IL99998A0 - Chemical vapor deposition of diamond by alternating chemical reactions - Google Patents

Chemical vapor deposition of diamond by alternating chemical reactions

Info

Publication number
IL99998A0
IL99998A0 IL99998A IL9999891A IL99998A0 IL 99998 A0 IL99998 A0 IL 99998A0 IL 99998 A IL99998 A IL 99998A IL 9999891 A IL9999891 A IL 9999891A IL 99998 A0 IL99998 A0 IL 99998A0
Authority
IL
Israel
Prior art keywords
diamond
vapor deposition
bond
gas
alternating
Prior art date
Application number
IL99998A
Other languages
English (en)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IL99998A0 publication Critical patent/IL99998A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
IL99998A 1990-11-26 1991-11-07 Chemical vapor deposition of diamond by alternating chemical reactions IL99998A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61814990A 1990-11-26 1990-11-26

Publications (1)

Publication Number Publication Date
IL99998A0 true IL99998A0 (en) 1992-08-18

Family

ID=24476514

Family Applications (1)

Application Number Title Priority Date Filing Date
IL99998A IL99998A0 (en) 1990-11-26 1991-11-07 Chemical vapor deposition of diamond by alternating chemical reactions

Country Status (12)

Country Link
US (1) US5302231A (de)
EP (1) EP0487897B1 (de)
JP (1) JPH04300288A (de)
KR (1) KR920010034A (de)
AT (1) ATE133720T1 (de)
AU (1) AU644495B2 (de)
BR (1) BR9105107A (de)
CA (1) CA2049673A1 (de)
DE (1) DE69116817T2 (de)
IE (1) IE914088A1 (de)
IL (1) IL99998A0 (de)
ZA (1) ZA918941B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
US5620754A (en) 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
US5554415A (en) 1994-01-18 1996-09-10 Qqc, Inc. Substrate coating techniques, including fabricating materials on a surface of a substrate
US5731046A (en) 1994-01-18 1998-03-24 Qqc, Inc. Fabrication of diamond and diamond-like carbon coatings
US5897924A (en) * 1995-06-26 1999-04-27 Board Of Trustees Operating Michigan State University Process for depositing adherent diamond thin films
EP1290251B8 (de) * 2000-06-15 2006-02-01 Element Six (PTY) Ltd Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht
ES2571219T3 (es) * 2001-01-25 2024-09-23 The United States Of America Represented By The Sec Dep Of Health And Human Services Formulación de compuestos de ácido borónico
US7687146B1 (en) 2004-02-11 2010-03-30 Zyvex Labs, Llc Simple tool for positional diamond mechanosynthesis, and its method of manufacture
US9469918B2 (en) 2014-01-24 2016-10-18 Ii-Vi Incorporated Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon
DE102014108352A1 (de) * 2014-06-13 2015-12-17 Forschungszentrum Jülich GmbH Verfahren zum Abscheiden einer Kristallschicht bei niedrigen Temperaturen, insbesondere einer photolumineszierenden IV-IV-Schicht auf einem IV-Substrat, sowie ein eine derartige Schicht aufweisendes optoelektronisches Bauelement
DE102018131022A1 (de) * 2018-12-05 2020-06-10 Schaeffler Technologies AG & Co. KG Gleitlager und Verfahren zur Herstellung eines Lagerelementes für ein Gleitlager

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030188A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
JPS60180999A (ja) * 1984-02-24 1985-09-14 Nec Corp ダイヤモンドの合成方法
JPS63210099A (ja) * 1987-02-26 1988-08-31 Nissin Electric Co Ltd ダイヤモンド膜の作製方法
US4882138A (en) * 1987-03-30 1989-11-21 Crystallume Method for preparation of diamond ceramics
EP0286306B1 (de) * 1987-04-03 1993-10-06 Fujitsu Limited Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant
ZA888034B (en) * 1987-12-17 1989-06-28 Gen Electric Diamond growth process
GB8810113D0 (en) * 1988-04-28 1988-06-02 Jones B L Bonded composite
JP2814257B2 (ja) * 1989-02-10 1998-10-22 九州日立マクセル株式会社 電気かみそり
US4981818A (en) * 1990-02-13 1991-01-01 General Electric Company Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors
US5071677A (en) * 1990-05-24 1991-12-10 Houston Advanced Research Center Halogen-assisted chemical vapor deposition of diamond

Also Published As

Publication number Publication date
EP0487897B1 (de) 1996-01-31
EP0487897A1 (de) 1992-06-03
ATE133720T1 (de) 1996-02-15
US5302231A (en) 1994-04-12
KR920010034A (ko) 1992-06-26
AU8796291A (en) 1992-05-28
JPH04300288A (ja) 1992-10-23
DE69116817T2 (de) 1996-08-01
IE914088A1 (en) 1992-06-03
BR9105107A (pt) 1992-07-21
AU644495B2 (en) 1993-12-09
CA2049673A1 (en) 1992-05-27
ZA918941B (en) 1992-11-25
DE69116817D1 (de) 1996-03-14

Similar Documents

Publication Publication Date Title
IL99998A0 (en) Chemical vapor deposition of diamond by alternating chemical reactions
ATE236721T1 (de) Silberkatalysator, verfahren zu dessen herstellung und verfahren zur herstellung von ethylenoxid
ZA897579B (en) Process for the synthesis of polymers based on boron and nitrogen
GB1488947A (en) Process for producing diffusion layers of carbides nitrides and/or carbonitrides
DE69307699D1 (de) Verfahren zur herstellung substituierter aromatischer amine
ATE181968T1 (de) Verfahren zur herstellung von siliziumkarbid- filmen unter verwendung von einzelnen siliziumorganischen verbindungen
DE3662398D1 (en) Process for preparing triacetoxysilanes form tris(amino)silanes
ATE42091T1 (de) N-(6-methoxy-5(perfluoralkyl)-1-naphthoyl)-nmethylglycine und ihre thionaphthoylanaloga.
ATE58745T1 (de) Verfahren zur herstellung von siliciumcarbid.
IL78341A0 (en) Method of preparing 2,3,6-trichloropyridine and 2,3,5,6-tetrachloropyridine in the gas phase
ATE134070T1 (de) Verfahren zum herstellen einer abgeschiedenen schicht und verfahren zum herstellen einer halbleitervorrichtung
ATE67530T1 (de) Metallorganisches gasphasen-epitaxiewachstum von ii-vi-halbleitermaterialien.
JPS5646888A (en) Preparation of alkenylhalosilane
DE59001847D1 (de) Verfahren zur herstellung von siliciumdiimid mit geringem kohlenstoffgehalt.
JPS5686184A (en) Novel mitomycin c derivative
ATE92481T1 (de) Verfahren zur herstellung von n,n'-bis-(2hydroxyethyl)-piperazin.
JPS56109898A (en) Gaseous phase growing method for magnespinel
ATE79124T1 (de) Verfahren zur herstellung von waermestandfesten polyurethanharnstoff-elastomeren.
SE8701197L (sv) Metod foer selektiv avkolning av jaernbaserade material
JPS53142388A (en) Gas phase growth method for epitaxial layer
KR930007958A (ko) 아릴할로실란의 열 불균등화 반응방법
KR930700360A (ko) 결정성 분자체(molecular sieve) 조성물