IL76716A0 - Hybrid organometallic compounds,particularly for metal organic chemical vapor deposition - Google Patents

Hybrid organometallic compounds,particularly for metal organic chemical vapor deposition

Info

Publication number: IL76716A0
Authority: IL; Israel
Prior art keywords: metal organic; organic chemical; hybrid; hydride; organometallic compounds
Prior art date: 1984-10-25

Application number

IL76716A

Other languages

English (en)

Original Assignee

Thiokol Morton Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-10-25

Filing date

1985-10-15

Publication date

1986-02-28

1985-10-15 Application filed by Thiokol Morton Inc filed Critical Thiokol Morton Inc

1986-02-28 Publication of IL76716A0 publication Critical patent/IL76716A0/xx

Links

150000002902 organometallic compounds Chemical class 0.000 title abstract 2
238000005229 chemical vapour deposition Methods 0.000 title 1
239000002184 metal Substances 0.000 title 1
150000001875 compounds Chemical class 0.000 abstract 4
238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 3
125000001424 substituent group Chemical group 0.000 abstract 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 2
125000000217 alkyl group Chemical group 0.000 abstract 2
229910052797 bismuth Inorganic materials 0.000 abstract 2
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 2
125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 abstract 2
ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Chemical group C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 abstract 2
150000004678 hydrides Chemical class 0.000 abstract 2
238000000034 method Methods 0.000 abstract 2
230000000737 periodic effect Effects 0.000 abstract 2
125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 2
229910052711 selenium Inorganic materials 0.000 abstract 2
239000011669 selenium Substances 0.000 abstract 2
229910052714 tellurium Inorganic materials 0.000 abstract 2
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
239000004411 aluminium Substances 0.000 abstract 1
229910052782 aluminium Inorganic materials 0.000 abstract 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
229910052790 beryllium Inorganic materials 0.000 abstract 1
ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 1
229910052799 carbon Inorganic materials 0.000 abstract 1
239000002131 composite material Substances 0.000 abstract 1
-1 hydride compound Chemical class 0.000 abstract 1
229910052749 magnesium Inorganic materials 0.000 abstract 1
239000011777 magnesium Substances 0.000 abstract 1
229910052757 nitrogen Inorganic materials 0.000 abstract 1
229910052760 oxygen Inorganic materials 0.000 abstract 1
239000001301 oxygen Substances 0.000 abstract 1
229910052717 sulfur Inorganic materials 0.000 abstract 1
239000011593 sulfur Substances 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C391/00—Compounds containing selenium
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C395/00—Compounds containing tellurium
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/02—Magnesium compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/06—Zinc compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/08—Cadmium compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/10—Mercury compounds
- C07F3/12—Aromatic substances containing mercury
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
- C07F5/027—Organoboranes and organoborohydrides
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/50—Organo-phosphines
- C07F9/505—Preparation; Separation; Purification; Stabilisation
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/66—Arsenic compounds
- C07F9/70—Organo-arsenic compounds
- C07F9/72—Aliphatic compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/90—Antimony compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/94—Bismuth compounds
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
- C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Health & Medical Sciences (AREA)
Biochemistry (AREA)
General Health & Medical Sciences (AREA)
Molecular Biology (AREA)
Life Sciences & Earth Sciences (AREA)
Chemical Vapour Deposition (AREA)
Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

IL76716A 1984-10-25 1985-10-15 Hybrid organometallic compounds,particularly for metal organic chemical vapor deposition IL76716A0 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US06/664,645 US4720560A (en)	1984-10-25	1984-10-25	Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition

Publications (1)

Publication Number	Publication Date
IL76716A0 true IL76716A0 (en)	1986-02-28

Family

ID=24666848

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IL76716A IL76716A0 (en)	1984-10-25	1985-10-15	Hybrid organometallic compounds,particularly for metal organic chemical vapor deposition

Country Status (10)

Country	Link
US (1)	US4720560A (fr)
EP (1)	EP0181706B1 (fr)
JP (1)	JPS61104079A (fr)
KR (1)	KR900001008B1 (fr)
AT (1)	ATE48002T1 (fr)
BR (1)	BR8505338A (fr)
CA (1)	CA1251804A (fr)
DE (1)	DE3574257D1 (fr)
DK (1)	DK488785A (fr)
IL (1)	IL76716A0 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3514410A1 (de) *	1985-04-20	1986-10-23	Schering AG, Berlin und Bergkamen, 1000 Berlin	Neue alkalimetallaluminiumdialkyldihydride und deren loesungen in aromatischen kohlenwasserstoffen
JPH0627327B2 (ja) *	1987-06-30	1994-04-13	インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン	Ｉｂ族金属の付着方法
EP0305144A3 (fr) *	1987-08-24	1989-03-08	Canon Kabushiki Kaisha	Méthode pour former un film semi-conducteur cristallin composé
DE3742525C2 (de) *	1987-12-11	1998-02-19	Hertz Inst Heinrich	Verfahren zur Herstellung von Metallalkylverbindungen und deren Verwendung
US4915988A (en) *	1988-06-22	1990-04-10	Georgia Tech Research Corporation	Chemical vapor deposition of group IIA metals and precursors therefor
US4992305A (en) *	1988-06-22	1991-02-12	Georgia Tech Research Corporation	Chemical vapor deposition of transistion metals
US4942252A (en) *	1988-08-16	1990-07-17	Cvd Incorporated	Synthesis of phosphorus and arsenic, halides and hydrides
NL8802458A (nl) *	1988-10-07	1990-05-01	Philips Nv	Werkwijze voor de vervaardiging van een epitaxiale indiumfosfide-laag op een substraatoppervlak.
US5147688A (en) *	1990-04-24	1992-09-15	Cvd, Inc.	MOCVD of indium oxide and indium/tin oxide films on substrates
DE4104076C2 (de) *	1991-02-11	1994-03-31	Bruker Analytische Messtechnik	Vorrichtung zur kernresonanzspektrometrischen Messung von chemischen und/oder physikalischen Reaktionsabläufen
US5300185A (en) *	1991-03-29	1994-04-05	Kabushiki Kaisha Toshiba	Method of manufacturing III-V group compound semiconductor
DE4214224A1 (de) *	1992-04-30	1993-11-04	Merck Patent Gmbh	Verwendung von elementorganischen verbindungen zur abscheidung des elementes auf substraten
US5380895A (en) *	1993-02-10	1995-01-10	Bandgap Technology Corporation	Method for the synthesis of metal alkyls and metal aryls
US5502227A (en) *	1993-07-27	1996-03-26	Cvd, Incorporated	Liquid indium source
JPH07153700A (ja) *	1993-11-26	1995-06-16	Sony Corp	有機金属気相成長法及び発光素子作製方法
US6211106B1 (en) *	1998-06-18	2001-04-03	Industrial Technology Research Institute	Groups IIA and IIIA based catalyst composition for preparing high-syndiotacticity polystyrene
EP1335415B1 (fr) *	2002-01-17	2005-08-03	Shipley Co. L.L.C.	Composés organiques d'indium pour depôt chimique en phase vapeur
DE102005037076B3 (de) *	2005-08-03	2007-01-25	Otto-Von-Guericke-Universität Magdeburg	Verfahren zur Herstellung von gemischt substituierte Organobismuthverbindungen und deren Verwendung
US20070141374A1 (en) *	2005-12-19	2007-06-21	General Electric Company	Environmentally resistant disk
WO2014078263A1 (fr) *	2012-11-14	2014-05-22	Dow Global Technologies Llc	Procédés de production de triméthylgallium
CN105473599B (zh) *	2013-08-22	2018-08-28	优美科股份公司及两合公司	用于生产烷基铟化合物的方法及其用途
EP3173507A1 (fr) *	2015-11-25	2017-05-31	Umicore AG & Co. KG	Procede de depot chimique en phase vapeur organometallique a l'aide de solutions de composes d'indium(alkyl) dans des hydrocarbures
WO2022118744A1 (fr) *	2020-12-04	2022-06-09	株式会社高純度化学研究所	Matière première de dépôt en phase vapeur destinée à être utilisée dans la production d'un film contenant de l'indium et au moins un autre métal, et procédé de production d'un film contenant de l'indium et au moins un autre métal

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2266776A (en) *	1938-09-24	1941-12-23	Atlantic Refining Co	Diesel fuel
US2818416A (en) *	1952-12-10	1957-12-31	Ethyl Corp	Cyclomatic compounds
US2880115A (en) *	1955-07-13	1959-03-31	Ohio Commw Eng Co	Method of gas plating light metals
US3097066A (en) *	1956-02-25	1963-07-09	Studiengesellschaft Kohle Mbh	Process for the production of boron and aluminium compounds containing hydrocarbon raicals and/or hydrogen
US2987534A (en) *	1958-04-25	1961-06-06	Ethyl Corp	Group iii-a element compounds
US3026356A (en) *	1958-04-25	1962-03-20	Herbert C Brown	Process for the preparation of organo boron compounds
US2969382A (en) *	1958-04-25	1961-01-24	Ethyl Corp	Process for the manufacture of cyclopentadienyl group iii-a metal compounds
US3247261A (en) *	1958-12-24	1966-04-19	Dal Mon Research Co	Organo-metallo compounds
US3161686A (en) *	1960-03-30	1964-12-15	Herbert C Brown	Novel organoboron compounds
JPS466817Y1 (fr) *	1967-06-30	1971-03-10
US3755479A (en) *	1967-10-24	1973-08-28	Ethyl Corp	Beryllium hydride compositions and their use in making cyclopentadienyl beryllium hydride compounds
US3578494A (en) *	1969-04-09	1971-05-11	Continental Oil Co	Zinc plating by chemical reduction
US3755478A (en) *	1971-08-18	1973-08-28	Lithium Corp	Cyclic process for the preparation of diorganomagnesium compounds
JPS5312359B2 (fr) *	1972-06-14	1978-04-28
JPS5422276B2 (fr) *	1973-03-19	1979-08-06
DE2429600A1 (de) *	1973-06-22	1975-01-16	Gen Electric	In luft stabile, magnetische materialien und verfahren zu deren herstellung
EP0040939B1 (fr) *	1980-05-27	1985-01-02	The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and	Fabrication de tellurure de cadmium et mercure
JPS57145972A (en) *	1980-11-18	1982-09-09	British Telecomm	Formation of group iii-v compount
US4447369A (en) *	1982-04-16	1984-05-08	Ethyl Corporation	Organomagnesium compounds

1984
- 1984-10-25 US US06/664,645 patent/US4720560A/en not_active Expired - Lifetime
1985
- 1985-10-15 DE DE8585307400T patent/DE3574257D1/de not_active Expired
- 1985-10-15 AT AT85307400T patent/ATE48002T1/de not_active IP Right Cessation
- 1985-10-15 IL IL76716A patent/IL76716A0/xx unknown
- 1985-10-15 EP EP85307400A patent/EP0181706B1/fr not_active Expired
- 1985-10-21 CA CA000493480A patent/CA1251804A/fr not_active Expired
- 1985-10-24 DK DK488785A patent/DK488785A/da not_active Application Discontinuation
- 1985-10-24 KR KR1019850007847A patent/KR900001008B1/ko not_active Expired
- 1985-10-25 BR BR8505338A patent/BR8505338A/pt unknown
- 1985-10-25 JP JP60239257A patent/JPS61104079A/ja active Granted

Also Published As

Publication number	Publication date
KR860003266A (ko)	1986-05-21
ATE48002T1 (de)	1989-12-15
EP0181706B1 (fr)	1989-11-15
CA1251804A (fr)	1989-03-28
DK488785A (da)	1986-04-26
JPS61104079A (ja)	1986-05-22
US4720560A (en)	1988-01-19
DK488785D0 (da)	1985-10-24
DE3574257D1 (en)	1989-12-21
EP0181706A1 (fr)	1986-05-21
BR8505338A (pt)	1986-08-05
KR900001008B1 (ko)	1990-02-24
JPH0357188B2 (fr)	1991-08-30

Publication	Publication Date	Title
DE3574257D1 (en)	1989-12-21	Hybrid organometallic compounds of in and ba and process for metal organic chemical vapour deposition
EP0155780A3 (en)	1985-12-04	Infra-red absorber
FI873402A0 (fi)	1987-08-05	Aromatisk metylenbindningar av en aromatisk olja innehaollande metylenbindningar.
HUT47099A (en)	1989-01-30	Process for producing pyridine derivatives and pharmaceutical compositions comprising such compounds
WO1987007899A1 (fr)	1987-12-30	Procede pour produire des polyolefines stereospecifiques
KR920019671A (ko)	1992-11-19	휘발성 알칼리 토금속 착물 및 이의 용도
CA2268286A1 (fr)	1998-04-30	Composition de graisse a base d'uree
EP0598910A4 (fr)	1994-02-07	Procede de production de derive de nucleosides.
ATE35992T1 (de)	1988-08-15	Tris(beta,beta-dimethylphenethyl)zinnverbindungen.
CA2044696A1 (fr)	1991-12-29	Methode de preparation de composes organosilicies
CA2042745A1 (fr)	1991-11-19	Nouvelles compositions durcissables
AU623986B2 (en)	1992-05-28	Platinum complexes and antitumor agents containing them as an active ingredient
GB1413764A (en)	1975-11-12	Halogenated aralkyl ethers
Hui et al.	1986	Hybrid Organometallic Compounds and Process for Metal Organic Chemical Vapour Deposition
JPS57206690A (en)	1982-12-18	Transition metal complex compound and manufacture
GR3034291T3 (en)	2000-12-29	Catalyst with improved activity for ethylene (co)-polymerization
HUT61967A (en)	1993-03-29	Process for producing new alkyl aminoalkyl amine- and -ether derivatives and pharmaceutical compositions comprising such compounds
BR9205586A (pt)	1994-09-27	Composições de óleo lubrificante e graxa.
GB1093186A (en)	1967-11-29	Dibenzothiadiazepine 5,5-dioxide derivatives
DE68921648D1 (de)	1995-04-20	Supraleiter und Verfahren zu deren Herstellung.
AU1895483A (en)	1984-03-22	Mg/zn diketonate complexes adducted with thf
GB2301361A (en)	1996-12-04	High temperature epoxy resins
TW368503B (en)	1999-09-01	Process for preparing carbapenem and penem compounds and new compounds involved in that process
FR2438049A1 (fr)	1980-04-30	Procede de preparation de penicillines par voie semi-synthetique
JPS5538883A (en)	1980-03-18	Catalyst on solid carrier for alphaaolefin polymerization