IL87580A0 - Method for production of high purity aluminum nitrides - Google Patents
Method for production of high purity aluminum nitridesInfo
- Publication number
- IL87580A0 IL87580A0 IL87580A IL8758088A IL87580A0 IL 87580 A0 IL87580 A0 IL 87580A0 IL 87580 A IL87580 A IL 87580A IL 8758088 A IL8758088 A IL 8758088A IL 87580 A0 IL87580 A0 IL 87580A0
- Authority
- IL
- Israel
- Prior art keywords
- production
- high purity
- purity aluminum
- aluminum nitrides
- nitrides
- Prior art date
Links
- 229910052782 aluminium Inorganic materials 0.000 title 1
- -1 aluminum nitrides Chemical class 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/092,329 US4767607A (en) | 1987-09-02 | 1987-09-02 | Method for production of high purity aluminum nitrides |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL87580A0 true IL87580A0 (en) | 1989-01-31 |
Family
ID=22232714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL87580A IL87580A0 (en) | 1987-09-02 | 1988-08-28 | Method for production of high purity aluminum nitrides |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4767607A (fr) |
| KR (1) | KR890701467A (fr) |
| AU (1) | AU2522288A (fr) |
| CA (1) | CA1301430C (fr) |
| IL (1) | IL87580A0 (fr) |
| WO (1) | WO1989001911A1 (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5260397A (en) * | 1990-10-09 | 1993-11-09 | Jensen James A | Thermoset polymeric precursor for aluminum nitride |
| CA2045002A1 (fr) * | 1990-10-09 | 1992-04-10 | James A. Jensen | Precurseurs polymeriques pour nitrure d'aluminium |
| US5457173A (en) * | 1990-10-09 | 1995-10-10 | Lanxide Technology Company, Lp | Polymer precursors for aluminum nitride |
| US5340896A (en) * | 1990-10-09 | 1994-08-23 | Jensen James A | Thermoset polymeric precursors for aluminum nitride |
| US5075265A (en) * | 1990-12-10 | 1991-12-24 | Ford Motor Company | Preparation of aluminum oxynitride from organosiloxydihaloalanes |
| US5455322A (en) * | 1992-06-12 | 1995-10-03 | Lanxide Technology Company, Lp | Aluminum nitride from inorganic polymers |
| DE4241287A1 (de) * | 1992-12-08 | 1994-06-09 | Bayer Ag | Siliciumaluminiumnitridkeramik und Vorläuferverbindungen, Verfahren zu ihrer Herstellung sowie deren Verwendung |
| US5939151A (en) * | 1996-10-25 | 1999-08-17 | Iowa State University Research Foundation, Inc. | Method and apparatus for reactive plasma atomization |
| JP4729180B2 (ja) * | 2001-02-02 | 2011-07-20 | 株式会社茨木研究所 | 窒化アルミニウムの製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6028781B2 (ja) * | 1977-08-03 | 1985-07-06 | 財団法人特殊無機材料研究所 | 耐熱性セラミツクス焼結成形体の製造方法 |
| JPS5839764B2 (ja) * | 1978-03-10 | 1983-09-01 | 株式会社東芝 | 窒化アルミニウム質粉末の製造方法 |
| JPS6191008A (ja) * | 1984-10-11 | 1986-05-09 | Nec Corp | 窒化アルミニウム粉末の合成方法 |
| JPS61151006A (ja) * | 1984-12-24 | 1986-07-09 | Toshiba Corp | 窒化アルミニウム質粉末の製造方法 |
| US4687657A (en) * | 1986-06-09 | 1987-08-18 | Celanese Corporation | Fabrication of SiC - AlN alloys |
-
1987
- 1987-09-02 US US07/092,329 patent/US4767607A/en not_active Expired - Fee Related
-
1988
- 1988-08-23 CA CA000575399A patent/CA1301430C/fr not_active Expired - Lifetime
- 1988-08-28 IL IL87580A patent/IL87580A0/xx unknown
- 1988-09-01 KR KR1019890700782A patent/KR890701467A/ko not_active Withdrawn
- 1988-09-01 WO PCT/US1988/002942 patent/WO1989001911A1/fr not_active Ceased
- 1988-09-01 AU AU25222/88A patent/AU2522288A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| AU2522288A (en) | 1989-03-31 |
| US4767607A (en) | 1988-08-30 |
| WO1989001911A1 (fr) | 1989-03-09 |
| CA1301430C (fr) | 1992-05-26 |
| KR890701467A (ko) | 1989-12-20 |
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