11
WO2001020610A1 (en) 2001-03-22
CA2384862A1 (en) 2001-03-22
US6674682B2 (en) 2004-01-06
EP1214713A1 (de) 2002-06-19
KR20020035142A (ko) 2002-05-09
US20020191470A1 (en) 2002-12-19
EP1214713B1 (de) 2007-06-06
US6493283B1 (en) 2002-12-10
IL148680A (en) 2007-12-03

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