IL72337A - Latch-up immune,multiple retrograde well high density cmos fet - Google Patents

Latch-up immune,multiple retrograde well high density cmos fet

Info

Publication number
IL72337A
IL72337A IL72337A IL7233784A IL72337A IL 72337 A IL72337 A IL 72337A IL 72337 A IL72337 A IL 72337A IL 7233784 A IL7233784 A IL 7233784A IL 72337 A IL72337 A IL 72337A
Authority
IL
Israel
Prior art keywords
immune
latch
high density
well high
retrograde well
Prior art date
Application number
IL72337A
Other languages
English (en)
Other versions
IL72337A0 (en
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL72337A0 publication Critical patent/IL72337A0/xx
Publication of IL72337A publication Critical patent/IL72337A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/402—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies
IL72337A 1983-09-12 1984-07-08 Latch-up immune,multiple retrograde well high density cmos fet IL72337A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/531,546 US4633289A (en) 1983-09-12 1983-09-12 Latch-up immune, multiple retrograde well high density CMOS FET

Publications (2)

Publication Number Publication Date
IL72337A0 IL72337A0 (en) 1984-11-30
IL72337A true IL72337A (en) 1988-11-15

Family

ID=24118078

Family Applications (1)

Application Number Title Priority Date Filing Date
IL72337A IL72337A (en) 1983-09-12 1984-07-08 Latch-up immune,multiple retrograde well high density cmos fet

Country Status (7)

Country Link
US (1) US4633289A (de)
EP (1) EP0157779B1 (de)
JP (1) JPH0628298B2 (de)
KR (1) KR930004343B1 (de)
DE (1) DE3376782D1 (de)
IL (1) IL72337A (de)
WO (1) WO1985001391A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123055A (ja) * 1983-12-07 1985-07-01 Fujitsu Ltd 半導体装置及びその製造方法
US5247199A (en) * 1986-01-15 1993-09-21 Harris Corporation Process for forming twin well CMOS integrated circuits
WO1987005443A1 (en) * 1986-03-04 1987-09-11 Motorola, Inc. High/low doping profile for twin well process
US4829359A (en) * 1987-05-29 1989-05-09 Harris Corp. CMOS device having reduced spacing between N and P channel
JP2965783B2 (ja) * 1991-07-17 1999-10-18 三菱電機株式会社 半導体装置およびその製造方法
JPH05198666A (ja) * 1991-11-20 1993-08-06 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2978345B2 (ja) * 1992-11-26 1999-11-15 三菱電機株式会社 半導体装置の製造方法
DE19543922A1 (de) * 1995-11-24 1997-05-28 Siemens Ag Verfahren zum Herabsetzen der Trägerspeicherladung in Halbleiterbauelementen
US5681761A (en) * 1995-12-28 1997-10-28 Philips Electronics North America Corporation Microwave power SOI-MOSFET with high conductivity metal gate
FR2743938B1 (fr) * 1996-01-19 1998-04-10 Sgs Thomson Microelectronics Composant de protection d'interface de lignes telephoniques
JP3958388B2 (ja) 1996-08-26 2007-08-15 株式会社ルネサステクノロジ 半導体装置
KR100260559B1 (ko) 1997-12-29 2000-07-01 윤종용 비휘발성 메모리 장치의 웰 구조 및 그 제조 방법
US6245618B1 (en) 1999-02-03 2001-06-12 Advanced Micro Devices, Inc. Mosfet with localized amorphous region with retrograde implantation
US7411250B2 (en) * 2001-04-05 2008-08-12 Peregrine Semiconductor Corporation Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
US6531739B2 (en) * 2001-04-05 2003-03-11 Peregrine Semiconductor Corporation Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
US8329564B2 (en) * 2007-10-26 2012-12-11 International Business Machines Corporation Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the method
US8298886B2 (en) * 2010-02-08 2012-10-30 Semiconductor Components Industries, Llc Electronic device including doped regions between channel and drain regions and a process of forming the same
US8299560B2 (en) * 2010-02-08 2012-10-30 Semiconductor Components Industries, Llc Electronic device including a buried insulating layer and a vertical conductive structure extending therethrough and a process of forming the same
US8389369B2 (en) * 2010-02-08 2013-03-05 Semiconductor Components Industries, Llc Electronic device including a doped region disposed under and having a higher dopant concentration than a channel region and a process of forming the same
US9659979B2 (en) * 2015-10-15 2017-05-23 International Business Machines Corporation Sensors including complementary lateral bipolar junction transistors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
US4167425A (en) * 1975-09-19 1979-09-11 Siemens Aktiengesellschaft Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment
US4203126A (en) * 1975-11-13 1980-05-13 Siliconix, Inc. CMOS structure and method utilizing retarded electric field for minimum latch-up
DE2627855A1 (de) * 1976-06-22 1977-12-29 Siemens Ag Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung
FR2445617A1 (fr) * 1978-12-28 1980-07-25 Ibm France Resistance a tension de claquage amelioree obtenue par une double implantation ionique dans un substrat semi-conducteur et son procede de fabrication

Also Published As

Publication number Publication date
EP0157779A1 (de) 1985-10-16
EP0157779B1 (de) 1988-05-25
IL72337A0 (en) 1984-11-30
KR930004343B1 (ko) 1993-05-26
JPS60502178A (ja) 1985-12-12
US4633289A (en) 1986-12-30
KR850002688A (ko) 1985-05-15
DE3376782D1 (en) 1988-06-30
WO1985001391A1 (en) 1985-03-28
JPH0628298B2 (ja) 1994-04-13

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